Quantitative growth-investigation of zincblende ZnMgSe/GaAs(0 0 1) and ZnSe/GaAs(0 0 1) by means of RHEED, HRXRD and thickness monitoring

Frey, Thomas; Reisinger, T.; Folger, Bernhard; Kastner, M.; Gebhardt, W.

doi:10.1016/s0022-0248(98)80288-1

Cited by 2 publications

(7 citation statements)

References 15 publications

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“…Frey's results 6 showed that the sticking coefficients for both Zn and Se were around 0.6. 6,31 When the Zn flux was kept constant and the Se flux was varied, the growth rate increases with increasing Se flux to an upper limit. Actually, exact sticking coefficients depend on both Se and Zn fluxes.…”

Section: A Growthmentioning

confidence: 98%

“…[4][5][6][7][8] Zhu presented a theoretical model of ZnSe growth. [4][5][6][7][8] Zhu presented a theoretical model of ZnSe growth.…”

Section: A Growthmentioning

confidence: 99%

“…[4][5][6][7][8] Zhu presented a theoretical model of ZnSe growth. Frey's results 6 showed that the sticking coefficients for both Zn and Se were around 0.6. The crucial parameter relating growth rate and particle flux is the sticking coefficient.…”

Section: A Growthmentioning

confidence: 99%

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Photoemission studies of ZnSe epilayers grown on GaAs(111)B surface

Feng

Leckey

Riley

et al. 2001

Journal of Applied Physics

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Surface electronic structure in transition-metal (Cr and Mn) doped GaAs (001) studied by in situ photoemission spectroscopy Appl.Growth mode and defect generation in ZnSe heteroepitaxy on Te-terminated GaAs (001) surfaces J. Vac. Sci. Technol. B 15, 1254 (1997); 10.1116/1.589446 Structural properties of ZnSe layers grown on (001) GaAs substrates tilted toward [110] and [010] J.The growth and characterization of ZnSe epilayers on GaAs͑111͒B was studied. Insight into the formation mechanism of this type of surface, interface, and bulk has been provided by photoemission spectroscopy. When Zn and Se are deposited, Se reacts with As to form Se-As bonds. Therefore, the electron mean free path obtained from the intensity variation of the surface As layer is less than that from the As bulk intensity since its emission is transferred from the surface peak into chemically shifted As peak. Deposition of ZnSe results in a substrate core level shift of 0.59 eV toward lower binding energy. A value of 0.91 eV for the valence band offset, with the valence band maximum of ZnSe below that of GaAs, was obtained.

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Section: A Growthmentioning

confidence: 98%

“…[4][5][6][7][8] Zhu presented a theoretical model of ZnSe growth. [4][5][6][7][8] Zhu presented a theoretical model of ZnSe growth.…”

Section: A Growthmentioning

confidence: 99%

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Photoemission studies of ZnSe epilayers grown on GaAs(111)B surface

Feng

Leckey

Riley

et al. 2001

Journal of Applied Physics

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“…Unlike ZnSe, which has been extensively studied [17], only very few data are available for zinc blende MgSe deposition on ZnSe. No measured value of the zinc blende MgSe lattice constant has been reported before 1998 [14]. As far as we know, no systematic photoemission studies of the zinc blende MgSe core levels and valence band have been reported so far.…”

Section: Introductionmentioning

confidence: 97%

“…Reflection highenergy electron diffraction (RHEED) patterns showed that MgSe has fourfold zinc blende symmetry. These RHEED images were explained as a superposition of 2D and 3D diffraction spots [14]. X-ray photoelectron spectroscopy had been used to measure the valence band offset for the MgSe heterojunction grown by MBE [15].…”

Section: Introductionmentioning

confidence: 99%

MBE growth of MgSe thin films on ZnSe/GaAs(001) substrates

Feng¹,

Riley²,

Leckey³

et al. 2001

J. Phys. D: Appl. Phys.

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MBE growth of MgSe thin films on ZnSe/GaAs(001) substrates is studied. Insight into the formation mechanism of this type of surface, the interface, and the bulk has been provided by photoemission spectroscopy. Detailed lineshape analyses of Se, Mg, and Zn core levels have been performed, following their evolution as MgSe is deposited. Shifts for all core levels are very small during the deposition, indicating band bending is virtually negligible under the present growth conditions. After deposition of 1.7 nm of MgSe, emission from the substrate is fully attenuated. A value of 0.44 nm is obtained for the inelastic scattering mean free path for electrons with a kinetic energy of around 65.8 eV in the MgSe thin films. Annealing the sample at 500 °C for 30 min results in full desorption of the thick Se layer formed on the MgSe surface. The intensities of the MgSe core level emissions obviously decrease. In contrast, the ZnSe peak reappears. Emission from metallic Mg is also observed. Annealing at 500 °C for 30 min more results in the desorption of nearly all the MgSe layer, whereas the intensity of the bulk ZnSe emission remains almost unchanged.

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Quantitative growth-investigation of zincblende ZnMgSe/GaAs(0 0 1) and ZnSe/GaAs(0 0 1) by means of RHEED, HRXRD and thickness monitoring

Cited by 2 publications

References 15 publications

Photoemission studies of ZnSe epilayers grown on GaAs(111)B surface

Photoemission studies of ZnSe epilayers grown on GaAs(111)B surface

MBE growth of MgSe thin films on ZnSe/GaAs(001) substrates

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