Abstract:Poly-SiGe is widely used in MEMS applications as structural films for it's similar to poly-Si and compatible with standard CMOS (Al interconnects) backend processing. However, with its large as-deposited stress, it becomes more and more challenging and critical to control stress relaxation for sensitivity improvement of MEMS. In this paper, we demonstrate eliminating the stress in poly-SiGe films used in pressure sensor as membrane by excimer laser thermal annealing (LTA). First, the threshold melting laser en… Show more
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