Quality evaluation of homopetaxial 4H-SiC thin films by a Raman scattering study of forbidden modes

Wan, Lei; Zhao, Dishu; Wang, Fangze; Xu, Gu; Lin, Tao; Tin, C. C.; Feng, Zhaochi; Feng, Zhe Chuan

doi:10.1364/ome.8.000119

Cited by 14 publications

(7 citation statements)

References 23 publications

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“…Our phonon calculations for the pristine system using a primitive unit cell (PUC) give the high-energy Raman-active mode at 96.63 meV, which is in excellent agreement with the experimental value of 96.59 meV [69]. The phonon density of states (DOS) can be divided into two parts (Fig.…”

Section: Vibrational Modes Analysissupporting

confidence: 81%

Photoluminescence line shapes for color centers in silicon carbide from density functional theory calculations

et al. 2021

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Section: Vibrational Modes Analysissupporting

confidence: 81%

Photoluminescence line shapes for color centers in silicon carbide from density functional theory calculations

et al. 2021

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“…Photon energy (eV) Our phonon calculations for the pristine system using a primitive unit cell (PUC) give the high energy Raman-active mode at 96.63 meV, which is in excellent agreement with the experimental value of 96.59 meV. 68 The phonon density of states (DOS) can be divided into two parts (Fig. 4).…”

Section: B Luminescence Lineshapessupporting

confidence: 72%

Photoluminescence Lineshapes for Color Centers in Silicon Carbide from Density Functional Theory Calculations

Hashemi,

Linderalv,

Krasheninnikov

et al. 2020

Preprint

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“…The Raman shifts of the LO peak for two samples (S2 and S3) occurred at significantly lower wavenumbers than those of S1. It may be considered that the reason was that the LO phonon mode also caused a shift in the peaks toward lower frequencies, which could probably be attributed to the decrease in the grain size, internal stress from impurities, and the atomic size effect [22,[23][24][25][26][27][28]. The peak breadth and reduced intensity of the S1 sample were the result of the increase in the free carrier concentration, as shown in Figure The Raman spectra of the 4H-SiC crystals that were grown are shown in Figure 5.…”

Section: Figure 2amentioning

confidence: 99%

Defect-Induced Luminescence Quenching of 4H-SiC Single Crystal Grown by PVT Method through a Control of Incorporated Impurity Concentration

2022

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The structural defect effect of impurities on silicon carbide (SiC) was studied to determine the luminescence properties with temperature-dependent photoluminescence (PL) measurements. Single 4H-SiC crystals were fabricated using three different 3C-SiC starting materials and the physical vapor transport method at a high temperature and 100 Pa in an argon atmosphere. The correlation between the impurity levels and the optical and fluorescent properties was confirmed using Raman spectroscopy, X-ray diffraction, inductively coupled plasma atomic emission spectroscopy (ICP-OES), UV-Vis-NIR spectrophotometry, and PL measurements. The PL intensity was observed in all three single 4H-SiC crystals, with the highest intensities at low temperatures. Two prominent PL emission peaks at 420 and 580 nm were observed at temperatures below 50 K. These emission peaks originated from the impurity concentration due to the incorporation of N, Al, and B in the single 4H-SiC crystals and were supported by ICP-OES. The emission peaks at 420 and 580 nm occurred due to donor–acceptor-pair recombination through the incorporated concentrations of nitrogen, boron, and aluminum in the single 4H-SiC crystals. The results of the present work provide evidence based on the low-temperature PL that the mechanism of PL emission in single 4H-SiC crystals is mainly related to the transitions due to defect concentration.

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Quality evaluation of homopetaxial 4H-SiC thin films by a Raman scattering study of forbidden modes

Cited by 14 publications

References 23 publications

Photoluminescence line shapes for color centers in silicon carbide from density functional theory calculations

Photoluminescence line shapes for color centers in silicon carbide from density functional theory calculations

Photoluminescence Lineshapes for Color Centers in Silicon Carbide from Density Functional Theory Calculations

Defect-Induced Luminescence Quenching of 4H-SiC Single Crystal Grown by PVT Method through a Control of Incorporated Impurity Concentration

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