Quantitative 3D mapping of chemical defects at charged grain boundaries in a ferroelectric oxide

Hunnestad, K. A.; Schultheiß, J.; C., Mathisen, A.; C., Hatzoglou,; Helvoort, Antonius T. J. van; Meier, D.

doi:10.48550/arxiv.2212.07924

2022

DOI: 10.48550/arxiv.2212.07924

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Quantitative 3D mapping of chemical defects at charged grain boundaries in a ferroelectric oxide

K. A. Hunnestad¹,

J. Schultheiß²,

Mathisen, A. C.³

et al.

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Quantitative 3D mapping of chemical defects at charged grain boundaries in a ferroelectric oxide

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