Qualitative Analysis of Dual Material Gate (SiO2/HfO2) Underlapped on Drain Side TFET (DMGUD-TFET) Using Work Function Engineering

Tallapaneni, Naga Swathi; Megala, V.

doi:10.1007/s12633-022-01890-6

Cited by 6 publications

(2 citation statements)

References 23 publications

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“…HfO 2 is a high ‘k’ dielectric which is used as gate oxide and SiO 2 with low-k is used as spacer oxide. As it could be noted from the literature, a combination of low and high ‘k’ dielectric material above the substrate helps in improving DC characteristics like higher ON current (I ON ) and a lower leakage current 48 , 49 . The devices used in the study are represented as Si/Material which means Silicon is used in the drain and channel region whereas hetero materials are used in the source region.…”

Section: Device Description and Simulation Methodologymentioning

confidence: 99%

TCAD simulation study of heavy ion radiation effects on hetero junctionless tunnel field effect transistor

Aishwarya,

Lakshmi

2024

Sci Rep

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Semiconductor devices used in radiation environment are more prone to degradation in device performance. Junctionless Tunnel Field Effect Transistor (JLTFET) is one of the most potential candidates which overcomes the short channel effects and fabrication difficulties. In this work, 20 nm JLTFET is proposed with Silicon in the drain/channel region whereas source uses different materials, Silicon Germanium (SiGe), Gallium Nitride (GaN), Gallium Arsenide (GaAs), Indium Arsenide (InAs). The device performance is examined by subjecting it to heavy ion radiation at a lower and higher dose of linear energy transfer (LET) values. It can be seen that the most sensitive location is the source/channel (S/C) interface for SiGe, GaN and GaAs whereas the drain/channel (D/C) interface for InAs. Further analysis is carried out at these vulnerable regions by matching ION of all materials. The parameters, transient peak current (Ipeak), collected charge (QC), threshold voltage shift (ΔVth) and bipolar gain (β) are extracted using transient simulations. It is observed that for a lower dose of LET, Ipeak of SiGe is 27% lesser than InAs and for higher dose of LET, SiGe shows 56% lesser Ipeak than InAs. SiGe is less sensitive at lower and higher dose of LET due to reduced ΔVth, tunneling and electron density.

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Section: Device Description and Simulation Methodologymentioning

confidence: 99%

TCAD simulation study of heavy ion radiation effects on hetero junctionless tunnel field effect transistor

Aishwarya,

Lakshmi

2024

Sci Rep

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show abstract

“…We noticed a higher on-current (Ion) in the HD-DMG-US TFET, primarily attributed to reduced tunneling barriers at the junction, improved subthreshold slope, and a higher Ion/Ioff ratio. These characteristics make the HD-DMG-US TFET structure well-suited for low-power applications [26]. Cavity formation expands as the barrier width between the valence and conduction bands increases, indicating reduced electron tunneling.…”

Section: Drain Current Characteristicsmentioning

confidence: 99%

Design and Analysis of Hetero Dielectric Dual Material Gate Underlap Spacer Tunnel Field Effect Transistor

Howldar,

Balaji,

Srinivasa Rao

2023

IJE

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Performance evaluation of GPVs in existing TFET and proposed DG-JL-TFET: enhancing the RF performance through qualitative and quantitative approaches

Raja,

Sekhar

2024

Appl. Phys. A

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Qualitative Analysis of Dual Material Gate (SiO2/HfO2) Underlapped on Drain Side TFET (DMGUD-TFET) Using Work Function Engineering

Cited by 6 publications

References 23 publications

TCAD simulation study of heavy ion radiation effects on hetero junctionless tunnel field effect transistor

TCAD simulation study of heavy ion radiation effects on hetero junctionless tunnel field effect transistor

Design and Analysis of Hetero Dielectric Dual Material Gate Underlap Spacer Tunnel Field Effect Transistor

Performance evaluation of GPVs in existing TFET and proposed DG-JL-TFET: enhancing the RF performance through qualitative and quantitative approaches

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