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Hou, Kewei; Mo, Haitao; Chen, Xue; Zhang, Lu

doi:10.3386/w24709

Cited by 38 publications

(38 citation statements)

References 51 publications

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“…At such an interface, the film of magnetic material, that does not show vdW bonding intrinsically, turns out to be vdW-coupled to a TI as a result of immersion below the surface of the latter. Incidentally, the axion insulator state could also be achieved in such heterostructures [19]. These and other AFM systems appear to be interesting candidates to couple the emerging fields of AFM spintronics [20] and layered vdW materials [7,8].Here, using state-of-the-art ab initio techniques and arXiv:1810.05289v1 [cond-mat.mtrl-sci]…”

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confidence: 99%

Unique Thickness-Dependent Properties of the van der Waals Interlayer Antiferromagnet MnBi2Te4 Films

et al. 2019

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Using density functional theory and Monte Carlo calculations, we study the thickness dependence of the magnetic and electronic properties of a van der Waals interlayer antiferromagnet in the twodimensional limit. Considering MnBi2Te4 as a model material, we find it to demonstrate a remarkable set of thickness-dependent magnetic and topological transitions. While a single septuple layer block of MnBi2Te4 is a topologically trivial ferromagnet, the thicker films made of an odd (even) number of blocks are uncompensated (compensated) interlayer antiferromagnets, which show wide bandgap quantum anomalous Hall (zero plateau quantum anomalous Hall) states. Thus, MnBi2Te4 is the first stoichiometric material predicted to realize the zero plateau quantum anomalous Hall state intrinsically. This state has been theoretically shown to host the exotic axion insulator phase.After the isolation of graphene, the field of twodimensional (2D) van der Waals (vdW) materials has experienced an explosive growth and new families of 2D systems and block-layered bulk materials, such as tetradymite-like topological insulators (TIs) [1, 2], transition metal dichalcogenides [3], and others [4-6] have been discovered. The remarkable electronic properties, along with the possibility of their tuning via thickness control, doping, intercalation, proximity effects, etc., make the layered vdW materials attractive from both practical and fundamental points of view. The relative simplicity of fabrication with a number of techniques has greatly facilitated a comprehensive study of these systems. However, the important step towards magnetic functionalization of the inherently nonmagnetic layered vdW materials and a controllable fabrication of the resulting hybrid systems has proven challenging. Therefore, aiming at exploring magnetism of layered vdW materials in the 2D limit, new possibilities have been considered. One of them is the ultrathin laminae exfoliation from intrinsically ferromagnetic (FM) vdW crystals, such as Cr 2 Ge 2 Te 6 and CrI 3 , whose magnetic behaviour has been studied down to a few layers thickness [7,8]. An alternative fabrication strategy is epitaxial growth [9,10]. With this technique, a 2D FM septuple layer (SL) block of MnBi 2 Se 4 has been grown on top of the Bi 2 Se 3 TI surface [9]. Similar systems have been theoretically proposed as a promising platform for achieving the quantized anomalous Hall (QAH) and magnetoelectric effects at elevated temperatures [11,12]. Later, epitaxial growth of the Bi 2 Se 3 /MnBi 2 Se 4 multilayer heterostructure has been reported [10].The field of 2D vdW magnets is in its infancy and many more materials with new properties are to be explored. In particular, vdW antiferromagnets are expected to be of great interest. Indeed, recently it has been reported that the layered vdW compound MnBi 2 Te 4 is the first ever antiferromagnetic (AFM) TI [13]. This state of matter is predicted to give rise to exotic phenomena such as quantized magnetoelectric effect [14], axion electrodynamics [15], and Maj...

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Unique Thickness-Dependent Properties of the van der Waals Interlayer Antiferromagnet MnBi2Te4 Films

et al. 2019

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“…This value is much larger than the 0.003 µB of Se atom in Bi 2 Se 3 /CrI 3 . [45] In order to determine the magnetic ground state and evaluate magnetic stability of CrX 3 , we calculate the exchange energy ∆E of CrX 3 in heterostructure, ∆E=E AFM -E F M . The results are listed in Table 1 and Figure 3(d).…”

Section: Resultsmentioning

confidence: 99%

The enhanced ferromagnetism of single-layer CrX₃ (X = Br and I) via van der Waals engineering

Kang

et al. 2019

Phys. Chem. Chem. Phys.

