Purcell effect in photonic crystal microcavities embedding InAs/InP quantum wires

Canet‐Ferrer, Josep; Martínez, Luis; Prieto, Iván; Alén, Benito; Muñoz‐Matutano, Guillermo; Fuster, David; González, Y.; Dotor, María Luisa; González, L.; Postigo, P. A.; Martínez‐Pastor, Juan P.

doi:10.1364/oe.20.007901

Cited by 26 publications

(18 citation statements)

References 33 publications

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“…The Purcell factor drops by a factor of 10 when the dot is only about 150 nm away from the field maximum (Supplement 4). In addition, the polarization mismatch between dots and cavities further reduces the Purcell factor [44]. These imperfect spatial and polarization matches cause the discrepancy between the calculated and measured Purcell effect, and explains why some dots have negligible Purcell effect even at near zero spectral detuning in Fig.…”

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confidence: 99%

Two-photon interference from a bright single-photon source at telecom wavelengths

Kim

Cai

Richardson

et al. 2016

Optica

129

112

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Long-distance quantum communication relies on the ability to efficiently generate and prepare single photons at telecom wavelengths. In many applications these photons must also be indistinguishable such that they exhibit interference on a beamsplitter, which implements effective photon-photon interactions. However, deterministic generation of indistinguishable single photons with high brightness remains a challenging problem. We demonstrate two-photon interference at telecom wavelengths using an InAs/InP quantum dot in a nanophotonic cavity. The cavity enhances the quantum dot emission, resulting in a nearly Gaussian transverse mode profile with high out-coupling efficiency exceeding 36% after multi-photon correction. We also observe Purcell enhanced spontaneous emission rate up to 4. Using this source, we generate linearly polarized, high purity single photons at 1.3 μm wavelength and demonstrate the indistinguishable nature of the emission using a two-photon interference measurement, which exhibits indistinguishable visibilities of 18% without post-selection and 67% with post-selection. Our results provide a promising approach to generate bright, deterministic single photons at telecom wavelength for applications in quantum networking and quantum communication.* Email: edowaks@umd.edu 2 Single photon sources are important building blocks for optical quantum information processing [1][2][3][4]. They are essential to generate photonic quantum bits (qubits) that can travel long distances over optical fibers and interconnect distant quantum network nodes [5][6][7]. Efficient on-demand single photon sources also enable quantum computation schemes based on either linear [3, 4] or nonlinear [8] optical elements.Many applications in quantum communication require deterministic single-photon sources that emit at telecom wavelengths. Parametric down-conversion sources can operate in this wavelength range [9, 10] but provide only heralded single-photon states and cannot be easily extended to ondemand operation. In contrast, single quantum emitters provide the potential for creating ondemand single-photon sources [11, 12]. Quantum dots in III-V semiconductors are particularly promising quantum emitters that generate single photons with high indistinguishability at nearinfrared wavelengths [13][14][15][16][17][18], and are also compatible with electrical injection [19,20] and integration with nanophotonic structures [21][22][23][24]. A number of works have extended the emission of III-V quantum dots to telecom wavelengths by optimizing materials and growth parameters [25][26][27][28][29][30][31]. However, an on-demand source of indistinguishable single photons remains an outstanding challenge at telecom wavelength.In this work, we demonstrate two-photon interference from a bright single photon source at telecom wavelengths. We use a single InAs/InP quantum dot in a photonic crystal cavity to attain bright and highly polarized single-photon emission at telecom wavelengths. Rather than using the fundamental mode of the ca...

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confidence: 99%

Two-photon interference from a bright single-photon source at telecom wavelengths

Kim

Cai

Richardson

et al. 2016

Optica

129

112

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“…Although the homogeneous linewidth is rather large, these QDs fulfill some basic demands mostly when an accurate control of the emitter position is required, as for example photonic devices based on the spatial tuning of Purcell effect. 14,20 Finally, we have measured the energy splitting of the excited states to be compared with the neutral exciton energy. The existence of a level structure with well-defined P-states and the possibility of charge injection through the nominally forbidden transition promise a better control of the optical feeding, polarization and spin manipulation in our SCQDs.…”

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confidence: 99%

Exciton and multiexciton optical properties of single InAs/GaAs site-controlled quantum dots

Canet‐Ferrer

Muñoz‐Matutano

Herranz³

et al. 2013

Applied Physics Letters

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We have studied the optical properties of InAs site-controlled quantum dots (SCQDs) grown on prepatterned GaAs substrates. Since InAs nucleates preferentially on the lithography motifs, the location of the resulting QDs is determined by the pattern, which is fabricated by local oxidation nanolithography. Optical characterization has been performed on such SCQDs to study the fundamental and excited states. At the ground state different exciton complex transitions of about 500 leV linewidth have been identified and the fine structure splitting of the neutral exciton has been determined (%65 leV). The observed electronic structure covers the demands of future quantum information technologies. V C 2013 AIP Publishing LLC. [http://dx

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“…10 In our case, we also expect a background contribution from QWRs poorly coupled to the lasing mode of the PCM. 24 To evaluate the influence of the stimulated emission in the dependence of the decay times on the excitation power, we have compared time resolved measurements of lasing and nonlasing modes from different PCMs at nearly equal wavelengths. Figure 3 Fig.…”

Section: à3mentioning

confidence: 99%

“…19 The QWRs exhibit a broad emission and optical absorption, spatial, and spectral detuning resulting in a measured PF not larger than 3. 10,24,25 This value of PF provides a weak coupling regime at the same time than lasing, which makes our system especially suitable for PE studies on lasing modes.…”

mentioning

confidence: 97%

Excitation power dependence of the Purcell effect in photonic crystal microcavity lasers with quantum wires

Canet‐Ferrer

Prieto

Muñoz‐Matutano

et al. 2013

Applied Physics Letters

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The Purcell effect dependence on the excitation power is studied in photonic crystal microcavity lasers embedding InAs/InP quantum wires. In the case of non-lasing modes, the Purcell effect has low dependence on the optical pumping, attributable to an exciton dynamics combining free and localized excitons. In the case of lasing modes, the influence of the stimulated emission makes ambiguous the determination of the Purcell factor. We have found that this ambiguity can be avoided by measuring the dependence of the decay time on the excitation power. These results provide insights in the determination of the Purcell factor in microcavity lasers. V C 2013 AIP Publishing LLC.

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Purcell effect in photonic crystal microcavities embedding InAs/InP quantum wires

Cited by 26 publications

References 33 publications

Two-photon interference from a bright single-photon source at telecom wavelengths

Two-photon interference from a bright single-photon source at telecom wavelengths

Exciton and multiexciton optical properties of single InAs/GaAs site-controlled quantum dots

Excitation power dependence of the Purcell effect in photonic crystal microcavity lasers with quantum wires

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