Purge-time-dependent growth of ZnO thin films by atomic layer deposition

Park, Hui Kyung; Yang, Bong Seob; Park, Sang‐Hyun; Kim, Myung Sang; Shin, Jae Cheol; Heo, Jaeyeong

doi:10.1016/j.jallcom.2014.03.169

Cited by 27 publications

(16 citation statements)

References 53 publications

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“…On the one hand, a reduction of the purge time might shift the whole process from ALD more into the direction of chemical vapor deposition (CVD), on the other hand, this should not matter as long as conductivity and transmittance are at least on the same level as for a true ALD process. The influence of variations in purge time for the ALD process including DEZ and water has been reported before, but the reported purge times are significantly longer than the here presented ones.…”

Section: Resultssupporting

confidence: 51%

Optimization of ALD‐ZnO Thin Films Toward Higher Conductivity

Beh¹,

Hiller²,

Zacharias³

2018

Physica Status Solidi (a)

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Zinc oxide (ZnO) fabricated by atomic layer deposition (ALD) is a promising material to replace tin‐doped indium oxide (ITO) as standard transparent conductive oxide (TCO). However, its conductivity is still often about one order of magnitude below that of ITO. Variations in precursor choice, deposition process parameters, and post‐processing of ALD‐ZnO are tested concerning their impact in improvement of the TCO performance. Replacing the conventional diethylzinc (DEZ) with dimethylzinc (DMZ) as well as post‐deposition annealing in H2 yields no improvement for the highly conductive films (<10 mΩ cm) deposited at around 200 °C. However, reducing the purge time of the ALD process from 10 s down to 1 s and simultaneously increasing the DEZ pulse duration leads to a reduction in resistivity from 7.6 mΩ cm to 2.8 mΩcm. Furthermore, this process optimization involves a reduction of the total deposition time by almost one order of magnitude.

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Section: Resultssupporting

confidence: 51%

Optimization of ALD‐ZnO Thin Films Toward Higher Conductivity

Beh¹,

Hiller²,

Zacharias³

2018

Physica Status Solidi (a)

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“…Crystalline orientation can be changed from (100) to (002) by adding pulse step of O 2 before the H 2 O pulse in the usual DEZn/H 2 O process [15]. Long purge time for DI water results in dramatic change in electrical conductivity, preferred orientation, morphology, and defect states of ALD-grown ZnO [16]. Plasmaenhanced ALD (PEALD) with high reactivity O 2 plasma source makes ZnO high degree of stoichiometry [17].…”

Section: Introductionmentioning

confidence: 99%

ZnO thin films prepared by atomic layer deposition at various temperatures from 100 to 180 °C with three-pulsed precursors in every growth cycle

Cheng

Yuan

Chen

2016

Journal of Alloys and Compounds

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“…The flow rate for the N 2 purge was 200 sccm. Detailed information on the ZnO growth was reported elsewhere [24]. Three out of four different samples were prepared in this study, primarily by changing the growth temperature: 120°C, 170°C, and 300°C.…”

Section: Methodsmentioning

confidence: 99%

“…There are numerous reports regarding the growth of ZnO by ALD [15,16,[20][21][22][23][24][25]. However, due to their relatively low growth temperature (b300°C), the properties of the ZnO thin films are inferior compared to the films processed at high temperature and under high vacuum.…”

Section: Introductionmentioning

confidence: 99%