Quantitative prediction of semiconductor laser characteristics based on low intensity photoluminescence measurements

Hader, J.; Zakharian, Aramais R.; Moloney, Jerome V.; Nelson, Thomas C.; Siskaninetz, William J.; Ehret, J. E.; Hantke, K.; Hofmann, Martin R.; Koch, S. W.

doi:10.1109/lpt.2002.1003085

Cited by 20 publications

(9 citation statements)

References 8 publications

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“…The first validation of the connection between low carrier density PL and high density inverted semiconductor gain was made possible via a collaboration between a semiconductor growth team at AFRL, the University of Arizona ACMS research group and an experimental group at the University of Bochum in Germany in 2002 [14]. The sequence of steps involved in this validation procedure provide the first demonstration of a closed-loop wafer level diagnostic coupled to gain measurement on the processed sample.…”

Section: Wafer-level Diagnostics: From Photoluminescence To Gainmentioning

confidence: 99%

Quantum design of semiconductor active materials: laser and amplifier applications

Moloney

Hader

Koch³

2007

Laser & Photonics Reviews

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Abstract:We present an overview of a novel first-principles quantum approach to designing and optimizing semiconductor quantum-well material systems for target wavelengths. Using these microscopic inputs as basic building blocks we predict the light-current (LI) characteristic for a low power InGaPAs ridge laser without having to use adjustable fit parameters. Finally we employ these microscopic inputs to develop sophisticated simulation capabilities for designing and optimizing end packaged high power laser structures. As an explicit example of the latter, we consider the design of a vertical external cavity semiconductor laser (VECSEL).Experimental (circles and squares) and theoretical (solid lines) photoluminescence (green/blue) and modal gain (black/red) for a 5-nm wide InGaAs quantum well sandwiched between GaAs barriers

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Section: Wafer-level Diagnostics: From Photoluminescence To Gainmentioning

confidence: 99%

Quantum design of semiconductor active materials: laser and amplifier applications

Moloney

Hader

Koch³

2007

Laser & Photonics Reviews

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“…The predictive capabilities of this method in determining the material gain spectra for a variety of materials has been proven in several publications. 6,8,10 The microscopic calculation of gain / absorption, refractive index and photo-luminescence spectra is described in detail in Refs. 6,12 and Refs.…”

Section: Theorymentioning

confidence: 99%

Integration of microscopic gain modeling into a commercial laser simulation environment

Grote¹,

Heller²,

Scarmozzino³

et al. 2003

SPIE Proceedings

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We demonstrate the integration of microscopic gain modeling into the laser design tool LaserMOD, which is derived from the Minilase II simulator. 1 A microscopic many body theory of the semiconductor allows for the accurate modeling of the spectral characteristics of the material gain. With such a model, the energetic position of the gain peak, the broadening due to collisions, and therefore, the absolute magnitude of the gain can be predicted based solely on material parameters. In contrast, many simpler approaches rely on careful calibration of model parameters requiring additional effort and experimental studies. In our full scale laser simulation multi dimensional carrier transport, interaction with the optical field via stimulated and spontaneous emission, as well as the optical field itself is computed self consistently. We demonstrate our approach on an example of a Fabry-Perot laser structure with GaInAsP multiple quantum wells for 1.55 µm emission wavelength.

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“…In contrast, the many-body theory microscopically accounts for the effects of carrier-carrier interaction, including excitonic correlations as well as carrier-phonon scattering. The predictive capabilities of this method in determining the material gain spectra for a variety of materials has been proven in several publications [25,27,29].…”

Section: Gainmentioning

confidence: 98%

“…A methodology has been described that makes it possible to use this procedure for on-wafer testing [28,29]. Static disorder in the quantum wells leads to an inhomogeneous broadening of optical resonances due to local fluctuations of the confinement potential.…”

Section: Sample Characterizationmentioning

confidence: 99%

“…This allows for the determination of the inhomogeneous broadening, as well as possible deviations between nominal and actual structural parameters, which are all independent of carrier density and temperature. This method has recently received attention for application as an on-wafer testing tool [28,29]. Once the amount of disorder has been characterized, the theory is completely parameter free and can predict the optical properties for the device under high excitation operating conditions.…”

Section: Introductionmentioning

confidence: 99%

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Fabry-Perot Lasers: Temperature and Many-Body Effects

Grote¹,

Heller²,

Scarmozzino³

et al.

Optoelectronic Devices

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In this chapter, we demonstrate the integration of microscopic gain modeling into the laser design tool LaserMOD, which is derived from the Minilase II simulator developed at the University of Illinois [1]. Multidimensional carrier transport, interaction with the optical field via stimulated and spontaneous emission, as well as the optical field are computed self-consistently in our fullscale laser simulations. Giving additional details with respect to our previous work [2], we demonstrate the effectiveness of this approach by investigating the temperature sensitivity of a broad-ridge Fabry-Perot laser structure with InGaAsP multi-quantum wells for 1.55 µm emission wavelength.Monochromatic light sources are key components in optical telecommunication systems. Predominantly, this need has been filled by semiconductor lasers due to their narrow linewidth. However, increasingly stringent requirements for bandwidth, tunability, power dissipation, temperature stability, and noise are being placed on these devices to meet network demands for higher capacity and lower bit error rates. As in the semiconductor industry, where electronic design automation assists in designing multimillion-gate integrated circuits, it is becoming common practice to employ simulation tools for designing and optimizing telecommunication networks and components. As a consequence of predictive modeling, the time to market as well as development cost of telecommunication infrastructure can be reduced, as fewer cycles between design and experimental verification are necessary. Different levels of model abstraction are used to describe the behavior of devices, depending on whether they are being simulated alone or with other components in an optical system. At the lowest level, simulations treat the fundamental device physics rigorously, whereas behavioral modeling, which allows for an increased number of elements to be treated, is applied at the system or network level. This chapter will focus on the former approach.To predict the performance of a new design, a successful commercial laser simulator must account for the many complex physical processes that con-

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Quantitative prediction of semiconductor laser characteristics based on low intensity photoluminescence measurements

Cited by 20 publications

References 8 publications

Quantum design of semiconductor active materials: laser and amplifier applications

Quantum design of semiconductor active materials: laser and amplifier applications

Integration of microscopic gain modeling into a commercial laser simulation environment

Fabry-Perot Lasers: Temperature and Many-Body Effects

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