Quantitative prediction of junction leakage in bulk-technology CMOS devices

The curious case of thin-body Ge crystallization

“…For metal-oxide-semiconductor (MOS) device scaling, a traditional architecture, with planar bulk substrates and highly doped channels for short-channel-effect (SCE) control, is problematic due to excessive leakage currents. 7 To overcome this, thin-body architectures are being considered which operate in partially depleted, fully depleted, or accumulation mode. 8 Due to the narrow bandgap of Ge leading to worse diode leakage than in Si, 9 it is realistic to assume that if Ge is to be used in future MOS technologies, it will be in the thin-body form.…”

Characterization of a junctionless diode

“…As leakage current due to band to band tunneling (BBT) and trap-assisted tunneling has strong lateral voltage dependence and activation energy (E A ) close to 0 eV for BBT, which has not been observed in our measurements. 14 We consider two components of the off-state leakage current of JL diodes: current due to thermal generation in the depleted body film (I gen,dep ) and current due to diffusion at the edge of neutral body just outside the channel-drain junction (I diff ) (Ref. 15):…”

Mind the drain from strain: Effects of strain on the leakage current of Si diodes

“…The diodes used in this study were previously fabricated [3,4] with different doping concentrations in the substrate in order to isolate different leakage mechanisms, including BBT, SRH and TAT. This enabled a closer evaluation of these reverse leakage mechanisms.…”