Purification and growth of PbI/sub 2/ crystals: dependence of the radiation response on the PbI/sub 2/ crystal purity

Oliveira, I.B.; Costa, F.E.; Armelin, M. J. A.; Cardoso, L. P.; Hamada, M.M.

doi:10.1109/tns.2002.801483

Cited by 30 publications

(16 citation statements)

References 15 publications

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“…tions A small amount of about 150 mg of sample was taken from each slice (samples TOP, MIDDLE and BOTTON) to identify and determine the concentration of impurities. The impurity concentrations of the samples, taken from slices after each growth and BiI 3 powder were analyzed by the Instrumental Neutron Activation Analysis (INAA) technique (Oliveira, 2002). For this, BiI 3 aliquots ranging from 40 to 120 mg were transferred to polyethylene bags, which had been cleaned by leaching with a diluted HNO 3 (1:5) and purified water.…”

Section: Methodsmentioning

confidence: 99%

“…Several studies are found in the literature on high-Z compound semiconductors, such as CdTe, Cd1-xZnxTe (CzT), HgI 2 , PbI 2 and TlBr have been investigated as materials for nuclear radiation detectors that can operate at room temperature, since the early 80s Oliveira et al, 2004;Oliveira et al, 2002;.…”

Section: Introductionmentioning

confidence: 99%

“…Even though several studies on the preparation of room temperature semiconductor detectors and improvements in the methodology of purification, growth and characterization of the crystals have been carried out Oliveira et al, 2004;Oliveira et al, 2002;Matsumoto et al, 2002;Qiu, 2010, Gokhale et al 2014, Garg et al, 2014Gokhalea et al, 2015;Santos et al 2012), problems found in the room temperature semiconductor detectors are not yet completely resolved. Among them, the low collection efficiency of charge carriers and their stability, which are probably caused by impurities or defects created during the crystal growth.…”

Section: Introductionmentioning

confidence: 99%

“…Among them, the low collection efficiency of charge carriers and their stability, which are probably caused by impurities or defects created during the crystal growth. The semiconductor crystal purity is a crucial factor for its optimal performance as a radiation detector Oliveira et al, 2004;Oliveira et al, 2002;Matsumoto et al, 2002;Qiu, 2010, Gokhalea et al 2014). …”

Section: Introductionmentioning

confidence: 99%

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Purification and Crystal Growth of the Bismuth (III) Iodide-influence of Trace Impurities on the Crystal Quality

Ferraz¹,

Armelin²,

Oliveira³

et al. 2017

SET

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This work describes the experimental procedure of purification and preparation of BiI 3 crystals by Repeated Vertical Bridgman technique, aiming a future application of this semiconductor crystal as a room temperature radiation detector. The BiI 3 powder used as raw material was purified three times and, at each purification, the crystal was evaluated by systematic measurements of the reduction of the impurities, crystalline structure, stoichiometry and surface morphology. The reduction of the trace metal impurities in the BiI 3 , at each purification, was analyzed by Instrumental Neutron Activation Analysis (INAA), in order to evaluate the efficiency of the purification technique established in this work. It was demonstrated that the Repeated Bridgman technique is effective to reduce the concentration of many impurities in BiI 3 , such as Ag, As, Br, Cr, K, Mo, Na and Sb. The crystalline structure of the BiI 3 crystal purified twice and three times was similar to BiI 3 pattern. However, for BiI 3 powder and purified once, an intensity contribution of the BiOI was observed in the diffractograms. Improvement in the stoichiometric ratio was observed at each purification step, as well as the crystal surface morphology.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Purification and Crystal Growth of the Bismuth (III) Iodide-influence of Trace Impurities on the Crystal Quality

