Quantitative Dopant Profiling by Energy Filtering in the Scanning Electron Microscope

Chee, Augustus K. W.

doi:10.1109/tdmr.2016.2531506

Cited by 33 publications

(40 citation statements)

References 30 publications

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“…Whereas the doping contrast sensitivity to low N a is unchanged by energy-filtering 26 , it reduced considerably after surface-treatment (Fig. 1 ).…”

Section: Resultsmentioning

confidence: 98%

“…The surface band-bending is strong in heavily doped regions due to an increased surface state density, thereby imparting (attenuating) kinetic energy for SEs escaping the p -type ( n -type) surface 13 , and hence boosting doping contrast. For moderate to light doping, the internal surface fields are weak, and extend deeper below the surface 13 ; but the surface band-bending effect on SEs (within the escape depth), which although differentiates the doping level, is not expected to be as significant 13 , 26 as that of the patch fields (see later). Consequently, doping contrast is reduced since the surface Fermi level pinning results in decreased surface potentials or patch fields, which are in turn essentially independent of the doping 13 , 29 .…”

Section: Resultsmentioning

confidence: 98%

“…Figure 1 compares the unfiltered doping contrast from abrupt homojunctions of freshly-cleaved and NH 4 F-treated silicon specimens. The extraction potential was 20 V and the working distance was ~6 mm, providing standard micro-analytical conditions for strong doping contrast and high signal-to-noise quality 8 , 26 , 29 . A native oxide surface layer, ca .…”

Section: Resultsmentioning

confidence: 99%

“…Comparing freshly-cleaved specimens a and b , doping contrast disparities for a given N a are due to the influence of doping geometry-dependent patch fields with or without the thin silicon-germanium epitaxial marker layer 26 . Within experimental error, there is practically no difference in the doping contrast from treated surfaces of heavily doped regions ( eg .…”

Section: Resultsmentioning

confidence: 99%

“…Optimisation and quantification schemes are thus continually being developed and deployed to exploit the SE characteristics for rapid, contactless and non-destructive dopant profiling in the SEM at high spatial resolution. Notably, energy-filtered imaging allows improved quantitative features, reproducibility, sensitivity and accuracy 9 , 21 – 26 . Further, by acquiring an image series through an energy window of interest, in situ SE spectromicroscopy mandates an additional dimension permitting evaluation of the kinetic energy constituents of the composite signal 22 , 27 .…”

Section: Introductionmentioning

confidence: 99%

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Enhancing doping contrast and optimising quantification in the scanning electron microscope by surface treatment and Fermi level pinning

Chee

2018

Sci Rep

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Recent advances in two-dimensional dopant profiling in the scanning electron microscope have enabled a high throughput, non-contact process diagnostics and failure analysis solution for integrated device manufacturing. The routine (electro)chemical etch processes to obtain contamination-free, hydrogen-terminated silicon surfaces is industrially important in ULSI microfabrication, though doping contrast, which is the basis for quantitative dopant profiling, will be strongly altered. We show herein that ammonium-fluoride treatment not only enabled doping contrast to be differentiated mainly by surface band-bending, but it enhanced the quality of linear quantitative calibration through simple univariate analysis for SE energies as low as 1 eV. Energy-filtering measurements reveal that the linear analytical model broached in the literature (c.f. Kazemian et al., 2006 and Kazemian et al., 2007) is likely to be inadequate to determine the surface potential across semiconductor p-n junctions without suitable deconvolution methods. Nevertheless, quantification trends suggest that energy-filtering may not be crucial if patch fields and contamination are absolutely suppressed by the appropriate edge termination and passivation.

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“…Whereas the doping contrast sensitivity to low N a is unchanged by energy-filtering 26 , it reduced considerably after surface-treatment (Fig. 1 ).…”

Section: Resultsmentioning

confidence: 98%

Section: Resultsmentioning

confidence: 98%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Enhancing doping contrast and optimising quantification in the scanning electron microscope by surface treatment and Fermi level pinning

Chee

2018

Sci Rep

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Densification, microstructure, and nanomechanical evaluation of pulsed electric sintered zirconia-silicon nitride reinforced Ti-6Al-4 V alloy

Ogunmefun,

Olubambi,

Bayode

et al. 2024

Int J Adv Manuf Technol

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In this study, the influence of silicon nitride (Si3N4) and zirconia (ZrO2) ceramics was examined on the titanium alloy using the pulsed electric current sintering technique to investigate the microstructural behavior, densification, and nanomechanical properties of these composites. Si3N4 and ZrO2 were dispersed in Ti-6Al-4 V at a functional pressure of 50 MPa, a sintering temperature of 1200 °C, a heating rate of 100 °C/min, and a holding time of 10 min. The ternary composite samples were prepared viz, Cs1 (Ti6Al4V-3 vol.% Si3N4-15 vol.% ZrO2), Cs2 (Ti6Al4V-3 vol.% Si3N4-10 vol.% ZrO2), and Cs3 (Ti6Al4V-3 vol.% Si3N4-5 vol.% ZrO2). The bulk morphology of the composites was studied using scanning electron microscopy (SEM) equipped with EDS, and the phase contents were identified with an X-ray diffractometer (XRD). The relative density results for the tri-composites showed that the Cs1 sample recorded the highest at 99.94%, producing a fully dense sintered composite. However, there was a drop in the relative density of composites Cs2 and Cs3, recording 97.73% and 97.11%, respectively, comparable to the unreinforced Ti-6Al-4 V alloy with 98.65%. The nanoindentation examination conducted for the trio-composites showed linear mechanical responses/improvement, with Vickers hardness, from 589.31 to 865.70 MPa; nano hardness, from 6.466 to 9.441 GPa, and elastic modulus, from 113.52 to 185.95 GPa.

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Nonlinearity Analysis of Quantum Capacitance and its Effect on Nano-Graphene Field Effect Transistor Characteristics

Munindra

Nand

2022

J. Electron. Mater.

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Quantitative Dopant Profiling by Energy Filtering in the Scanning Electron Microscope

Cited by 33 publications

References 30 publications

Enhancing doping contrast and optimising quantification in the scanning electron microscope by surface treatment and Fermi level pinning

Enhancing doping contrast and optimising quantification in the scanning electron microscope by surface treatment and Fermi level pinning

Densification, microstructure, and nanomechanical evaluation of pulsed electric sintered zirconia-silicon nitride reinforced Ti-6Al-4 V alloy

Nonlinearity Analysis of Quantum Capacitance and its Effect on Nano-Graphene Field Effect Transistor Characteristics

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