Quality indicators in methodology for designing RAM units as part of microprocessor systems in digital devices used in environmental engineering

Abstract

The article is devoted to the design of RAM blocks as part of microprocessor systems and methods for ensuring fault tolerance. The structural diagram of RAM and the process of the influence of heavy charged particles (HCP) on a memory integrated circuit (IC) are considered. Particular attention is paid to the influence of the biopolar effect on the fault tolerance of IC elements, as well as to emerging multibit events. The article analyzes the various phases of RAM operation and the reactions of memory circuit elements to the occurrence of failures caused by the impact of environment in digital devices used in environmental engineering.