Abstract:MOS and MIS capacitor has been extensively studied in past several decades by many authors. It has been expected to reveal how basic physics relate electron device operation. In this structure, several physical phenomena co-work and then exhibit the electrical properties measured in IV-and CV-characteristics. On the other hand, the conventional models were established separately for the inversion layer (positive gate voltage), the depletion region (negative-low gate voltage), and the accumulation region (negat… Show more
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