Abstract:Doping of semiconductors serve various purposes in metal‐oxide‐semiconductor (CMOS) technology, eg, increase carrier concentration and modify electric field distribution. With the scaling down of device and the introduction of three‐dimensional fin field‐effect transistors (FinFET), precise and reliable dopant quantification of concentration at the nano‐scale is critical. Laser‐assisted atom probe tomography (APT) provides a unique approach to characterize and quantify the dopant in three dimensions at sub‐nan… Show more
“…APT has already demonstrated its outstanding capability in characterizing dopants profile in other semiconductor systems having complex 3D geometry and complex alloy chemistry [110,111,112]. Inspired from these results, Si doped (Al x Ga 1−x ) 2 O 3 with x = 0-1.0 was investigated by APT [113].…”
Section: Dopant Detection and Dopant Profile Analysismentioning
Abstract(AlxGa1−x)2O3 is a novel ultra‐wide bandgap semiconductor with the potential to dominate future power electronics industries. High‐performance devices demand high Al content in (AlxGa1−x)2O3 but are limited by crystallinity degradation resulting from phase separation. Additionally, the solubility limit of Al is still under debate, and conclusive research is in progress. (AlxGa1−x)2O3 is also limited in high‐frequency applications owing to low carrier mobility and requires n‐type doping. For commercializing this material, the major obstacle is understanding dopant's behavior in the host (AlxGa1−x)2O3. To investigate these issues, an advanced characterization technique, atom probe tomography (APT), was employed to analyze the structural‐chemical evolution of (AlxGa1−x)2O3. In this review, we summarized our recent works on the structure‐chemistry investigation of (AlxGa1−x)2O3 with alloy composition and doping interaction. We introduced machine learning algorithms on APT data to reveal unrivaled knowledge, previously not achievable with conventional methodologies. The outstanding capabilities of APT to study (AlxGa1−x)2O3 with Al composition and doping will be considered significant for the wide bandgap semiconductors community.
“…APT has already demonstrated its outstanding capability in characterizing dopants profile in other semiconductor systems having complex 3D geometry and complex alloy chemistry [110,111,112]. Inspired from these results, Si doped (Al x Ga 1−x ) 2 O 3 with x = 0-1.0 was investigated by APT [113].…”
Section: Dopant Detection and Dopant Profile Analysismentioning
Abstract(AlxGa1−x)2O3 is a novel ultra‐wide bandgap semiconductor with the potential to dominate future power electronics industries. High‐performance devices demand high Al content in (AlxGa1−x)2O3 but are limited by crystallinity degradation resulting from phase separation. Additionally, the solubility limit of Al is still under debate, and conclusive research is in progress. (AlxGa1−x)2O3 is also limited in high‐frequency applications owing to low carrier mobility and requires n‐type doping. For commercializing this material, the major obstacle is understanding dopant's behavior in the host (AlxGa1−x)2O3. To investigate these issues, an advanced characterization technique, atom probe tomography (APT), was employed to analyze the structural‐chemical evolution of (AlxGa1−x)2O3. In this review, we summarized our recent works on the structure‐chemistry investigation of (AlxGa1−x)2O3 with alloy composition and doping interaction. We introduced machine learning algorithms on APT data to reveal unrivaled knowledge, previously not achievable with conventional methodologies. The outstanding capabilities of APT to study (AlxGa1−x)2O3 with Al composition and doping will be considered significant for the wide bandgap semiconductors community.
“…Also, a firm knowledge is required about how the dopant atoms are interacting with the matrix, especially, when the alloy composition is varied. APT has already demonstrated its outstanding capability in characterizing dopants profile in other semiconductor systems having complex 3D geometry and complex alloy chemistry [110,111,112]. Inspired from these results, Si doped (Al x Ga 1−x ) 2 O 3 with x = 0-1.0 was investigated by APT [113].…”
Section: Dopant Detection and Dopant Profile Analysismentioning
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