Quantitative electrostatic force microscopy on heterogeneous nanoscale samples

Palacios-Lidón, E.; Abellán, J.; Colchero, J.; Munuera, Carmen; Ocal, Carmen

doi:10.1063/1.2099527

Cited by 26 publications

(16 citation statements)

References 20 publications

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“…Consequently, the measurement is performed in the so-called AM-FM mode [33]. Tip-sample distance was maintained between 5 and 10 nm, resulting in V CPD imaging with high spatial (~ 10 nm) and potential (~ 30 V) resolution [32,34]. For SPV the samples were illuminated from the top by the light of a 100 W Oriel mercury lamp with the use of an optical fiber.…”

Section: Electrical Characterization Kpfm and Spvmentioning

confidence: 99%

Direct assessment of p–n junctions in single GaN nanowires by Kelvin probe force microscopy

et al. 2016

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Making use of Kelvin probe force microscopy, in dark and under ultraviolet illumination, we study the characteristics of p-n junctions formed along the axis of self-organized GaN nanowires (NWs).We map the contact potential difference of the single NW p-n junctions to locate the space charge region and directly measure the depletion width and the junction voltage. Simulations indicate a shrinkage of the built-in potential for NWs with small diameter due to surface band bending, in qualitative agreement with the measurements. The photovoltage of the NW/substrate contact is studied by analysing the response of NW segments with p-and n-type doping under illumination. Our results show that the shifts of the Fermi levels, and not the changes in surface band bending, are the most important effects under above band-gap illumination. The quantitative electrical information obtained here is important for the use of NW p-n junctions as photovoltaic or rectifying devices at the nanoscale, and is especially relevant since the technique does not require the formation of ohmic contacts to the NW junction.2

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Section: Electrical Characterization Kpfm and Spvmentioning

confidence: 99%

Direct assessment of p–n junctions in single GaN nanowires by Kelvin probe force microscopy

et al. 2016

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“…Understanding the electric field effect in nanostructured thin films is a key issue in nanoscience nowadays. 1 By applying a voltage between a force microscope tip and a sample, electrostatic force microscopy (EFM) [2][3][4][5][6][7][8] has been used to analyze different properties of thin films at the nanoscale. 9 Recently, single and few layer graphene (FLG) 10 have attracted much attention because of its atypical response to electrostatic fields, which is in sharp contrast with that expected for conventional conducting or semiconducting films.…”

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confidence: 99%

Ultrahigh dielectric constant of thin films obtained by electrostatic force microscopy and artificial neural networks

Castellano‐Hernández

Sacha

2012

Applied Physics Letters

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Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.A detailed analysis of the electrostatic interaction between an electrostatic force microscope tip and a thin film is presented. By using artificial neural networks, an equivalent semiinfinite sample has been described as an excellent approximation to characterize the whole thin film sample. A useful analytical expression has been also developed. In the case of very small thin film thicknesses (around 1 nm), the electric response of the material differs even for very high dielectric constants. This effect can be very important for thin materials where the finite size effect can be described by an ultrahigh thin filmdielectric constant.This work was supported by TIN2010-196079. G.M.S. acknowledges support from the Spanish Ramón y Cajal Program

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“…28,29 In this technique, the signal ESFM m is nullified with an auxiliary feedback system by adjusting the tip voltage, then the voltage applied to the tip is precisely the contact potential (V DC 5 V CP ). Frequency detection gives higher spatial resolution as compared to force detection ESFM, 27,30,31 in addition, it allows for a correct determination of contact potential. An external lock-in board was used for the ESFM and KPM measurements using V ac voltages as low as 500 mV at an electrical modulation frequency m elec 5 7 kHz.…”

Section: Full Papermentioning

confidence: 99%

Metal‐conducting polymer interface studied by Kelvin probe microscopy: Au and Al on poly(3‐octyl‐thiophene)

Abad

Colchero

2014

J Polym Sci B Polym Phys

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In this work, we report a Kelvin probe microscopy investigation on the structural and electronic properties of gold and aluminum thin films evaporated on poly(3-octyl-thiophene) films. Our experimental setup allows us to perform scanning force microscopy (SFM) studies of the same area even if the sample is taken out of the SFM system for different processes (Au and Al evaporation). This allows a detailed study of the effect of adsorbed metal particles on the morphology and electrical properties of polymer thin films at the nanoscale. We found different behavior for both metals in morphology and electrical properties at the interface. These results can contribute to explain what happens at the metal-polymer interface of the devices when the metal contacts are grown. Thereby the observed nanoscale structural changes can be correlated with the overall performance of the fabricated devices.

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Quantitative electrostatic force microscopy on heterogeneous nanoscale samples

Cited by 26 publications

References 20 publications

Direct assessment of p–n junctions in single GaN nanowires by Kelvin probe force microscopy

Direct assessment of p–n junctions in single GaN nanowires by Kelvin probe force microscopy

Ultrahigh dielectric constant of thin films obtained by electrostatic force microscopy and artificial neural networks

Metal‐conducting polymer interface studied by Kelvin probe microscopy: Au and Al on poly(3‐octyl‐thiophene)

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