Quantitative and high spatial resolution d33 measurement of piezoelectric bulk and thin films

Abstract

A single beam laser interferometer based on a modified Mirau detection scheme with a vertical resolution of 5 pm was developed for localized d33 measurements on patterned piezoelectric films. The tool provides high spatial resolution (2 lm), essential for understanding scaling and processing effects in piezoelectric materials. This approach enables quantitative information on d33, currently difficult in local measurement techniques such as piezoresponse force microscopy. The interferometer is built in a custom microscope and employs a phase lock-in technique in order to detect sub-Angstrom displacements. d33 measurements on single crystal 0.67PbMg0.33Nb0.67O3-0.33PbTiO3 and bulk PbZrTiO3-5A ceramics demonstrated agreement within <3% with measurements using a double beam laser interferometer. Substrate bending contributions to out-of-plane strain, observed in thin continuous PbZr0.52Ti0.48O3 films grown on Si substrates is reduced for electrode diameters smaller than 100 lm. Direct scanning across room temperature and 150 C poled 5 lm and 10 lm features etched in 0.5 lm thick PbZr0.52Ti0.48O3 films doped with 1% Nb confirmed minimal substrate contributions to the effective d33,f. Furthermore, enhanced d33,f values were observed along the feature edges due to partial declamping from the substrate, thus validating the application of single beam interferometry on finely patterned electrodes.

Enhanced magnetopiezoelectric effect at the Néel temperature in CaMn2Bi2

“…For the MPE measurement, we used a laser Doppler vibrometer equipped with a liquidnitrogen optistat for low-temperature measurements [21]. The laser Doppler vibrometry allows for non-contact detection of subpicometer-level tiny vibrations [32][33][34][35] by measuring the Doppler frequency shift of the scattered light from the sample using a two-beam laser interferometer. This technique has been widely used in room-temperature experiments for the characterization of piezoelectric thin films [34,35] and for the detection of small cantilever oscillations with resonant frequencies [36].…”

“…The laser Doppler vibrometry allows for non-contact detection of subpicometer-level tiny vibrations [32][33][34][35] by measuring the Doppler frequency shift of the scattered light from the sample using a two-beam laser interferometer. This technique has been widely used in room-temperature experiments for the characterization of piezoelectric thin films [34,35] and for the detection of small cantilever oscillations with resonant frequencies [36]. Very recently, we applied the laser Doppler vibrometry to a low-temperature experiment, and successfully detected very small MPE signals in EuMnBi 2 at 77 K [21].…”

Understanding the Role of Ferroelastic Domains on the Pyroelectric and Electrocaloric Effects in Ferroelectric Thin Films

“…Using the temperature coefficient of resistance (TCR), the temperature change in the top metal line was calculated and this was subsequently used to calculate Σ after solving a 1D heat transport model using the thermophysical properties of the heterostructure ( Table 1 ). Since, the ferroelectric thin film is clamped on the substrate, the secondary contribution due to the piezocaloric effect can be neglected and the measured value Σ should only account for the primary contributions (Σ = Σ int + Σ ext )…”

Integrated Piezoelectric AlN Thin Film with SU-8/PDMS Supporting Layer for Flexible Sensor Array

“…Based on these results, we can conclude that crystallized piezoelectric AlN thin films were grown effectively on SU-8 at room temperature using the reactive sputtering technique. measure the piezoelectric coefficient because a structure-induced clamping effect deflects the substrate [49]. Unfortunately, the coefficient of a micromachined piezoelectric thin film is difficult to measure, unlike the case for bulk material or a simple, continuous piezoelectric thin film on a Si wafer.…”