Q-switched Nd lasers pumped directly into the 4F3/2 emitting level

Pavel, N.; Dascalu, T.; Salamu, Gabriela; Sandu, O.; Leca, Aurel; Lupeǐ, V.

doi:10.1016/j.optcom.2009.08.067

Cited by 16 publications

(5 citation statements)

References 26 publications

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“…The main features of the effects of λ p on the Q-switched emission reported in this work for Nd:GSGG are similar to those reported for laser materials with higher emission cross-sections, such as Nd:YAG or Nd:YVO 4 [30]. Although the laser performances reported in this work are influenced by utilization of uncoated laser material, this would not modify the basic features of the effect of λ p on the laser emission and the conclusion inferred from the data reported here from a comparison of the 883 and 807 nm pumping.…”

Section: Laser Emission Under Direct Pumping Discussionsupporting

confidence: 86%

Improved laser efficiency by direct diode laser pumping of the radiation-resistant Nd:gadolinium–scandium–gallium garnet

Lupeǐ¹,

Pavel²,

Lupeǐ³

2014

Laser Phys.

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Spectroscopic investigation of the radiation-resistant Nd:GSGG crystals and ceramics reported in this paper evidences that the absorption line at 883 nm corresponding to the unusual situation of quasi-degenerate absorption transitions 4 I 9/2 (2) → 4 F 3/2 (1) and 4 I 9/2 (3) → 4 F 3/2 (2) can be used for efficient direct diode laser pumping of this material, with stable absorption over an extended temperature range. It is inferred that the reduction of the quantum defect at this wavelength of pump compared to the traditional 807 nm pumping could improve the laser parameters and reduce drastically the heat generation, leading to a considerable extension of the power scalability. This possibility is demonstrated for the first time in the case of the 1061 nm laser emission in a continuous-wave and in the repetitive active acousto-optic and passive Q-switched laser emission. In all regimes this manifests in the reduction of the laser threshold, increase of slope efficiency and extension of the average power range. Additionally, in the active Q-switching this enables increased pulse energy and reduced pulse duration. The direct pumping could revitalize the utilization of Nd:GSGG for construction of lasers with storage of population inversion or working in an ionizing radiation environment.

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Section: Laser Emission Under Direct Pumping Discussionsupporting

confidence: 86%

Improved laser efficiency by direct diode laser pumping of the radiation-resistant Nd:gadolinium–scandium–gallium garnet

Lupeǐ¹,

Pavel²,

Lupeǐ³

2014

Laser Phys.

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“…One of the proposed solutions to effectively alleviate this problem was based on the reduction of heating within the laser crystal. This was achieved by pumping the laser at longer wavelengths (such as 880 nm, 888 nm, and 912 nm) [20,[24][25][26][27][28][29][30][31][32][33][34][35] instead of the standard pumping at 808 nm. The observed decrease in thermal lensing effect was mainly attributed to the reduction of quantum defect (energy difference between the absorbed pump and laser output photons).…”

Section: Introductionmentioning

confidence: 99%

Passively mode-locked high power Nd:GdVO₄laser with direct in-band pumping at 912 nm

2017

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We report on the first semiconductor saturable absorber mirror mode-locked Nd:GdVO 4 laser directly diode-pumped at 912 nm. The laser generated 10.14 W of averaged output power at 1063 nm with the pulse width of 16 ps at the repetition rate of 85.2 MHz. The optical-tooptical efficiency and slope efficiency in the mode-locked regime were calculated to be 49.6% and 67.4% with respect to the absorbed pump power, respectively. Due to the low quantum defect pumping the output power was limited only by the available pump power.

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“…Though impressive results have been obtained with traditional 808 nm pump scheme [3,4], better performance will be continually anticipated through improving pump scheme. Direct pumping scheme with 885 nm laser is a more reliable and attractive method for the generation of the fundamental wave, which has been proved in diode-end-pumped Nd lasers [15,16]. Pumping from thermally excited Stark levels in the ground-state to the upper lasing level directly, can reduce the Stokes factor loss to a minimum and eliminate the quantum efficiency loss.…”

Section: Introductionmentioning

confidence: 99%

16.7 W 885 nm diode-side-pumped activelyQ-switched Nd:YAG/YVO₄intracavity Raman laser at 1176 nm

Jiang

Zhang

Liu

et al. 2017

J. Phys. D: Appl. Phys.

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We proposed and experimentally demonstrated the generation of high-power 1176 nm Stokes wave by frequency shifting of a 885 nm diode-side-pumped Nd:YAG laser using a YVO 4 crystal in a Z-shaped cavity configuration. Employing the 885 nm diode-side-pumped scheme and the Z-shaped cavity, for the first time to our knowledge, we realized the thermal management effectively, achieving excellent 1176 nm Stokes wave consequently. With an incident pump power of ~190.0 W, a maximum average output power of 16.7 W was obtained at the pulse repetition frequency of 10 kHz. The pulse duration and spectrum linewidth of the Stokes wave at the maximum output power were 20.3 ns and ~0.08 nm, respectively.

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Q-switched Nd lasers pumped directly into the 4F3/2 emitting level

Cited by 16 publications

References 26 publications

Improved laser efficiency by direct diode laser pumping of the radiation-resistant Nd:gadolinium–scandium–gallium garnet

Improved laser efficiency by direct diode laser pumping of the radiation-resistant Nd:gadolinium–scandium–gallium garnet

Passively mode-locked high power Nd:GdVO₄laser with direct in-band pumping at 912 nm

16.7 W 885 nm diode-side-pumped activelyQ-switched Nd:YAG/YVO₄intracavity Raman laser at 1176 nm

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Q-switched Nd lasers pumped directly into the 4F3/2 emitting level

Cited by 16 publications

References 26 publications

Improved laser efficiency by direct diode laser pumping of the radiation-resistant Nd:gadolinium–scandium–gallium garnet

Improved laser efficiency by direct diode laser pumping of the radiation-resistant Nd:gadolinium–scandium–gallium garnet

Passively mode-locked high power Nd:GdVO4laser with direct in-band pumping at 912 nm

16.7 W 885 nm diode-side-pumped activelyQ-switched Nd:YAG/YVO4intracavity Raman laser at 1176 nm

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Passively mode-locked high power Nd:GdVO₄laser with direct in-band pumping at 912 nm

16.7 W 885 nm diode-side-pumped activelyQ-switched Nd:YAG/YVO₄intracavity Raman laser at 1176 nm