Quantitative evaluation of bonding energy for the interfaces in Cu metallization systems

Kamiya, Shoji; Suzuki, Shigeori; Yamanobe, Kiichiro; Saka, Masumi

doi:10.1063/1.2168044

Cited by 9 publications

(4 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[12][13][14][15] Figure 4 shows the finite element model used in the numerical simulation. [12][13][14][15] Figure 4 shows the finite element model used in the numerical simulation.…”

Section: B Numerical Simulation For Evaluating Interface Adhesionmentioning

confidence: 99%

See 1 more Smart Citation

A comparative study of a new microscale technique and conventional bending techniques for evaluating the interface adhesion strength in IC metallization systems

et al. 2010

Self Cite

View full text Add to dashboard Cite

We developed a new microscale technique for evaluating the local interface adhesion in a thin film stack and we compared it with a conventional four-point bending technique. Using the microscale technique, the interface adhesion was estimated to be 3.0 J/m 2 by comparing experimental results with numerical simulation results for interface crack propagation behavior. The four-point bending technique was applied to the same interface and the interface adhesion was estimated to be 4.4 J/m 2 by experiment. However, this value is an overestimate because it includes the plastic deformation of epoxy resin used to fabricate the specimens. By eliminating the additional energy dissipated through plastic deformation of the epoxy resin close to the interface crack tip, the interface adhesion was evaluated to be 3.3 J/m 2 . This value agrees well with that obtained using the microscale technique.

show abstract

“…[12][13][14][15] Figure 4 shows the finite element model used in the numerical simulation. [12][13][14][15] Figure 4 shows the finite element model used in the numerical simulation.…”

Section: B Numerical Simulation For Evaluating Interface Adhesionmentioning

confidence: 99%

“…Since the virtual crack propagation method is not suitable for analysis that includes plastic deformation, the interface adhesion was evaluated using the crack closure method expressed by [12][13][14][15] :…”

Section: Effect Of Plastic Deformation In Copper Layermentioning

confidence: 99%

A comparative study of a new microscale technique and conventional bending techniques for evaluating the interface adhesion strength in IC metallization systems

et al. 2010

Self Cite

View full text Add to dashboard Cite

show abstract

“…Recently, Kamiya and coworkers have developed a micronscale evaluation method. 11,12) In this method, small blocks of the insulation layer material on the Cu conductive layer were used as specimens, [13][14][15] and crack extension was simulated by the finite element method to evaluate the Cu/SiN interface adhesion energy G c . [16][17][18] In our previous study, three-dimensional elastic crack propagation simulation and the crack-closer method were used to evaluate interface adhesion energy, G c .…”

Section: Introductionmentioning

confidence: 99%

Development of Cu/Insulation Layer Interface Crack Extension Simulation with Crystal Plasticity

Koiwa

Omiya

Shishido

et al. 2013

Jpn. J. Appl. Phys.

Self Cite

View full text Add to dashboard Cite

A novel scheme for the evaluation of interface adhesion energy was examined by a detailed numerical simulation of interface crack extension. The effects of crystal orientation on the Cu/SiN interface adhesion strength of LSI was evaluated using the finite element method. Crack extension simulation was conducted with a model of the actual specimen used for the interface fracture test. The characteristics of elastic–plastic deformation, which changes significantly depending on crystal orientation, were taken into account in the model. With this scheme, the effect of orientation of single crystals on the maximum load P max was investigated under the condition of a constant bonding energy of the interface at the beginning of unstable crack propagation during the fracture test. The values of P max obtained with a number of different crystal orientations ranged over 179–311 µN. The result indicates that the crack propagates more easily in the case that slip deformation of Cu near the interface starts with a low stress, as in the case of the (111) surface. It implies that the apparent interface adhesion strength represented by the load required to debond the interface strongly depends on Cu crystal orientation, because the amount of energy used for plastic deformation of the Cu crystal changes with crystal orientation near the interface.

show abstract

“…6 Sputtered Cu atoms leave the target with relatively high energy (a few eV) but lose it rapidly due to collisions with the background gas. It had been demonstrated that Cu forms a much stronger interface with the barrier for sputter-deposited films compared to evaporated films.…”

Section: Introductionmentioning

confidence: 99%

Improving the quality of barrier/seed interface by optimizing physical vapor deposition of Cu Film in hollow cathode magnetron

Dulkin

Luo

et al. 2011

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

Articles you may be interested inFlux and energy analysis of species in hollow cathode magnetron ionized physical vapor deposition of copper Rev. Sci. Instrum. 81, 123502 (2010); 10.1063/1.3504371In situ plasma diagnostics study of a commercial high-power hollow cathode magnetron deposition toolThe quality of physical vapor deposition (PVD) grown barrier/seed interface in Cu interconnect metallization was significantly improved by enhancing Cu nucleation on the Ta barrier surface. This was accomplished through filtering of nonenergetic species from the deposition flux, increasing the fraction of Cu ions, improving metal ion flux uniformity, and minimizing gas ion bombardment of the growing film. The self-sputtering ability of Cu was combined with a magnetically confined high-density plasma in the Novellus hollow cathode magnetron (HCM V R ) PVD source. Spatial profiles of plasma density and temperature, as well as ion flux, metal ion fraction, and ion energy, were measured by planar Langmuir probes, quartz crystal microbalances, and gridded energy analyzers, all located at the wafer level. Multiple criteria, such as seed step coverage and roughness, the seed layer's resistance to agglomeration, and its stability in the plating bath, have been used to evaluate interface quality. As a result, a new and improved Cu PVD process which demonstrates superior stability during subsequent process steps and ensures successful electrofill performance with a more than 50 % reduction in minimal requirement of field thickness as well as sidewall thickness has been developed.

show abstract

Quantitative evaluation of bonding energy for the interfaces in Cu metallization systems

Cited by 9 publications

References 16 publications

A comparative study of a new microscale technique and conventional bending techniques for evaluating the interface adhesion strength in IC metallization systems

A comparative study of a new microscale technique and conventional bending techniques for evaluating the interface adhesion strength in IC metallization systems

Development of Cu/Insulation Layer Interface Crack Extension Simulation with Crystal Plasticity

Improving the quality of barrier/seed interface by optimizing physical vapor deposition of Cu Film in hollow cathode magnetron

Contact Info

Product

Resources

About