Pulsed THz emission from wurtzite phase catalyst-free InAs nanowires

Adomavičius, R.; Nevinskas, Ignas; Treu, Julian; Xu, Xiaomo; Koblmüller, Gregor; Krotkus, A.

doi:10.1088/1361-6463/ab7513

Cited by 3 publications

(4 citation statements)

References 34 publications

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“…The THz generation mechanism in InAs crystal is verified to be photo-Dember effect [38,52,53] because of narrow bandgap of ∼0.36 eV and the significant difference between the electron mobility of 30 000 cm 2 V −1 s −1 and the hole mobility of 240 cm 2 V −1 s −1 [54]. According to the reported THz emission works of InAs NWs, the photo-Dember effect is still the most possible mechanism for the THz generation phenomena [31][32][33]. However, we should note that the photo-Dember field in NWs is along the axial direction due to the uneven illumination [31], different from the photo-Dember field formed perpendicular to the large-scale uniform surface of crystals.…”

Section: Resultsmentioning

confidence: 98%

“…After, Erhard et al and Arlauskas et al have further reported the enhanced THz emission efficiency of InAs NWs and attribute the THz emission mechanism to the photo-Dember effect [31,32]. Recently, there is a report on the influence of the excitation laser polarization on the THz generation mechanisms for directions parallel and perpendicular to the NWs [33].…”

Section: Introductionmentioning

confidence: 99%

“…Secondly, there are different technics for the preparation of InAs NWs. Compared with catalyst-free methods [32,33], metal-catalyzed NW growth is generally more convenient and cheaper. Moreover, the probable interface effect between metal catalysts and NWs, and the localized surface plasmon resonance in the metal catalysts [34][35][36], could also be used to enhance the THz emission.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Enhanced terahertz emission from mushroom-shaped InAs nanowire network induced by linear and nonlinear optical effects

Xi¹,

Yang²,

Khayrudinov³

et al. 2021

Nanotechnology

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The development of powerful terahertz (THz) emitters is the cornerstone for future THz applications, such as communication, medical biology, non-destructive inspection, and scientific research. Here, we report the THz emission properties and mechanisms of mushroom-shaped InAs nanowire (NW) network using linearly polarized laser excitation. By investigating the dependence of THz signal to the incidence pump light properties (e.g. incident angle, direction, fluence, and polarization angle), we conclude that the THz wave emission from the InAs NW network is induced by the combination of linear and nonlinear optical effects. The former is a transient photocurrent accelerated by the photo-Dember field, while the latter is related to the resonant optical rectification effect. Moreover, the p-polarized THz wave emission component is governed by the linear optical effect with a proportion of ∼85% and the nonlinear optical effect of ∼15%. In comparison, the s-polarized THz wave emission component is mainly decided by the nonlinear optical effect. The THz emission is speculated to be enhanced by the localized surface plasmon resonance absorption of the In droplets on top of the NWs. This work verifies the nonlinear optical mechanism in the THz generation of semiconductor NWs and provides an enlightening reference for the structural design of powerful and flexible THz surface and interface emitters in transmission geometry.

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Section: Resultsmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Enhanced terahertz emission from mushroom-shaped InAs nanowire network induced by linear and nonlinear optical effects

Xi¹,

Yang²,

Khayrudinov³

et al. 2021

Nanotechnology

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show abstract

“…Recently, a broadband non-contact terahertz (THz) spectroscopy approach has been used to study the fundamental physics of various materials, including the details of conduction band structure at elevated energies [12], band offsets of heterojunctions [13], electron intervalley redistribution in germanium crystals [14] and wurtzite type InAs nanowires [15]. Exclusively among the spectroscopy approaches, THz time-domain emission spectroscopy (THz-TDS) under femtosecond laser excitation offers a contactless and a sensitive method to characterize the surfaces and interfaces of semiconducting materials [16].…”

mentioning

confidence: 99%

Terahertz pulse emission from photoexcited bulk crystals of transition metal dichalcogenides

Nevinskas¹,

Norkus²,

Geižutis³

et al. 2021

J. Phys. D: Appl. Phys.

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Multilayer MoS2, MoSe2, and WSe2 crystals were excited with femtosecond optical pulses of various wavelengths. The emitted terahertz (THz) radiation pulses were found to be the most intense at photon energies coinciding with the direct energy gap at the K points of the Brillouin zone of corresponding materials. It was shown that the transition metal dichalcogenides of different dopant type emit THz pulses of opposite polarity, suggesting that the surface field plays a role in THz emission. Nevertheless, the optical pump–THz probe experiments contradicted THz emission observations, demonstrating a decrease in photoconductivity at higher energy quanta. The proposed THz pulse generation mechanism, therefore, assumes the accumulation of excitonic electric dipoles during optical pulse absorption and a fast build-up of the internal electric field inside the samples. This assumption was supported by double optical pulse investigations.

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Terahertz emission from a bulk GaSe crystal excited by above bandgap photons

Norkus

Nevinskas

Krotkus

2020

Journal of Applied Physics

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Spectral dependences of the amplitudes of terahertz (THz) transients radiated from a GaSe surface after its excitation by femtosecond optical pulses with photon energies in the range from 1.8 eV to 3.8 eV were used for the study of electron energy band structure of this layered crystal. The energy separation of 0.21 eV between the main Γ valleys and the satellite K valleys in the conduction band was determined from the maximum position of THz excitation spectrum; the polarity of the THz transients became inverted at photon energies higher than 3 eV due to the onset of electron transitions from the second, lower lying valence band.

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Pulsed THz emission from wurtzite phase catalyst-free InAs nanowires

Cited by 3 publications

References 34 publications

Enhanced terahertz emission from mushroom-shaped InAs nanowire network induced by linear and nonlinear optical effects

Enhanced terahertz emission from mushroom-shaped InAs nanowire network induced by linear and nonlinear optical effects

Terahertz pulse emission from photoexcited bulk crystals of transition metal dichalcogenides

Terahertz emission from a bulk GaSe crystal excited by above bandgap photons

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