Quantification of germanium and boron in heterostructures Si/Si1−xGex/Si by SIMS

Quantitative SIMS measurement of high concentration of boron in silicon (up to 20at.%) using an isotopic comparative method

“…[6]. The similar behaviour of two matrix elements of binary alloy has been already observed in the case of the Si/Ge alloys under O þ 2 beam [7].…”

Adsorption of genetically engineered proteins studied by time‐of‐flight secondary ion mass spectrometry (TOF‐SIMS). Part A: data acquisition and principal component analysis (PCA)

“…In the TOF-SIMS spectrum, the variation of the fragment intensity can be related to the changes of the secondary ion yields of amino acids adsorbed on different substrates, or the matrix effect. 47,48 As the present experiments compare the intensities of amino acids from different substrates, this effect cannot be excluded; however, variations of the fragment intensities were seen only for several specific amino acids in the sequence, and other amino acids showed little or no changes. Structurally each amino acid is linked via peptide bonding in the sequence, and the adsorption is carried out under moderate conditions.…”

Oxygen beam SIMS depth profiling of Si1−xGex layers: transient processes

“…The position of the minimum for a 9 keV primary beam under the given experimental conditions is estimated at a dose of ¾1.65 ð 10 17 atoms cm 2 . Using the 90% criterion, 11 and the assumption that the transient period is defined by the signals that stabilize latest, we find an increased transient period in Si 1 x Ge x alloys in comparison with pure Si by >10-20% for alloys with a Ge content <30 at.%. We assume (see below) that this effect is mainly related to chemical reactions at the interface between the oxide film generated by the ion beam and the Si 1 x Ge x layer and to segregation processes at this interface.…”