Pyroelectric effect of a p–n junction in a nonpolar solid

Sandomirsky, V.; Schlesinger, Y.; Dashevsky, Z.

doi:10.1063/1.1896101

Cited by 8 publications

(12 citation statements)

References 7 publications

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“…Morozovska et al [ 20 ] proposed that the rectification effect of the junction barrier allows the application of a ferroelectric nanowire array fixed between flat electrodes as the direct current generator. Moreover, one should remember that the built-in electrical field of a p – n junction barrier can create a polar axis in the solid [ 86 ]. The pyroelectric effect can be enhanced, as the electric dipole moment, due to the charge separation at the junction, depending on the temperature mainly through the temperature dependence of the dielectric constant [ 86 ].…”

Section: Resultsmentioning

confidence: 99%

“…Moreover, one should remember that the built-in electrical field of a p – n junction barrier can create a polar axis in the solid [ 86 ]. The pyroelectric effect can be enhanced, as the electric dipole moment, due to the charge separation at the junction, depending on the temperature mainly through the temperature dependence of the dielectric constant [ 86 ].…”

Section: Resultsmentioning

confidence: 99%

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Pyroelectric Nanogenerator Based on an SbSI–TiO2 Nanocomposite

Mistewicz

2021

Sensors

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For the first time, a composite of ferroelectric antimony sulfoiodide (SbSI) nanowires and non-ferroelectric titanium dioxide (TiO2) nanoparticles was applied as a pyroelectric nanogenerator. SbSI nanowires were fabricated under ultrasonic treatment. Sonochemical synthesis was performed in the presence of TiO2 nanoparticles. The mean lateral dimension da = 68(2) nm and the length La = 2.52(7) µm of the SbSI nanowires were determined. TiO2 nanoparticles served as binders in the synthesized nanocomposite, which allowed for the preparation of dense films via the simple drop-casting method. The SbSI–TiO2 nanocomposite film was sandwiched between gold and indium tin oxide (ITO) electrodes. The Curie temperature of TC = 294(2) K was evaluated and confirmed to be consistent with the data reported in the literature for ferroelectric SbSI. The SbSI–TiO2 device was subjected to periodic thermal fluctuations. The measured pyroelectric signals were highly correlated with the temperature change waveforms. The magnitude of the pyroelectric current was found to be a linear function of the temperature change rate. The high value of the pyroelectric coefficient p = 264(7) nC/(cm2·K) was determined for the SbSI–TiO2 nanocomposite. When the rate of temperature change was equal dT/dt = 62.5 mK/s, the maximum and average surface power densities of the SbSI–TiO2 nanogenerator reached 8.39(2) and 2.57(2) µW/m2, respectively.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Pyroelectric Nanogenerator Based on an SbSI–TiO2 Nanocomposite

Mistewicz

2021

Sensors

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“…According to Eq. (4.1), the value of Λ varies with doping (via V 0 ), with the dopant concentration gradient (via C), with ε (T) (via C), as well as with the bias and the temperature 1,3,4,9,10 .…”

Section: Theorymentioning

confidence: 99%

Experimental and theoretical investigation of the pyroelectric effect of the p–n junction in a paraelectric non-polar semiconductor

Бутенко¹,

Sandomirsky²,

Kahatabi³

et al. 2012

Physica B: Condensed Matter

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“…We predicted recently [1,2], on theoretical grounds, the existence of a pyroelectric effect in barrier structures of quantum paraelectrics (junction barrier pyroelectricity, JBP). The idea rests in the fact that the macroscopic dipole moment, due to the charge separation in the p-n junction region, depends on temperature via its dependence on the dielectric constant.…”

Section: Introductionmentioning

confidence: 99%

“…The dielectric constant, in quantum paraelectrics (e.g., PbTe or SrTiO 3 ) [3], varies strongly with temperature, giving rise to a pyroelectric response. We calculated the magnitude of this effect for the quantum paraelectrics PbTe and SrTiO 3 [1,2].…”

Section: Introductionmentioning

confidence: 99%

Characterization of high-temperature PbTe p-n junctions prepared by thermal diffusion and by ion implantation

Бутенко

Kahatabi

Mogilko

et al. 2008

Journal of Applied Physics

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We describe here the characteristics of two types of high-quality PbTe p-njunctions, prepared in this work: (1) by thermal diffusion of In 4 Te 3 gas (TDJ), and (2) by ion implantation (implanted junction, IJ) of In (In-IJ) and Zn (Zn-IJ).The results, as presented here, demonstrate the high quality of these PbTe diodes.Capacitance-voltage (C-V) and current-voltage (I-V) characteristics have been measured.The measurements were carried out over a temperature range from ~ 10 K to ~ 180 K.The latter was the highest temperature, where the diode still demonstrated rectifying properties. This maximum operating temperature is higher than any of the earlier reported results.The saturation current density, J 0 , in both diode types, was ~ 10 -5 A/cm 2 at 80 K, while at 180 K J 0 ∼ 10 -1 A/cm 2 in TDJ and ~ 1 A/cm 2 in both ion-implanted junctions. At 80 K the reverse current started to increase markedly at a bias of ~ 400 mV for TDJ, and at ∼ 550 mV for IJ. The ideality factor n was about 1.5 -2 for both diode types at 80 K. 2The analysis of the C-V plots shows that the junctions in both diode types are linearly graded. The analysis of the C-V plots allows also determining the height of the junction barrier, the concentrations and the concentration gradient of the impurities, and the temperature dependence of the static dielectric constant.The zero-bias-resistance×area products (R 0 A e ) at 80 K are: 850 Ω⋅cm 2 for TDJ,

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Pyroelectric effect of a p–n junction in a nonpolar solid

Cited by 8 publications

References 7 publications

Pyroelectric Nanogenerator Based on an SbSI–TiO2 Nanocomposite

Pyroelectric Nanogenerator Based on an SbSI–TiO2 Nanocomposite

Experimental and theoretical investigation of the pyroelectric effect of the p–n junction in a paraelectric non-polar semiconductor

Characterization of high-temperature PbTe p-n junctions prepared by thermal diffusion and by ion implantation

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