Quantitative analysis of the bond rearrangement process during solid phase epitaxy of amorphous silicon

Saito, Toshi; Ohdomari, Iwao

doi:10.1080/13642818408227655

Cited by 21 publications

(8 citation statements)

References 13 publications

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“…Early models attributed the SPE mechanism to the motion of a dangling bond type defect. 21,22 This defect aided the rearrangement of atoms at the interface via bond-breaking. More recently, Bernstein et al have shown that the SPE may occur through a number of both simple and complex mechanisms.…”

Section: Theoretical Backgroundmentioning

confidence: 99%

Dopant-enhanced solid-phase epitaxy in buried amorphous silicon layers

Johnson

McCallum

2007

Phys. Rev. B

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The kinetics of intrinsic and dopant-enhanced solid phase epitaxy (SPE) are studied in buried amorphous Si (a-Si) layers in which SPE is not retarded by H. As, P, B and Al profiles were formed by multiple energy ion implantation over a concentration range of 1 − 30 × 10 19 /cm 3 . Anneals were performed in air over the temperature range 460-660 o C and the rate of interface motion was monitored using time resolved reflectivity. The dopant-enhanced SPE rates were modeled with the generalized Fermi level shifting model using degenerate semiconductor statistics. The effect of band bending between the crystalline and amorphous sides of the interface is also considered. a

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Section: Theoretical Backgroundmentioning

confidence: 99%

Dopant-enhanced solid-phase epitaxy in buried amorphous silicon layers

Johnson

McCallum

2007

Phys. Rev. B

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“…This is further confirmed by the observation that more isolated boron atoms are found near the initial position of the a/c interface where the incoming crystalline phase boundary finds boron atoms not yet clustered. 18,19 They are related to the behavior of the interfacial dangling bond following three basic mechanisms: 20 ͑i͒ thermal generation of dangling bonds at ledges along the interface; ͑ii͒ migration of the dangling bonds along the ledges to reconstruct the network from the amorphous to the crystalline structure; and ͑iii͒ annihilation kinetics at dangling bond "traps." 16,17 All these effects were attributed to the impurity diffusion/segregation at the a/c interface 11 and to point-defect mechanisms.…”

Section: Introductionmentioning

confidence: 99%

Insights into solid phase epitaxy of ultrahighly doped silicon

Gouyé

Berbézier

Favre

et al. 2010

Journal of Applied Physics

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“…(26) to the data. We also assume that on average, r = 1/3 in accordance with Saito and Ohdomari's sequence 72 , i.e., three dangling bond migration events are needed to transfer one atom from the amorphous phase to the crystal. These assumptions result in…”

Section: Prefactormentioning

confidence: 99%

“…If a dangling bond migration event transfers r atoms from the amorphous phase to the crystal, ∆G o will be r times the free energy change per atom crystallized. Spaepen's model 71 of the (111) interface has been extended to the (100) interface by Saito and Ohdomari 72 . They identify a sequence of nine dangling bond jumps that result in the crystallization of three atoms.…”

Section: Kinetic Analysis Of the Dangling Bond Mechanismmentioning

confidence: 99%

Pressure-enhanced crystallization kinetics of amorphous Si and Ge: Implications for point-defect mechanisms

Lü

Nygren

Aziz

1991

Journal of Applied Physics

152

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The effects of hydrostatic pressure on the solid-phase epitaxial growth (SPEG) rate v of intrinsic Ge(100) and undoped and doped Si(100) into their respective self-implanted amorphous phases are reported. Samples were annealed in a high-temperature, high-pressure diamond anvil cell. Cryogenically loaded fluid Ar, used as the pressure transmission medium, ensured a clean and hydrostatic environment. v was determined by in situ time-resolved visible (for Si) or infrared (for Ge) interferometry. v increased exponentially with pressure, characterized by a negative activation volume of −0.46Ω in Ge, where Ω is the atomic volume, and −0.28Ω in Si. The activation volume in Si is independent of both dopant concentration and dopant type. Structural relaxation of the amorphous phases has no significant effect on v. These and other results are inconsistent with all bulk point-defect mechanisms, but consistent with all interface point-defect mechanisms, proposed to date. A kinetic analysis of the Spaepen–Turnbull interfacial dangling bond mechanism is presented, assuming thermal generation of dangling bonds at ledges along the interface, independent migration of the dangling bonds along the ledges to reconstruct the network from the amorphous to the crystalline structure, and unimolecular annihilation kinetics at dangling bond ‘‘traps.’’ The model yields v = 2 sin(θ)vsnr exp[(ΔSf + ΔSm)/k] exp− [(ΔHf + ΔHm)/kT], where ΔSf and ΔHf are the standard entropy and enthalpy of formation of a pair of dangling bonds, ΔSm and ΔHm are the entropy and enthalpy of motion of a dangling bond at the interface, vs is the speed of sound, θ is the misorientation from {111}, and nr is the net number of hops made by a dangling bond before it is annihilated. It accounts semiquantitatively for the measured prefactor, orientation dependence, activation energy, and activation volume of v, and the pressure of a ‘‘free-energy catastrophe’’ beyond which the exponential pressure enhancement of SPEG cannot continue uninterrupted due to a vanishing barrier to dangling bond migration. The enhancement of v by doping can be accounted for by an increased number of charged dangling bonds, with no change in the number of neutrals, at the interface. Quantitative models for the doping dependence of v are critically reviewed. At low concentrations the data can be accounted for by either the fractional ionization or the generalized Fermi-level-shifting models; methods to further test these models are enumerated. Ion irradiation may affect v by altering the populatio

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Quantitative analysis of the bond rearrangement process during solid phase epitaxy of amorphous silicon

Cited by 21 publications

References 13 publications

Dopant-enhanced solid-phase epitaxy in buried amorphous silicon layers

Dopant-enhanced solid-phase epitaxy in buried amorphous silicon layers

Insights into solid phase epitaxy of ultrahighly doped silicon

Pressure-enhanced crystallization kinetics of amorphous Si and Ge: Implications for point-defect mechanisms

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