Quantitative depth profiling resonance ionization mass spectrometry of semiconductors with minimum standardization

Downey, S. W.; Emerson, A. B.

doi:10.1021/ac00009a016

Cited by 17 publications

(1 citation statement)

References 12 publications

(3 reference statements)

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“…Saturation is also necessary for quantitative B measurements. 5 After each B depth profile is obtained, the laser pulse energy is measured to ensure that the detection sensitivity has not changed.…”

Section: Methodsmentioning

confidence: 99%

Depth profiling of dopants in thin gate oxides in complementary metal– oxide–semiconductor structures by resonance ionization mass spectrometry

Downey

Emerson

Georgiou

et al. 1995

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The thickness of gate dielectrics for complementary metal-oxide-semiconductor ͑CMOS͒ devices with 0.1 to 0.35 m gate dimensions is typically 4 to 7 nm. Besides serving as an insulator, the dielectric, usually SiO 2 , also acts as a diffusion barrier between the doped polycrystalline silicon gate material and the Si substrate ͑channel͒. Dopant diffusion from the poly-gate into the device channel may cause undesirable shifts in the transistor threshold voltage. The determination of dopant diffusion through the gate dielectric into the channel region of the transistor is necessary to optimized device processing. This paper reports a method, resonance ionization mass spectrometry ͑RIMS͒, to measure dopant distribution profiles near the gate oxide. The pertinent spectroscopy of sputtered B and P atoms is demonstrated. Matrix effects are shown to be diminished. RIMS depth profiles of CMOS test structures show both dopant penetration into the channel and blockage by the gate oxide depending upon annealing conditions.

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Section: Methodsmentioning

confidence: 99%

Depth profiling of dopants in thin gate oxides in complementary metal– oxide–semiconductor structures by resonance ionization mass spectrometry

Downey

Emerson

Georgiou

et al. 1995

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

Self Cite

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Sputtering effects in Si, SiO₂ and the Si/SiO₂ interface

Downey

Emerson

1993

Surface & Interface Analysis

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Resonance ionization mass spectrometry (RIMS) is used to determine the optimal sputtering conditions for sampling Si and SiO, in depth profiling applications. Silicon RIMS signals are proportional to the Si concentration in these materials. Molecular formation during sputtering is significant with Xe+ at low energy ( 6 4 keV) and a high angle of incidence (-60' from normal). Sputtering with Ar+ suppresses molecular formation. Because matrix effects are minimized with RIMS, pecularities in profiles at interfaces are easy to observe. The RIMS profiles of Ni and Co implants into SiO, on Si show evidence of enhanced metalsilicon bonding at the oxide/substrate interface.

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Multiphoton Ionization and Laser Mass Spectrometry

Ledingham

1995

An Introduction to Laser Spectroscopy

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Quantitative depth profiling resonance ionization mass spectrometry of semiconductors with minimum standardization

Cited by 17 publications

References 12 publications

Depth profiling of dopants in thin gate oxides in complementary metal– oxide–semiconductor structures by resonance ionization mass spectrometry

Depth profiling of dopants in thin gate oxides in complementary metal– oxide–semiconductor structures by resonance ionization mass spectrometry

Sputtering effects in Si, SiO₂ and the Si/SiO₂ interface

Multiphoton Ionization and Laser Mass Spectrometry

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Quantitative depth profiling resonance ionization mass spectrometry of semiconductors with minimum standardization

Cited by 17 publications

References 12 publications

Depth profiling of dopants in thin gate oxides in complementary metal– oxide–semiconductor structures by resonance ionization mass spectrometry

Depth profiling of dopants in thin gate oxides in complementary metal– oxide–semiconductor structures by resonance ionization mass spectrometry

Sputtering effects in Si, SiO2 and the Si/SiO2 interface

Multiphoton Ionization and Laser Mass Spectrometry

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Product

Resources

About

Sputtering effects in Si, SiO₂ and the Si/SiO₂ interface