Putting High-Index Cu on the Map for High-Yield, Dry-Transferred CVD Graphene

Abstract

Reliable, clean transfer and interfacing of 2D material layers are technologically as important as their growth.Bringing both together remains a challenge due to the vast, interconnected parameter space. We introduce a fast-screening descriptor approach to demonstrate holistic data-driven optimization across the entirety of process steps for the graphene−Cu model system. We map the crystallographic dependences of graphene chemical vapor deposition, interfacial Cu oxidation to decouple graphene, and its dry delamination across inverse pole figures. Their overlay enables us to identify hitherto unexplored (168) higher index Cu orientations as overall optimal orientations. We show the effective preparation of such Cu orientations via epitaxial close-space sublimation and achieve mechanical transfer with a very high yield (>95%) and quality of graphene domains, with room-temperature electron mobilities in the range of 40000 cm 2 /(V s). Our approach is readily adaptable to other descriptors and 2D material systems, and we discuss the opportunities of such a holistic optimization.

Synthesis of 2D Phosphorene: Current Status and Challenges

“…Over time, the CVD technology has proven its mettle in synthesizing numerous 2D nanomaterials, including transition metal dichalcogenides (TMDs) like MoS 2 , WS 2 , WSe 2 , hexagonal boron nitride (hBN), In 2 Se 3 , metal oxides, and graphene. [86][87][88] In sharp contrast to these materials, the chemical vapor deposition technology for producing black phosphorene remains relatively underdeveloped and immature.…”

An open-source robust machine learning platform for real-time detection and classification of 2D material flakes

“…These vdW heterostructures can range from monolayers encapsulated in hexagonal boron nitride (hBN) for improved electronic and optical properties and spatial homogeneity [2][3][4][5][6], to stacks containing up to ten layers, such as various semiconductors, graphitic gates, and hBN dielectrics and spacer layers [7][8][9]. Despite progress in the growth of 2D materials [10,11] and their subsequent fabrication of vdW heterostructures on a wafer scale [12,13], the exfoliation and mechanical stacking of 2D crystals remains the method of choice for basic research and proof-of-principle devices [14].…”