Ferraz¹,

Armelin²,

Oliveira³

et al. 2017

SET

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“…Most of semiconductor crystals, such as PbI 2 (405°C) (Oliveira, et al, 2002), TlBr (468°C) (Oliveira et al, 2004 and BiI 3 (408.6°C) are purified and grown by the fusion technique However, the HgI 2 undergoes structural phase transition below its melting point (259°C), what makes its growth by fusion technique more difficult (Zhou et al. 2003;Martins et al 2012).…”

Section: Introductionmentioning

confidence: 99%

Optimization of the HgI2 Crystal Preparation for Application as a Radiation Semiconductor Detector

Martins¹,

Santos²,

Ferraz³

et al. 2018

SET

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The effect of HgI 2 crystal encapsulation using different polymer resins, with the intent of avoiding the oxidation of the crystal surface, was evaluated in this work. The crystal was purified and grown by the physical vapor transport (PVT) technique modified. Systematic measurements were carried out for evaluating the stoichiometry, structure orientation, surface morphology and impurity of the crystal grown. The purer region of the crystal grown was selected to be prepared as a radiation detector, applying water-based conductive ink contacts and copper wire on the crystal surfaces. After that, the crystal was encapsulated with a polymeric resin which insulates atmospheric gases, aiming to improve the stability of the HgI 2 detector. Four resins were used for crystal encapslation and the performance of the detector depended on the composition of the resins used. Among the four resins studied to evaluate the influence of encapsulation on the performance of crystals, as a radiation detector, the best result of resistivity and energy spectrum was obtained for the resin #3 (50% -100% of Methylacetate and 5% -10% of n-butylacetate). The encapsulation of crystals with polymer resins, performed with the intent of avoiding the oxidation of the crystal surface, did not compromise the measurements and were fully capable of detecting the presence of gamma radiation. The stability of the encapsulated HgI2 crystal detector was of up to 78 hs, while the stability found for HgI 2 detector no encapsulated was in order 3 ~4 hs.

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Growth of ultra‐high purity PbI₂ single crystal: (1) Preparation of high purity PbI₂

Hayashi

Kinpara

Wang³

et al. 2007

Cryst. Res. Technol.

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In order to prepare high purity lead iodide (PbI 2 ) single crystals, the starting material-iodine (I) has been purified by the sublimation method, and the PbI 2 polycrystalline by the normal freezing method. The purification effect of these methods has been confirmed by evaluating the impurity concentration in ingot by glow discharge mass spectrometry (GDMS) analysis. By comparing the purity of three different starting materials, non-purified iodine+6N-Pb, purified iodine+6N-Pb and commercial 6N-PbI 2 , PbI 2 synthesized by purified iodine in the present experiment has the highest purity. This indicates that these purification methods are suitable. The present research results are expected to prepare high-resistivity PbI 2 used in radiation detector.

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Purification and growth of PbI/sub 2/ crystals: dependence of the radiation response on the PbI/sub 2/ crystal purity

Cited by 30 publications

References 15 publications

Purification and Crystal Growth of the Bismuth (III) Iodide-influence of Trace Impurities on the Crystal Quality

Purification and Crystal Growth of the Bismuth (III) Iodide-influence of Trace Impurities on the Crystal Quality

Optimization of the HgI2 Crystal Preparation for Application as a Radiation Semiconductor Detector

Growth of ultra‐high purity PbI₂ single crystal: (1) Preparation of high purity PbI₂

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Purification and growth of PbI/sub 2/ crystals: dependence of the radiation response on the PbI/sub 2/ crystal purity

Cited by 30 publications

References 15 publications

Purification and Crystal Growth of the Bismuth (III) Iodide-influence of Trace Impurities on the Crystal Quality

Purification and Crystal Growth of the Bismuth (III) Iodide-influence of Trace Impurities on the Crystal Quality

Optimization of the HgI2 Crystal Preparation for Application as a Radiation Semiconductor Detector

Growth of ultra‐high purity PbI2 single crystal: (1) Preparation of high purity PbI2

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Growth of ultra‐high purity PbI₂ single crystal: (1) Preparation of high purity PbI₂