Pyrometry for Laser Annealing

Adams, B.; Mayur, A. J.; Hunter, Aaron; Ramanujam, R.

doi:10.1109/rtp.2005.1613690

Cited by 9 publications

(3 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…An experimental quantification of the thermal field induced by the irradiation into the sample is not an easy task, as the measurements of a fast varying thermal field are questionable 7 or not fully explained. 6 Therefore, to obtain effective and reproducible processing, we have followed a theoretical approach, based on simulating the thermal field T͑r,t͒ evolution during the laser scanning process.…”

Section: Resultsmentioning

confidence: 99%

Boron Electrical Activation in Crystalline Si after Millisecond Nonmelting Laser Irradiation

Mannino

Magna

Christensen

et al. 2008

J. Electrochem. Soc.

View full text Add to dashboard Cite

We investigated boron ͑B͒ activation and diffusion in Si following millisecond annealing in the nonmelting regime by infrared laser. Simulations of the thermal field were also performed to calculate the process temperature. The laser annealed ͑LA͒ samples show an electrical activation higher by a factor of 2 as compared to rapid thermal annealed ͑RTA͒ samples, for comparable diffusion. When LA samples are further processed by RTA, the final diffusion extent is almost identical to an RTA treated sample, while electrical activation occurs. We argue that B atoms can temporarily occupy substitutional sites during the early stage of annealing; further annealing leads to interstitial clustering and dissolution, which enhance dopant diffusion during rapid thermal processing.

show abstract

Section: Resultsmentioning

confidence: 99%

Boron Electrical Activation in Crystalline Si after Millisecond Nonmelting Laser Irradiation

Mannino

Magna

Christensen

et al. 2008

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

“…Dynamic non-uniformity effects become dominant when very high power heat sources are employed. For example, the recent renaissance in millisecond annealing, where τ is < ~10 ms, has required the use of high-power pulses of energy for selective surface heating that is followed by rapid conductive cooling to the bulk of the wafer [54][55][56][57][58][59][60][61][62][63][64]. Fig.…”

Section: Rapid Thermal Processing and Beyond: Applications In Semicon...mentioning

confidence: 99%

“…Such solutions are especially popular for laser processing, where the single-wavelength heating can make pattern effects extremely severe. Coatings can be employed in various ways, including schemes based on reflective films [1], anti-reflection layers [13,73] and absorbing layers [60]. Antireflection and absorbing coatings have also been used with flash-lamp heating [61,62].…”

Section: Practical Paths For Handling Pattern Effects In Volume Produ...mentioning

confidence: 99%

A Short History of Pattern Effects in Thermal Processing

Timans

2008

MSF

View full text Add to dashboard Cite

Radiant energy sources enable rapid and controllable thermal processing of wafers with closed-loop control of wafer temperature. However the use of energy sources that are not in thermal equilibrium with the wafers makes the heating process sensitive to the optical properties of the wafers. In particular, patterns on wafer surfaces can cause temperature non-uniformity at length scales where lateral thermal conduction cannot smooth out the effect. Such “pattern effects” are even more significant for advanced processing techniques like millisecond annealing and pulsed laser annealing, because of the extremely large heating powers employed. The issue of pattern effects was recognized early on in the development of radiant heating technology, but has recently become a critical issue for process control. Despite the challenges, many counter-measures can be deployed to minimize pattern effects, including modifications to the wafer design, changes in processing recipe and equipment configuration. Such solutions have enabled the use of radiant heating for even the most demanding device fabrication applications.

show abstract