Quantitative assessment of an integrated hydrodynamic thermal-capillary model for large-diameter Czochralski growth of silicon: comparison of predicted temperature field with experiment

Numerical Study on LiCaAlF<SUB>6</SUB> Czochralski Crystal Growth

“…Non-flat interface could be the principal reason for the generation of dislocations and consequently for many undesirable effects such as inhomogeneous distribution of impurities, strains, cracks, low-angle grain boundaries, gas bubble entrapment, facet etc. [4][5][6][7][8][9][10][11][12][13][14][22][23][24] At the melt-crystal interface, latent heat Q L is released during solidification and appears as a source term in the energy balance at the solidification interface as…”

“…The inversion (from convex to concave) of the interface shape is often taken as a critical condition experimentally, and the desirability of a flat interface has motivated theoretical, numerical and experimental investigations on the hydrodynamics of melt associated with the shape of the crystal-melt interface. [4][5][6][7][8][9][10][11][12][13][14] To date, many reports of the critical conditions for the flat interface and the inversion of interface shape have been published in the literature, but most of these studies have focused on the oxide rather than fluoride crystal. Because of the complex growth conditions and non-linear phenomena in the crystal growth process, the optimal parameters of crystal growth for different materials and growth conditions are difficult to be obtained by an empirical formulation or other simple ways.…”

Crystal growth of semiconductor bulk crystals

“…Steady (DC) and dynamic (AC) [59][60][61][62][63][64][65][66][67][68][69][70][71] electromagnetic fields are opening up new fields to meet an increasing demand for large-diameter crystals by using magnetic fields to control the shape of the solid-liquid interface. From the above point of view, efforts have been made to control the periodic and/or turbulent flow of melt inside a crucible of large diameter.…”

Fundamentals and Engineering of the Czochralski Growth of Semiconductor Silicon Crystals

“…The energy balance at the interface accounts for the convection of the internal energy and the conduction of the sensible heat (Mori, 2000;Kinney, 1993;Derby and Brown, 1988):…”