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The recent experimental discovery of intrinsic ferromagnetism in single-layer CrI 3 opens a new avenue to low-dimensional spintronics. However, the low Curie temperature Tc ∼ 45 K is still a large obstacle to its realistic device application. In this work, we demonstrate that the Tc and magnetic moment of CrX 3 (X=Br, I) can be enhanced simultaneously by coupling them to buckled two-dimensional Mene (M=Si, Ge) to form magnetic van der Waals (vdW) heterostructures. Our first-principles calculations reveal that n-doping of CrX 3 , induced by a significant spin-dependent interlayer charge-transfer from Mene, is responsible for its drastic enhancement of Tc and magnetic moment. Furthermore, the diversified electronic properties including halfmetallicity and semi-conductivity with configuration-dependent energy gap are also predicted in this novel vdW heterostructure, implying their broad potential applications in spintronics. Our study suggests that the vdW engineering may be an efficient way to tune the magnetic properties of 2D magnets, and the Mene/CrX 3 magnetic vdW heterostructures are wonderful candidates in spintronics and nanoelectronics device

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“…In general, AV is easy to program and apply, although it has the disadvantage that its coefficient γ is difficult to estimate, being necessary to apply a trial/error procedure in order to determine its most suitable value. AV, independently of its shape, is an indispensable tool to suppress numerical oscillations (Hou et al, 2012) generated by high-order numerical schemes.…”

Section: Artificial Viscositymentioning

confidence: 99%

Transient flow analysis using the method of characteristics MOC with five-point interpolation scheme

Twyman

2018

Obras y Proyectos

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Análisis del flujo transiente usando el método de las características con esquema de interpolación de cinco puntos Fecha de entrega: 25 de agosto 2017 Fecha de aceptación: 21 de agosto 2018An original 2 nd -order Method of Characteristics (MOC) which it works with a five-point interpolating scheme valid for solving the hyperbolic and quasilinear partial differential equations that describe the transient flow phenomenon in pipelines is shown. The results obtained by both MOC 2 nd -order and exact solution (MOC 1 st -order) are compared. It is shown that MOC 2 nd -order allows obtain near-to-exact results within a wide range of Courant numbers. Keywords: artificial viscosity, Courant number, method of characteristics 2 nd -order, water hammerSe muestra una versión original del Método de las Características (MC) de 2 do orden que trabaja con un esquema de interpolación de cinco puntos, válido para resolver las ecuaciones diferenciales parciales hiperbólicas y cuasilineales que describen el fenómeno del flujo transiente en redes de tuberías. Se comparan los resultados obtenidos por el MC 2 do orden y la solución exacta (MC 1 er orden). Se demuestra que el MC 2 do orden permite obtener resultados cercanos a los exactos dentro de una amplia gama de números de Courant.Palabras clave: viscosidad artificial, número de Courant, método de las características 2 do orden, golpe de ariete

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q⁵

Cited by 38 publications

References 51 publications

Unique Thickness-Dependent Properties of the van der Waals Interlayer Antiferromagnet MnBi2Te4 Films

Unique Thickness-Dependent Properties of the van der Waals Interlayer Antiferromagnet MnBi2Te4 Films

The enhanced ferromagnetism of single-layer CrX₃ (X = Br and I) via van der Waals engineering

Transient flow analysis using the method of characteristics MOC with five-point interpolation scheme

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q⁵

Cited by 38 publications

References 51 publications

Unique Thickness-Dependent Properties of the van der Waals Interlayer Antiferromagnet MnBi2Te4 Films

Unique Thickness-Dependent Properties of the van der Waals Interlayer Antiferromagnet MnBi2Te4 Films

The enhanced ferromagnetism of single-layer CrX3 (X = Br and I) via van der Waals engineering

Transient flow analysis using the method of characteristics MOC with five-point interpolation scheme

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The enhanced ferromagnetism of single-layer CrX₃ (X = Br and I) via van der Waals engineering