Pump-induced bleaching of the saturable absorber in short-pulse Nd:YAG/Cr/sup 4+/:YAG passively Q-switched microchip lasers

Zayhowski, J. J.; Wilson, A.L.

doi:10.1109/jqe.2003.819535

Cited by 41 publications

(17 citation statements)

References 7 publications

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“…The values of the cross-sections σ a1 , σ a2 calculated from the results of [11] are significantly higher than the ones obtained in other works and, obviously, have got the artifact character. Also, the values obtained in [10] look as overestimated. Because of the uncertainty of the σ a1 , σ a2 , all calculations in the present work were carried out for three different sets of values.…”

Section: The Parameters Of the Laser Crystalmentioning

confidence: 86%

The Passively Q-switched Microchip Nd:YAG Laser Optimization for Rangefinder Applications

Buryy

Iznin²,

Syvorotka³

et al. 2010

Acta Phys. Pol. A

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The problem of Q-switched microchip Nd 3+ :YAG/Cr 4+ :YAG laser optimization is considered. In accordance with requirements of laser location, the optimization consists in determination of such values of the saturable absorber (Cr 4+ :YAG) thickness, the output laser mirror reflectivity and the pumping power, that ensure the generation of the sufficiently short (≈ 0.5 ns) laser pulses at the repetition rate of about 10 kHz and the peak power of about 1 kW or higher. Firstly, the dependences of the laser radiation parameters on the constructive ones are analyzed in the frames of Xiao-Bass model of Q-switched microchip laser. The obtained dependences are used for laser optimization. As it is shown, the parameters of laser radiation close to predominating ones are achieved at the absorber thickness of 140 µm, the output mirror reflectivity of 0.97 and the pumping power of 2.5 W.

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Section: The Parameters Of the Laser Crystalmentioning

confidence: 86%

The Passively Q-switched Microchip Nd:YAG Laser Optimization for Rangefinder Applications

Buryy

Iznin²,

Syvorotka³

et al. 2010

Acta Phys. Pol. A

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“…Passive gain modulation for lasers based on various LM with Nd 3+ ions with pulsed and continuous pumping was achieved using it [82,83,176,[191][192][193][194][195][196][197][198][199][200][201][202][203][204][205][206][207]. PS based on Cr 4+ :Y 3 Al 5 O 12 in Nd 3+ :Y 3 Al 5 O 12 lasers with lamp pumping enabled pulses of energy several tens of mJ and duration 3-65 nsec to be generated [83,96,204].…”

Section: Ndmentioning

confidence: 99%

“…In this instance the peak radiation power exceeded 0.5 MW. An analysis of the effect of pumping conditions on the characteristics of the emitted laser radiation in Nd 3+ :Y 3 Al 5 O 12 with a Cr 4+ :Y 3 Al 5 O 12 PS showed that even shorter pulses, down to 148 psec, could be produced [205]. Subnanosecond pulses (down to 490 psec) of energy 8 μJ were also produced in a Nd 3+ :LaSc 3 (BO 3 ) 4 laser [203].…”

Section: Ndmentioning

confidence: 99%

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Saturable absorbers based on tetrahedrally coordinated transition-metal ions in crystals (Review)

Malyarevich

Yumashev

2009

J Appl Spectrosc

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Published data on spectroscopic characteristics of saturable absorbers based on crystals doped with tetrahedrally coordinated transition-metal ions (Cr 2+ , Cr 4+ , Cr 5+ , V 3+ , Cr 2+ , Fe 2+ ) in addition to their use as passive Q-switches for solid-state lasers emitting in the visible and near-infrared regions are reviewed.Introduction. The use of saturable absorbers (SA) as passive Q-switches (PS) in solid-state lasers is an effective method for generating nanosecond and subnanosecond light pulses. This method differs favorably from active control of laser cavity gain by the lack of mechanical perturbations of the optical devices, additional sources of power supply, and external electrical control circuits. This simplifies the construction and operation of the laser and reduces its cost. Compact solid-state mini-lasers and ultra-small lasers (so-called microchip lasers) can be fabricated if PS are used.A SA is an optical material for which the transmission increases with increasing power density of the incident radiation. The SA should satisfy several requirements in order to be used as a PS. First of all this applies to SA characteristics at the laser operating wavelength such as absorption saturation energy density, coefficient of residual absorption in the fully bleached state, bleaching rise and fall time, and optical destruction threshold. The requirements for their absolute values depend on the spectroscopic properties of the lasing medium (LM) and the laser cavity parameters.In most instances with certain exceptions, SA based on tetrahedrally coordinated (TC) transition-metal ions of the iron group have bleaching relaxation times that are longer than the generation time of the laser pulses obtained using them. Such SA are usually called slowly relaxing. Relaxation processes leading to a restoration of their initial absorption can be ignored in analyzing their operation in a laser. In the simplest instance (if a four-level diagram is used for the spectroscopic model of the SA), the criterion for SA functioning as a PS is written [1-8]:

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“…The recent developments in the field deal essentially with shorter pulses and higher repetition rates as it is required for applications like high resolution ranging and imaging [4]. Pulses as short 148 ps have been demonstrated with Cr 4+ :YAG passively Q-switched Nd:YAG microlaser [5]. To obtain shorter pulses with high repetition rates, the use of Semiconductor Saturable Absorber Mirrors (SESAM) by Keller et al was a big step forward [6], leading to pulses as short as 37 ps with a repetition rate of 160 khz [7].…”

mentioning

confidence: 99%

Passively Q-switched diode-pumped Cr4+:YAG/Nd3+:GdVO4 monolithic microchip laser

Forget

Druon

Balembois

et al. 2006

Optics Communications

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: the realization of high repetition rate passively Q-switched monolithic microlaser is a challenge since a decade. To achieve this goal, we report here on the first passively Q-switched diode-pumped microchip laser based on the association of a Nd:GdVO 4 crystal and a Cr :YAG leading to a plano-plano cavity. A repetition rate as high as 85 kHz is achieved. The average output power is approximately 400 mW for 2.2 W of absorbed pump power and the pulse length is 1.1 ns.

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Pump-induced bleaching of the saturable absorber in short-pulse Nd:YAG/Cr/sup 4+/:YAG passively Q-switched microchip lasers

Cited by 41 publications

References 7 publications

The Passively Q-switched Microchip Nd:YAG Laser Optimization for Rangefinder Applications

The Passively Q-switched Microchip Nd:YAG Laser Optimization for Rangefinder Applications

Saturable absorbers based on tetrahedrally coordinated transition-metal ions in crystals (Review)

Passively Q-switched diode-pumped Cr4+:YAG/Nd3+:GdVO4 monolithic microchip laser

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