Pulsed passively mode locked operation of diode pumped Nd:GdVO 4 and Nd:YVO 4 in a bounce geometry

Kubeček, Václav; Drahokoupil, Michal; Jelı́nková, Helena; Stintz, A.; Diels, Jean‐Claude

doi:10.1117/12.763231

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Laser Mode-locking By Saturable Absorber In Transmission Mode1

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2012

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“…In the transmission mode two saturable absorbers were investigated in two resonator configurations. The saturable absorbers were grown by molecular beam epitaxy at the Center for High Technology Materials of the University of New Mexico (Diels, 2006;Kubeček, 2009c). The structures were grown on the 400 µm thick GaAs substrates and consisted of 33 or 100 quantum wells (QW) formed by the periods of 9 nm thick In 0.275 Ga 0.725 As and 11 nm thick GaAs layers grown at low temperature (around 350 • C) in order to decrease the carrier lifetime to the value less than 50 ps (Gupta, 1992).…”

Section: Laser Mode-locking By Saturable Absorber In Transmission Modementioning

confidence: 99%

“…Bounce geometry can be considered as a proper resonator configuration for efficient mode-locking operation in this pumping regime. Efficient operation of quasi-continuously pumped 1 at.% doped Nd:YAG (Kubeček, 2008) and also Nd:YVO 4 and Nd:GdVO 4 (Kubeček, 2009a; using the saturable absorber in the transmission mode was already reported.…”

Section: Introductionmentioning

confidence: 99%

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