Quantification of ion bombardment effects in c-BN thin films deposited by rf magnetron sputtering

Lousa, A.; Gimeno, S.

doi:10.1016/s0925-9635(00)00552-5

Cited by 11 publications

(9 citation statements)

References 16 publications

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“…[1][2][3][4][5][6] In order to estimate the energy flux density, several techniques have been used based, namely, on surface temperature measurements. This influences the film growth, modification, or etching processes.…”

Section: Introductionmentioning

confidence: 99%

Diagnostic system for plasma/surface energy transfer characterization

Thomann¹,

Semmar²,

Dussart³

et al. 2006

Review of Scientific Instruments

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A protection system for the JET ITER-like wall based on imaging diagnosticsa) Rev. Sci. Instrum. 83, 10D727 (2012); 10.1063/1.4738742Disentangling fluxes of energy and matter in plasma-surface interactions: Effect of process parametersThe knowledge of the effective energy deposited onto a surface by the reactive particles ͑ions, electrons, metastables, photons, etc.͒ in plasma processes such as thin-film deposition, sputtering, etching, etc., is of high interest to understand the basic mechanisms of energy transfer. In this article, a diagnostic is developed to directly measure the global energy transferred to surfaces ͑reactor walls, substrates, material to be modified, etc.͒ immerged in low-pressure plasmas. The diagnostic is based on a commercial HFM7-Vattel® microsensor, confined in a temperature-controlled substrate holder. The manufacturer calibration specifications are only given for atmospheric pressure. They cannot be used in low-pressure plasma conditions ͑typically 0.1-20 Pa͒. Thus, for this particular application, a calibration of the microsensor is required. It is performed at various pressures, between vacuum and the ambient, according to the NIST protocol and using a homemade blackbody ͑BB͒. It is shown that only curves obtained in vacuum or pressures below 0.1 Pa are valuable for a true calibration of the sensor. The others are perturbed by the heating of the gas in the BB surroundings. Measurements carried out in a typical transformer coupled plasma reactor in argon gas are presented. Typically the values are of the order of tens or hundreds of mW/ cm 2 in our experimental conditions. They are consistent with an estimation of the energy transferred by charged particles ͑ions and electrons͒ performed from Langmuir probe characterization of the plasma.

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Section: Introductionmentioning

confidence: 99%

Diagnostic system for plasma/surface energy transfer characterization

Thomann¹,

Semmar²,

Dussart³

et al. 2006

Review of Scientific Instruments

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“…5,6 Unfortunately, much like diamond films, the synthesis of crystalline BN films is still in its early stages of development. Furthermore, although polycrystalline BN films have been prepared by a variety of physical and chemical vapor deposition techniques, 7,8,9,10,11,12,13 the capability does not currently exist for depositing large area single-crystal or oriented films of BN. Such single-crystal films are required for many of the applications of interest.…”

Section: Introductionmentioning

confidence: 99%

The formation of epitaxial hexagonal boron nitride on nickel substrates

Yang

Prater²,

Liu

et al. 2005

Journal of Elec Materi

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The various crystallographic forms of boron nitride (BN) are of great technological interest because of their demonstrated tribological, high-temperature, thermally conducting, electrically insulating, and wide-bandgap semiconductor properties. Unfortunately, the synthesis of crystalline BN films is still in the early stages of development. Furthermore, although polycrystalline BN films have been prepared by a variety of physical and chemical vapor deposition techniques, the capability does not currently exist for depositing large area single-crystal or oriented films of BN. Such single-crystal films are required for many applications of interest, especially in electronics. The present paper reports on a new approach to the oriented growth of boron nitride using a novel molten layer epitaxy technique. Well-oriented hexagonal boron nitride (h-BN) crystals were obtained with highly faceted crystal shapes. The h-BN was formed via precipitation from a molten, hydrogen-saturated Ni surface layer. Solid cubic BN was utilized as the source material and was dissolved into the substrate surface during a brief high-temperature anneal. It was found that surface melting occurred during this process and the B diffused into the Ni substrate, whereas the N was expelled into the growth chamber. Oriented BN was then precipitated as the surface layer was allowed to resolidify.

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“…In fact, ex-situ measurements of the global deposition rate of BN films as a function of the cBN content have been presented recently in clear support of this assumption [30]. Thus, based on this assumption any differences in the deposition rate during growth must be due to changes in the density during the phase evolution from hBN to cBN.…”

Section: Characterization Of Wide Bandgap Thin Film Growthmentioning

confidence: 77%

Characterization of Wide Bandgap Thin Film Growth Using UV-Extended Real Time Spectroscopic Ellipsometry: Applications to Cubic Boron Nitride

Zapien¹,

Collins²,

Pilione³

et al. 2002

Journal of Wide Bandgap Materials

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Boron nitride (BN) films with high cubic content were deposited using pulsed dc sputtering of a B 4 C target and rf biasing of the substrate. The film growth was characterized using UV-extended real-time spectroscopic ellipsometry. A threelayer model with constrained thickness evolution was used to characterize the growth of BN films on c-Si substrates. This model includes: (i) an initial hBN layer; (ii) a hBN þ cBN mixed-phase interface layer; and (iii) a cBN layer. The detailed layer evolution was obtained as a function of the substrate bias (V avg ) used to grow the BN films under steady-state conditions. These results showed a minimum in the thicknesses of the hBN and mixed-phase interface layers thus identifying an optimum substrate bias for cBN nucleation and growth under the deposition conditions used here.

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Quantification of ion bombardment effects in c-BN thin films deposited by rf magnetron sputtering

Cited by 11 publications

References 16 publications

Diagnostic system for plasma/surface energy transfer characterization

Diagnostic system for plasma/surface energy transfer characterization

The formation of epitaxial hexagonal boron nitride on nickel substrates

Characterization of Wide Bandgap Thin Film Growth Using UV-Extended Real Time Spectroscopic Ellipsometry: Applications to Cubic Boron Nitride

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