2011
DOI: 10.1002/pssb.201147407
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Quantification of impurity concentration in Cu2O and CuO via secondary ion mass spectrometry

Abstract: Secondary ion mass spectrometry (SIMS) is a technically matured analysis technique for the investigation of depth and lateral distributions in solids. The ''raw data'' of a SIMS measurement provides only qualitative information. For quantification so-called relative sensitivity factors (RSF) are mandatory. To our knowledge no RSFs have been determined for Cu 2 O and CuO so far. In this work the RSFs for 21 elements in Cu 2 O and 14 elements in CuO have been determined via ion implanted standards. For the RSF d… Show more

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Cited by 8 publications
(7 citation statements)
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“…For the nominally undoped samples, we find a nitrogen concentration [N] of (6.8 ± 5.9) × 10 19 and (5.7 ± 2.1) × 10 18 cm −3 for the RF and DC sputtered films, respectively. The latter value is somewhat below the lower detection limit of the instrument and, therefore, not entirely reliable . We observe a linear increase of the nitrogen concentration over one order of magnitude as a function of the nitrogen flow‐rate during growth.…”
Section: Resultsmentioning
confidence: 65%
See 1 more Smart Citation
“…For the nominally undoped samples, we find a nitrogen concentration [N] of (6.8 ± 5.9) × 10 19 and (5.7 ± 2.1) × 10 18 cm −3 for the RF and DC sputtered films, respectively. The latter value is somewhat below the lower detection limit of the instrument and, therefore, not entirely reliable . We observe a linear increase of the nitrogen concentration over one order of magnitude as a function of the nitrogen flow‐rate during growth.…”
Section: Resultsmentioning
confidence: 65%
“…The nitrogen content in the thin films was determined by secondary ion mass spectroscopy (SIMS) utilizing a Cameca‐Riber MIQ256 system, which is equipped with an oxygen primary ion source with 6 keV normalO2+ primary ion beam energy. For a quantitative analysis, we used relative sensitivity factors (RSF) obtained by investigating ion‐implanted standards . For the electrical characterization, a cloverleaf structure was transferred onto the samples by means of photolithography and wet‐chemical etching.…”
Section: Methodsmentioning
confidence: 99%
“…The result of peak fitting of the Cu 2p 3/2 core level is also shown. (c) Wagner plot for various copper-containing species; open circles for metallic Cu [13,[18][19][20][21], × for brass [13,22], open triangles and diamonds for Cu 2 O and CuO, respectively [13,18,[20][21][22][23], filled triangles for Cu 2 S [13,20,24,25], and filled diamonds for CuS [20,24,25]. Large diamonds with a cross inside are the data of the present study.…”
Section: Acknowledgementmentioning
confidence: 85%
“…The Cu 2p peaks are slightly skewed toward the higher-binding-energy side, and this is due to the existence of a subcomponent at 933.5 eV (Cu 2p 3/2 ). The energy position of the subcomponent implies that there exist Cu(II) species, possibly in the form of CuO [13,18,[20][21][22][23], although a satellite structure characteristic of the Cu(II) configuration is not apparent. The binding energy of the main Cu 2p 3/2 component (932.6 eV) coincides with that of Cu(0) or Cu(I) species [13,[18][19][20][21].…”
Section: Influence Of Vulcanizationmentioning
confidence: 99%
“…XPS measurement on the mesh surface after HWT has been performed to verify the corresponding chemical state and composition. XPS spectra 7 in Figure 4 reveals the Cu2p state at 932.4 eV and an atomic composition of ~30% O and 70% Cu, which all indicate the formation of Cu2O [19,20,48].…”
Section: Surface Morphology and Crystallographymentioning
confidence: 99%