Quantitative monitoring of InAs quantum dot growth using X-ray diffraction

Takahasi, Masamitu

doi:10.1016/j.jcrysgro.2013.11.012

Cited by 3 publications

(4 citation statements)

References 25 publications

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“…Additionally, Sasaki et al identified dominant growth in nanowires or two-dimensional layers by changing intensities of specific Bragg peaks [128] . They used in situ XRD to analyze the effect of In supply on the kinetics of Au-catalyzed InGaAs nanowire growth.…”

Section: X-ray Diffraction (Xrd)mentioning

confidence: 99%

Development of in situ characterization techniques in molecular beam epitaxy

Shen,

Zhan,

et al. 2024

J. Semicond.

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Ex situ characterization techniques in molecular beam epitaxy (MBE) have inherent limitations, such as being prone to sample contamination and unstable surfaces during sample transfer from the MBE chamber. In recent years, the need for improved accuracy and reliability in measurement has driven the increasing adoption of in situ characterization techniques. These techniques, such as reflection high-energy electron diffraction, scanning tunneling microscopy, and X-ray photoelectron spectroscopy, allow direct observation of film growth processes in real time without exposing the sample to air, hence offering insights into the growth mechanisms of epitaxial films with controlled properties. By combining multiple in situ characterization techniques with MBE, researchers can better understand film growth processes, realizing novel materials with customized properties and extensive applications. This review aims to overview the benefits and achievements of in situ characterization techniques in MBE and their applications for material science research. In addition, through further analysis of these techniques regarding their challenges and potential solutions, particularly highlighting the assistance of machine learning to correlate in situ characterization with other material information, we hope to provide a guideline for future efforts in the development of novel monitoring and control schemes for MBE growth processes with improved material properties.

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Section: X-ray Diffraction (Xrd)mentioning

confidence: 99%

Development of in situ characterization techniques in molecular beam epitaxy

Shen,

Zhan,

et al. 2024

J. Semicond.

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“…4, the XRD intensity around the 220 Bragg point was measured in the grazing incidence geometry. 62) The incident X-rays impinging on the sample surface at a glancing angle of 0.2°are diffracted by (220) planes that are perpendicular to the substrate surface and result in 220 diffraction at a glancing angle. The X-ray wavelength was 0.124 nm.…”

Section: Qd Growthmentioning

confidence: 99%

“…[54][55][56][57][58][59][60][61][62] One of the advantages of XRD as an in situ tool is its wide application range as a consequence of the weak interaction of X-rays with matter. Crystal growth takes place at the surface of a crystal in contact with a mother phase.…”

Section: Introductionmentioning

confidence: 99%

“…38) The development of two-dimensional (2D) X-ray detectors has facilitated the in situ XRD studies of strain relaxation during heteroepitaxy, [39][40][41][42][43][44][45][46][47] NW growth, [48][49][50][51][52][53] and QD growth. [54][55][56][57][58][59][60][61][62] One of the advantages of XRD as an in situ tool is its wide application range as a consequence of the weak interaction of X-rays with matter. Crystal growth takes place at the surface of a crystal in contact with a mother phase.…”

Section: Introductionmentioning

confidence: 99%

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In situ synchrotron X-ray diffraction study on epitaxial-growth dynamics of III–V semiconductors

Takahasi

2018

Jpn. J. Appl. Phys.

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The application of in situ synchrotron X-ray diffraction (XRD) to the molecular-beam epitaxial (MBE) growth of III-V semiconductors is overviewed along with backgrounds of the diffraction theory and instrumentation. X-rays are sensitive not only to the surface of growing films but also to buried interfacial structures because of their large penetration depth. Moreover, a spatial coherence length up to µm order makes X-rays widely applicable to the characterization of low-dimensional structures, such as quantum dots and wires. In situ XRD studies during growth were performed using an X-ray diffractometer, which was combined with an MBE chamber. X-ray reciprocal space mapping at a speed matching a typical growth rate was achieved using intense X-rays available from a synchrotron light source and an area detector. The importance of measuring the three-dimensional distribution of XRD intensity in a reciprocal space map is demonstrated for the MBE growth of two-, one-, and zero-dimensional structures. A large amount of information about the growth process of two-dimensional InGaAs/GaAs(001) epitaxial films has been provided by three-dimensional X-ray reciprocal mappings, including the anisotropic strain relaxation, the compositional inhomogeneity, and the evolution of surface and interfacial roughness. For one-dimensional GaAs nanowires grown in a Au-catalyzed vapor-liquid-solid mode, the relationship between the diameter of the nanowires and the formation of polytypes has been suggested on the basis of in situ XRD measurements. In situ three-dimensional X-ray reciprocal space mapping is also shown to be useful for determining the lateral and vertical sizes of self-assembled InAs/GaAs(001) quantum dots as well as their internal strain distributions during growth.

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Direct observation of strain in InAs quantum dots and cap layer during molecular beam epitaxial growth using in situ X-ray diffraction

Shimomura

Suzuki

Sasaki

et al. 2015

Journal of Applied Physics

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Direct measurements on the growth of InAs quantum dots (QDs) and various cap layers during molecular beam epitaxy are performed by in situ X-ray diffraction (XRD). The evolution of strain induced both in the QDs and cap layers during capping is discussed based on the XRD intensity transients obtained at various lattice constants. Transients with different features are observed from those obtained during InGaAs and GaAs capping. The difference observed is attributed to In-Ga intermixing between the QDs and the cap layer under limited supply of In. Photoluminescence (PL) wavelength can be tuned by controlling the intermixing, which affects both the strain induced in the QDs and the barrier heights. The PL wavelength also varies with the cap layer thickness. A large redshift occurs by reducing the cap thickness. The in situ XRD observation reveals that this is a result of reduced strain. We demonstrate how such information about strain can be applied for designing and preparing novel device structures.

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Quantitative monitoring of InAs quantum dot growth using X-ray diffraction

Cited by 3 publications

References 25 publications

Development of in situ characterization techniques in molecular beam epitaxy

Development of in situ characterization techniques in molecular beam epitaxy

In situ synchrotron X-ray diffraction study on epitaxial-growth dynamics of III–V semiconductors

Direct observation of strain in InAs quantum dots and cap layer during molecular beam epitaxial growth using in situ X-ray diffraction

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