Quantitative depth profile analysis of boron implanted silicon by pulsed radiofrequency glow discharge time-of-flight mass spectrometry

Pisonero, Jorge; Lobo, Lara; Bordel, Nerea; Tempez, A.; Bensaoula, A.; Badi, N.; Sanz‐Medel, Alfredo

doi:10.1016/j.solmat.2010.04.002

Cited by 36 publications

(18 citation statements)

References 11 publications

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“…Concerning GD applications to photovoltaic‐related samples, GD‐OES and GD‐MS have been successfully employed for the analysis of aluminum‐doped ZnO (AZO) films and boron‐implanted and solar‐grade silicon . In addition, pulsed radiofrequency GD (rf‐PGD) coupled to OES has been recently investigated in our group for qualitative analysis of a‐Si:H TFSC .…”

Section: Introductionmentioning

confidence: 99%

A path towards a better characterisation of silicon thin‐film solar cells: depth profile analysis by pulsed radiofrequency glow discharge optical emission spectrometry

Sánchez

Fernández

Menéndez³

et al. 2013

Progress in Photovoltaics

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The analytical potential of radiofrequency pulsed glow discharge optical emission spectrometry (rf-PGD-OES) is investigated for quantitative depth profiling analysis of thin-film solar cells (TFSC) based on hydrogenated amorphous silicon (a-Si:H). This method does not require sampling at ultra-high-vacuum conditions, and so it facilitates higher sample throughput than do reference techniques. In this paper, the determination of compositional depth profiles of a-Si:H TFSC was performed by resorting to a multi-matrix calibration procedure. For this purpose, certified reference materials, as well as laboratory standards based on individual layers of doped a-Si:H, were simultaneously employed to build the analytical calibration curves. Results show that rf-PGD-OES allows us to discriminate the different layers of photovoltaic devices: the front contact composed by ZnO:Al 2 O 3 (AZO), the a-Si:H layer (the B-doped, intrinsic a-Si:H and P-doped films), the AZO/ Al back contact and substrate. A good agreement with the nominal values for element concentrations (e.g. 0.4% of H, 1.5% of B and 3.7% of P) and layer thicknesses (in the range of 950 nm for the front contact and 13 nm for the P-doped a-Si:H layer) was obtained, demonstrating the ability of rf-PGD-OES for a direct, sensitive and high-depth-resolution analysis of photovoltaic devices. Moreover, diffusion processes between the coating layers, which could have an important influence on the final efficiency of TFSC, can be identified as well. Hence, the findings support the use of rf-PGD-OES as an analysis method in the development of photovoltaic thin films.

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Section: Introductionmentioning

confidence: 99%

A path towards a better characterisation of silicon thin‐film solar cells: depth profile analysis by pulsed radiofrequency glow discharge optical emission spectrometry

Sánchez

Fernández

Menéndez³

et al. 2013

Progress in Photovoltaics

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“…43 In particular, in this work, depth profile analysis of a CdTe solar cell using pulsed-rf-GD-ToFMS and ToF-SIMS has been compared, showing fairly good agreement.…”

Section: Discussionmentioning

confidence: 82%

Radiofrequency pulsed glow discharge-ToFMS depth profiling of a CdTe solar cell: A comparative study versus time of flight secondary ion mass spectrometry

González-Gago

Pisonero

Bordel

et al. 2013

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Improvement of CdTe solar cell performance with discharge control during film deposition by magnetron sputteringIn this manuscript, the authors compare and contrast depth profile data generated on the same commercially available CdTe cell using two analytical techniques, Time of flight secondary ion mass spectroscopy (ToF-SIMS), which is a well-established technique, and radiofrequency pulsed glow discharge (rf-PGD)-ToFMS, which is an emerging technique. The authors demonstrate that pulsed-rf-GD-ToFMS allows for a rapid analysis over a large (4 mm diameter) area of the sample at moderate vacuum conditions, while ToF-SIMS analyzes smaller regions (typically about 200 Â 200 lm 2 ) of the sample at ultrahigh vacuum conditions; the authors note that ToF-SIMS enables three dimensional analysis at micron or better lateral resolution. Both techniques show, in general, good agreement; however, some discrepancies are observed and discussed herein.

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“…The rf‐GD‐TOF‐MS can be operated in pulsed mode, where the sensitivity can be increased by integrating only the so‐called afterglow region (Figure ), where high ion intensity is observed. Despite poorer detection limits as compared with a sector field HR‐GD‐MS instrument, its features ideally qualify it for monitoring the composition of solid thin films indispensable in most PV device concepts . The work gives an insight into profiling of compound semiconductors and aSi films on poorly conductive substrates.…”

Section: Glow Discharge Time Of Flight Mass Spectrometrymentioning

confidence: 99%

Glow discharge techniques in the chemical analysis of photovoltaic materials

Schmitt

Venzago²,

Hoffmann

et al. 2012

Progress in Photovoltaics

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The presented study gives an integrated overview on the prospects of glow discharge (GD) methods in the chemical analysis of photovoltaic materials. With a focus on recent research and important photovoltaic (PV) materials, the GD coupled analytical methods, high resolution mass spectrometry (MS), time‐of‐flight‐mass spectrometry (TOF‐MS) and optical emission spectrometry (OES) are discussed. Each exemplary study carried out will point out the most suitable GD technique for the problem at hand, at the same time showing ways to increase analytical accuracy and to overcome typical instrumental restrictions. Challenging GD‐MS analyses of thin and ultra thin films (down to 20 nm) as well as GD‐MS and GD‐OES studies of ready‐to‐use modules were carried out, showing the reader the application potential of GD methods in a PV development or production process. For the first time, novel cell concepts based on crystalline silicon on glass and silicon nanowires are analyzed by GD‐OES, revealing precise chemical information on the devices. Copyright © 2012 John Wiley & Sons, Ltd.

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Quantitative depth profile analysis of boron implanted silicon by pulsed radiofrequency glow discharge time-of-flight mass spectrometry

Cited by 36 publications

References 11 publications

A path towards a better characterisation of silicon thin‐film solar cells: depth profile analysis by pulsed radiofrequency glow discharge optical emission spectrometry

A path towards a better characterisation of silicon thin‐film solar cells: depth profile analysis by pulsed radiofrequency glow discharge optical emission spectrometry

Radiofrequency pulsed glow discharge-ToFMS depth profiling of a CdTe solar cell: A comparative study versus time of flight secondary ion mass spectrometry

Glow discharge techniques in the chemical analysis of photovoltaic materials

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