Pushing multiple patterning in sub-10nm

Pan, David Z.; Liebmann, Lars W.; Yu, Bei; Xu, Xiaoqing; Lin, Yibo

doi:10.1145/2744769.2747940

Cited by 31 publications

(26 citation statements)

References 47 publications

(67 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As the structures fabricated in the field of semiconductors has reached below 10 nm [1], and the pursuit of ever smaller node sizes continues, the impact of the surface roughness (SR) becomes increasingly critical [2]. In attempts to downscale the minimum feature size year-by-year in order to sustain Moore’s Law [3–4], new processing techniques [5] as well as materials [6] are constantly being explored.…”

Section: Introductionmentioning

confidence: 99%

Surface improvement of organic photoresists using a near-field-dependent etching method

Brandenburg

Okamoto

Saitô

et al. 2017

Beilstein J. Nanotechnol.

View full text Add to dashboard Cite

Surface flattening techniques are extremely important for the development of future electrical and/or optical devices because carrier-scattering losses due to surface roughness severely limit the performance of nanoscale devices. To address the problem, we have developed a near-field etching technique that provides selective etching of surface protrusions, resulting in an atomically flat surface. To achieve finer control, we examine the importance of the wavelength of the near-field etching laser. Using light sources at wavelengths of 325 and 405 nm, which are beyond the absorption edge of the photoresist (310 nm), we compare the resulting cross-sectional etching volumes. The volumes were larger when 325 nm light was employed, i.e., closer to the absorption edge. Although 405 nm light did not cause structural change in the photoresist, a higher reduction of the surface roughness was observed as compared to the 325 nm light. These results indicate that even wavelengths above 325 nm can cause surface roughness improvements without notably changing the structure of the photoresist.

show abstract

Section: Introductionmentioning

confidence: 99%

Surface improvement of organic photoresists using a near-field-dependent etching method

Brandenburg

Okamoto

Saitô

et al. 2017

Beilstein J. Nanotechnol.

View full text Add to dashboard Cite

show abstract

“…However, more and more masks will be required for finer process nodes, resulting in prohibitively expensive manufacturing cost and it requires much tighter overlay control than single patterning [4]. 193-nm immersion lithography (193i) has given influential boost to the further development of microelectronics, and the 22-and 14-nm nodes are currently manufactured with multi-patterning immersion ArF lithography [5]. However, this technique brings enormous process challenges like leaching, immersion defects and the filling methods of a purified medium.…”

Section: Introductionmentioning

confidence: 99%

Promising Lithography Techniques for Next-Generation Logic Devices

2018

View full text Add to dashboard Cite

Continuous rapid shrinking of feature size made the authorities to seek alternative patterning methods as the conventional photolithography comes with its intrinsic resolution limit. In this regard, some promising techniques have been proposed as next-generation lithography (NGL) that has the potentials to achieve both high-volume production and very high resolution. This article reviews the promising NGL techniques and introduces the challenges and a perspective on future directions of the NGL techniques. Extreme ultraviolet lithography (EUVL) is considered as the main candidate for sub-10-nm manufacturing, and it could potentially meet the current requirements of the industry. Remarkable progress in EUVL has been made and the tools will be available for commercial operation soon. Maskless lithography techniques are used for patterning in R&D, mask/mold fabrication and low-volume chip design. Directed self-assembly has already been realized in laboratory and further effort will be needed to make it as NGL solution. Nanoimprint lithography has emerged attractively due to its simple process steps, high throughput, high resolution and low cost and become one of the commercial platforms for nanofabrication. However, a number of challenging issues are waiting ahead, and further technological progresses are required to make the techniques significant and reliable to meet the current demand. Finally, a comparative study is presented among these techniques.

show abstract

“…However, more and more masks will be required for finer process nodes, resulting in prohibitively expensive manufacturing cost and it requires much tighter overlay control than single patterning [1]. 193nm immersion lithography (193i) has given influential boost to the further development of microelectronics and the 22-nm and 14-nm nodes are currently manufactured with multipatterning immersion ArF lithography [2]. However, this technique brings enormous process challenges like leaching, immersion defects and the filling methods of a purified medium.…”

Section: Introductionmentioning

confidence: 99%

Nanolithography: Status and challenges

Hasan

Luo

2017

2017 23rd International Conference on Automation and Computing (ICAC)

View full text Add to dashboard Cite

Abstract-With the help of immersion lithography and multiple patterning, photolithography has been the key technology over the last decade in manufacturing of ICs, microchips and MEMS devices. Continuous rapid shrinking of feature size made the authorities to seek alternative patterning methods that can go beyond classic photographic limits. Some promising techniques have been proposed as next generation lithography and further technological progress are required to make them significant and reliable to meet the current demand. EUVL is considered as the main candidate for sub-10 nm manufacturing because of its process simplicity and reduced operating cost. Remarkable progress in EUVL has been made and the tools will be available for commercial operation soon. EBL, FIB and Xray lithography are used for patterning in R&D, mask/mold fabrication and low volume chip design. DSA have already been realized in lab and further effort will be needed to make it as NGL solution. NIL has emerged attractively due to its simple process-steps, high-throughput, high-resolution and low cost and become one of the commercial platforms for nanofabrication.

show abstract

Pushing multiple patterning in sub-10nm

Cited by 31 publications

References 47 publications

Surface improvement of organic photoresists using a near-field-dependent etching method

Surface improvement of organic photoresists using a near-field-dependent etching method

Promising Lithography Techniques for Next-Generation Logic Devices

Nanolithography: Status and challenges

Contact Info

Product

Resources

About