Q-Factor Performance of 28 nm-Node High-K Gate Dielectric under DPN Treatment at Different Annealing Temperatures

Chen, Chii-Wen; Wang, Shea–Jue; Hsieh, Wu‐Chiao; Chen, Jianming; Jong, Te; Lan, Wen−How; Wang, Mu‐Chun

doi:10.3390/electronics9122086

Cited by 14 publications

(6 citation statements)

References 36 publications

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“…The non-linear solution of Equation ( 5) is expressed as The speed of the electron, closely associated with current density (J=nev), is proportional to the derivative of the wave function with respect to ξ. (7) Therefore, the fine variations of IDS in Figure 3a are to be easier modified by using the above Gaussian form, followed by Figure 3b with less minimum delta. The final fitting curves are then as shown in Figure 3c.…”

Section: The Kink Effectmentioning

confidence: 99%

“…Nevertheless, ones are still intrigued to know if the "modified" conventional formula is applicable for fitting repeated characteristic curves. [1][2][3][4][5][6][7][8][9][10][11][12][13][14] In the model, useful parameters are supposed to be constants even though they need interpreting. Some evidences in this paper do show some limitation.…”

Section: Introductionmentioning

confidence: 99%

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A Conclusive Model-Fit Current-Voltage Characteristics Curves with Kink Effects

Yang¹,

Chi²

2023

Preprint

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Current-voltage characteristics curves of NFinFET are presented and are fitted with the modi-fied current-voltage (I-V) formulas, where the modified term in the triode region is demon-strated to be indispensable. In the as-known I-V formula, important parameters need determin-ing to make both the measured data and the fitting data as close as possible. Those parameters include kN (associated with the sizes of the transistor and mobility), (associated with Early Voltage), and Vth (the threshold voltage). The differences between the measured data and the fit-ting data vary as the applied source-drain bias, proving that the mobility of the carriers is not consistently constant. On the other hand, a modified formula, called kink effect factor, is nega-tively or positively added simulating solitary heat waves, which disturb the propagation of car-riers and thus influence the Source-Drain current (IDS). The new statistical standard deviations () are then found to be effectively suppressed as the kink effect is taken into account.

show abstract

Section: The Kink Effectmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A Conclusive Model-Fit Current-Voltage Characteristics Curves with Kink Effects

Yang¹,

Chi²

2023

Preprint

View full text Add to dashboard Cite

show abstract

“…The achievable function of the process is mostly due to the good conformality (step coverage) of chemical vapor deposition, in which SiH4 (silane) is controlled at a chosen flow rate and the ambient is sustained at an appropriate temperature and at certain pressure to achieve a good deposition rate in kinetic regime. [7][8][9][10][11][12][13][14][15] Somehow, the electrical performances of transistors are mainly manifested in current-versusvoltage characteristic curves. Those curves are necessarily parameter-extracted in the model, which is useful to develop circuit design.…”

Section: Introductionmentioning

confidence: 99%

Conclusive Algorithm with Kink Effects for Fitting 3-D FinFET and Planar MOSFET Characteristic Curves

Yang,

Chi,

Yang

et al. 2024

Preprint

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NFinFET transistors with fin channel length 90nm and a planar MOSFET transistor with channel length 180nm and 90nm are presented with characteristic curves at various gate biases. A finalized algorithm with kink effects is effectively responsible for addressing the field effect transistors. The algorithm includes the modified conventional current-voltage formula and a nonlinear heat-associated kink solution which is simplified as a Gaussian form. Three parameters in modified model includes kN (related with channel width, channel length, and gate oxide capacitor, and proportional to the mobility of carriers)Vth(Threshold Voltage), and (the inverse of Early Voltage). Those parameters are determined to minimize the discrepancies between the measured data and the fitting values, but leave kinks located at around (VGS－Vth), which are deliberately eliminated by the Gaussian form because of the agitation of thermal kink effects. The whole fitting is made to be as close as the as-measured IDS-VDS. In the mean time, those determined parameters are physically meaningful after the analysis has been done.

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“…Therefore, current-versus-voltage characteristic curves showing the electrical performances of transistors are necessarily parameter-extracted in the model. Nevertheless, researchers are still intrigued to know if the "modified" conventional formula is applicable for fitting repeated characteristic curves [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. Useful parameters are supposed to be constants in the model, even though they need interpreting.…”

Section: Introductionmentioning

confidence: 99%

Conclusive Model-Fit Current–Voltage Characteristic Curves with Kink Effects

Yang,

Chi

2023

Applied Sciences

View full text Add to dashboard Cite

Current–voltage characteristic curves of NFinFET are presented and fitted with modified current–voltage (I-V) formulas, where the modified term in the triode region is demonstrated to be indispensable. In the as-known I-V formula, important parameters need to be determined to make both the measured data and the fitting data as close as possible. These parameters include kN (associated with the sizes of the transistor and mobility), λ (associated with early voltage), and Vth (the threshold voltage). The differences between the measured data and the fitting data vary with the applied source–drain bias, proving that the mobility of the carriers is not consistently constant. On the other hand, a modified formula, called the kink effect factor, is negatively or positively added, simulating solitary heat waves or lattice vibration, which disturb the propagation of carriers and thus influence the source–drain current (IDS). The new statistical standard deviations (δ) are then found to be effectively suppressed as the kink effect is taken into account.

show abstract

Q-Factor Performance of 28 nm-Node High-K Gate Dielectric under DPN Treatment at Different Annealing Temperatures

Cited by 14 publications

References 36 publications

A Conclusive Model-Fit Current-Voltage Characteristics Curves with Kink Effects

A Conclusive Model-Fit Current-Voltage Characteristics Curves with Kink Effects

Conclusive Algorithm with Kink Effects for Fitting 3-D FinFET and Planar MOSFET Characteristic Curves

Conclusive Model-Fit Current–Voltage Characteristic Curves with Kink Effects

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