Quantitative determination of lattice parameters from CBED patterns: accuracy and performance

Wittmann, R.; Parzinger, C.; Gerthsen, D.

doi:10.1016/s0304-3991(97)00107-1

Cited by 41 publications

(21 citation statements)

References 14 publications

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“…Convergence beam electron diffraction ͑CBED͒ seems very promising because of its extremely fine spatial resolution ͑up to 1 nm͒, high strain sensitivity ͑up to 2 ϫ 10 −4 ͒ and possible three-dimensional information. 4,5 However, the sample needs to be relatively thick ͑Ͼ150 nm͒ and oriented away from a low index axis ͑for instance along a ͗230͘ direction, 11°away from a ͗110͘ direction͒. 5 In microelectronics devices, where structures are generally aligned along ͗110͘ or ͗001͘ directions these conditions lead to a shadowing of some interfacial regions.…”

Section: Improved Precision In Strain Measurement Using Nanobeam Elecmentioning

confidence: 99%

Improved precision in strain measurement using nanobeam electron diffraction

Béché¹,

Rouvière²,

Clément³

et al. 2009

Applied Physics Letters

162

101

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Improvements in transmission electron microscopy have transformed nanobeam electron diffraction into a simple and powerful technique to measure strain. A Si0.69Ge0.31 layer, grown onto a Si substrate has been used to evaluate the precision and accuracy of the technique. Diffraction patterns have been acquired along a ⟨110⟩ zone axis using a FEI-Titan microscope and have been analyzed using dedicated software. A strain precision of 6×10−4 using a probe size of 2.7 nm with a convergence angle of 0.5 mrad has been reached. The bidimensional distortion tensor in the plane perpendicular to the electron beam has been obtained.

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Section: Improved Precision In Strain Measurement Using Nanobeam Elecmentioning

confidence: 99%

Improved precision in strain measurement using nanobeam electron diffraction

Béché¹,

Rouvière²,

Clément³

et al. 2009

Applied Physics Letters

162

101

View full text Add to dashboard Cite

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“…The main advantage is that distances between diffraction spots only depend on the lattice parameter according to Bragg's law [16]. There are different techniques to measure strain using diffraction, e.g., from higher-order Laue zone (HOLZ) lines in convergent-beam electron diffraction (CBED) patterns [17], nano-beam electron diffraction (NBED) [18,19], selected-area diffraction [20] or nano-beam precession electron diffraction [21,22]. In this paper we study the NBED-method proposed by Müller et al [23], which analyzes distances between diffraction reflections.…”

Section: Introductionmentioning

confidence: 99%

Theoretical study of precision and accuracy of strain analysis by nano-beam electron diffraction

et al. 2015

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“…The sensitivity of CBED to lattice strain is on the order of 2 ϫ 10 −4 . 4 Investigators have used this technique to probe the elastic strains in silicon in the vicinity of shallow trench isolation structures and gate channel regions in devices. 5,6 One large limitation of this technique is that specimens must be sufficiently thin for electrons to pass through them.…”

Section: Introductionmentioning

confidence: 99%

Convergent beam electron diffraction measurements of relaxation in strained silicon using higher order Laue zone line splitting

Diercks

Kaufman

Needleman

2009

Journal of Applied Physics

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Articles you may be interested inStudy of strain fields caused by crystallization of boron doped amorphous silicon using scanning transmission electron microscopy convergent beam electron diffraction method J. Appl. Phys. 112, 043518 (2012); 10.1063/1.4747838 Direct strain measurement in a 65 nm node strained silicon transistor by convergent-beam electron diffraction Nanoscale strain analysis of strained-Si metal-oxide-semiconductor field effect transistors by large angle convergent-beam electron diffraction Strain analysis in silicon substrates under uniaxial and biaxial stress by convergent beam electron diffraction J. Vac. Sci. Technol. B 23, 940 (2005); 10.1116/1.1924583Strain determination in silicon microstructures by combined convergent beam electron diffraction, process simulation, and micro-Raman spectroscopy Convergent beam electron diffraction patterns of silicon from blanket wafers of ϳ50 nm Si 0.85 Ge 0.15 on Si and ϳ126 nm Si 0.79 Ge 0.21 on Si and from a complementary metal-oxide-semiconductor transistor with recessed Si 0.82 Ge 0.18 stressors were analyzed at zone axes slightly off ͗110͘. It was shown that certain higher order Laue zone lines split near the SiGe/Si interfaces, indicating that considerable relaxation occurred during the preparation of the transmission electron microscopy specimens. The variation in splitting as a function of distance from the interface and sample thickness is described. A simple method was used to estimate the relaxation and was compared to behavior predicted by linear elastic finite element modeling of the structures. These methods showed reasonable agreement for the structures that were examined.

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Quantitative determination of lattice parameters from CBED patterns: accuracy and performance

Cited by 41 publications

References 14 publications

Improved precision in strain measurement using nanobeam electron diffraction

Improved precision in strain measurement using nanobeam electron diffraction

Theoretical study of precision and accuracy of strain analysis by nano-beam electron diffraction

Convergent beam electron diffraction measurements of relaxation in strained silicon using higher order Laue zone line splitting

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