2014
DOI: 10.1016/j.solmat.2013.06.012
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Qualification of encapsulation materials for module-level-processing

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Cited by 17 publications
(12 citation statements)
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“…The wafers are manually bonded on the glass and the wafer/silicone/glass stack is cured at a temperature of 200 • C for 1 h in a vacuum. This additional curing is performed to avoid silicone contamination of the plasma chamber during PECVD deposition [9], [21]. The samples are then left in the vacuum overnight in order to remove air bubbles that are created during the manual bonding.…”
Section: Device Processmentioning
confidence: 99%
“…The wafers are manually bonded on the glass and the wafer/silicone/glass stack is cured at a temperature of 200 • C for 1 h in a vacuum. This additional curing is performed to avoid silicone contamination of the plasma chamber during PECVD deposition [9], [21]. The samples are then left in the vacuum overnight in order to remove air bubbles that are created during the manual bonding.…”
Section: Device Processmentioning
confidence: 99%
“…The residual porous silicon belonging to the annealed LP-TL must be removed using a silicon etchant that does not react strongly with the silicone. Moreover, silicone should not be directly exposed to the plasma during amorphous silicon deposition, because it will lead to very poor surface passivation [15][16][17]. In order to minimize the problems associated with silicone, a shielded configuration (i.e.…”
Section: Experimental Methodsmentioning
confidence: 99%
“…Both components are more robust to the front side processing steps that are carried out after bonding the bilayer to the rear substrate than a plastic backsheet and other encapsulation materials like ethylene-vinyl acetate (EVA). 50 We estimate the costs of the silicone encapsulant to be 20 $/kg, which results in layer costs per area of 27% compared to an EVA layer. The front side is encapsulated with a single EVA sheet and high-quality glass with anti-reflective coating.…”
Section: Cost Estimationmentioning
confidence: 99%