“…However, H U increases quasilinearly as t decreases, indicating an interfacial origin of UMA, which has also been observed previously [41,42]. Similar to H U , g increases as t decreases, which is due to an enhanced orbital magnetic moment through a loss of bonds [43,44] and/or an enhanced sensitivity to the interfacial SOI as t decreases. To reproduce the φ H and f dependence of H R shown in Figs.…”
“…However, H U increases quasilinearly as t decreases, indicating an interfacial origin of UMA, which has also been observed previously [41,42]. Similar to H U , g increases as t decreases, which is due to an enhanced orbital magnetic moment through a loss of bonds [43,44] and/or an enhanced sensitivity to the interfacial SOI as t decreases. To reproduce the φ H and f dependence of H R shown in Figs.…”
“…Regardless of Fe, the values for Ni determined by XMCD already deviate significantly from those extracted from the g factor from FMR. This was recently attributed to the presence of spin mixing in metallic multilayers [28]. However, in view of the large uncertainties of the Fe XMCD in this oxidic system we cannot draw meaningful conclusions regarding the discrepancy between XMCD and FMR.…”
The structural and magnetic properties of Zn/Al doped nickel ferrite thin films can be adjusted by changing the Zn and Al content. The films are epitaxially grown by reactive magnetron sputtering using a triple cluster system to sputter simultaneously from three different targets. Upon the variation of the Zn content, the films remain fully strained with similar structural properties, while the magnetic properties are strongly affected. The saturation magnetization and coercivity as well as resonance position and linewidth from ferromagnetic resonance (FMR) measurements are altered depending on the Zn content in the material. The reason for these changes can be elucidated by investigation of the x-ray magnetic circular dichroism spectra to gain site-and valence-specific information with elemental specificity. Additionally, from a detailed investigation by broadband FMR, a minimum in g factor and linewidth could be found as a function of film thickness. Furthermore, the results from a variation of the Al content using the same set of measurement techniques is given. Other than for Zn, the variation of Al affects the strain and even more pronounced changes to the magnetic properties are apparent.
“…Subsequently, spin-orbital coupling causes a spin-mixing state (the spin states of the electrons are mixtures of pure "up" and "down", relative to the magnetic field). Shaw and colleagues calculated the spin-mixing parameter by combining FMR With XCMD, and the results obtained reveal that any small mixing parameter influences ferromagnetic resonance (FMR) spectra [41]. The extrinsic magnetic damping is often affected by Journal of Materials Science and Chemical Engineering doping or lattice effect, which changes the crystal structure [42].…”
Section: Effect Of P On Complex Permeability Spectra Of Femnp Amorpho...mentioning
In this work, we investigated the influence of phosphorus and magnetic anneal on the soft magnetic properties of electrodeposited FeMnP alloy films prepared by changing sodium hypophosphite concentrations. X-ray diffraction radiation patterns showed an amorphous structure of electrodeposited alloy films. The saturation magnetization and coercivity value decreased from 586 emu/cc to 346 emu/cc, and 52 Oe to 18 Oe, with the P content increased, respectively. The absorption resonance peak became broad as the P content increased, and the natural resonance frequency decreased from 1.8 GHz to 0.6 GHz, with the P content increasing. Magnetic annealing of samples reduced the magnetic damping, and natural resonance frequency increased by about 1.8 GHz and 3.5 GHz for the sample with lower and higher P content. The film structure with lower P content changed at 300˚C, while the structure remains unchanged for the films with higher P content. Thus, the crystallization temperature could depend on the P content in the film. FeMnP alloy films could be used in high-frequency devices.
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