2024
DOI: 10.1063/5.0204258
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Quantitative characterization of occupational sites of implanted P atoms in diamond

Jyoji Nakata,
Yuhei Seki,
Yasushi Hoshino

Abstract: The authors implanted P atoms at 50 and 140-keV energies with respective fluences of 1×1014 and 2×1014/cm2 into diamond thin films synthesized by chemical vapor deposition on the type-Ib diamond substrate formed by high-pressure and high-temperature conditions. The occupational sites of implanted P atoms were determined in each processing stage of P implantation, ion-beam-induced epitaxial crystallization (IBIEC) annealing by 3-MeV-Ne2+ ion irradiation at 750°C, and thermal annealing at 850°C in vacuum, by qua… Show more

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