Pulsed Laser Deposition Synthesis and Photoemission Study of Superconducting Ba-Cu-O Thin Films

Kikunaga, Kazuya; Yamamoto, Tetsuro; Takeshita, Kazunori; Oki, Kenji; Okuda, Takashi; Obara, Kozo; Tokiwa, Kazuyasu; Wakamatsu, Hiroki; Watanabe, Tsuneo; Kikuchi, Naoto; Tanaka, Y.; Terada, Norio

doi:10.1088/1742-6596/43/1/062

Cited by 10 publications

(7 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This makes them attractive materials for a variety of applications if we can grow high-quality thin films of these compounds. However, there were few reports on their thin film growth [12][13][14][15][16] growth of superconducting (Cu, C)Ba 2 Ca (nÀ1) Cu n O y thin films with n ¼ 1-4 using MBE.…”

Section: Introductionmentioning

confidence: 99%

Thin film growth of (Cu, C)Ba2Ca(n−1)CunOy (n=1–4) superconductor by molecular beam epitaxy

Shibata

Karimoto

Tsukada

et al. 2007

Journal of Crystal Growth

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 99%

Thin film growth of (Cu, C)Ba2Ca(n−1)CunOy (n=1–4) superconductor by molecular beam epitaxy

Shibata

Karimoto

Tsukada

et al. 2007

Journal of Crystal Growth

View full text Add to dashboard Cite

“…Most of the good TE materials are heavily doped semiconductors. Indeed, we have seen that high PFs were similarly achieved in RE orthoferrites at large hole concentrations, for example, for PrFeO 3 , PF ∼ 100 μW/m K 2 (at 10 20 cm –3 ), and PF ∼ 270 μW/m K 2 (at 10 21 cm –3 ) at 900 K. The realization of such heavy p-doping has been demonstrated in previous literature, which has shown that achieving high p-type doping of 10 20 –10 21 cm –3 is experimentally doable in various materials. − However, studies on perovskite materials for TE applications are just recently emerging. Hence, we say that further experiments are needed to be done to test the effect of heavy hole doping on perovskite structures.…”

Section: Resultsmentioning

confidence: 61%

Large Power Factors in Wide Band Gap Semiconducting RFeO₃ Materials for High-Temperature Thermoelectric Applications

Panneerselvam

Baldo

Sahasranaman

et al. 2020

ACS Appl. Energy Mater.

View full text Add to dashboard Cite

While most of the thermoelectric materials work well only at low and mid temperatures, high-temperature thermoelectric materials (T > 900 K) are equally important for the operation of deep-spacecraft missions, nuclear reactors, and high-temperature industrial reactors. To accomplish this demand, this work provides insights into wide band gap semiconducting RFeO 3 (rare-earth orthoferrites) for high-temperature thermoelectric applications. Using the first-principles density functional theory calculations, we have demonstrated the coexistence of extremely flat and corrugated flat bands near the Fermi region in a wide band gap material. The presence of such features enhances and sustains the thermopower, electrical conductivity, and power factor, which are the crucial factors for the efficiency of thermoelectric materials. Semiclassical Boltzmann formalism was then employed to study the transport properties of four orthorhombic RFeO 3 materials (R = Pr, Nd, Sm, and Gd). Our results reveal high Seebeck coefficients (thermopower) along with the large electrical conductivities over the high hole doping carrier concentration and in the high-temperature region (T > 900 K). Furthermore, significantly large power factors are obtained with very low theoretical minimum lattice thermal conductivity in the range 1.41−1.51 W m −1 K −1 . These huge power factors directly suggest the maximum power output in RFeO 3 , which we believe is a more appropriate performance index than the figure of merit, especially for hightemperature thermoelectric applications. We also emphasize that the outcomes of our work would be certainly useful for experimentalists in designing high-temperature thermoelectric materials.

show abstract

“…We have attempted the growth of (Cu, C)-1201 thin films, which is a parent material of the (Cu, C)-system and a starting point toward the (Cu, C)-12(n − 1)n multi-layered structure by using the artificial superlattice method. In our previous studies, the superconducting critical temperature T c−onset ∼ 60 K and T c(ρ=0) > 40 K have been achieved even for the films deposited at a noteworthy low growth temperature around 500-550 • C [6]. A group of multilayered HTSs involving more than three CuO 2 planes in a unit cell involves crystallographically non-equivalent CuO 2 planes.…”

Section: Introductionmentioning

confidence: 96%

Characterization of electronic structure of superconducting (Cu, C)–Ba–O films byin situphotoemission spectroscopy

Kikunaga¹,

Takeshita²,

Yamamoto³

et al. 2007

Supercond. Sci. Technol.

Self Cite

View full text Add to dashboard Cite

Change of electronic structure of superconducting (Cu, C)-1201 thin films grown by pulsed laser deposition with superconducting critical temperature Tc has been characterized by means of in situ photoemission spectroscopy. The finite spectral weight at the Fermi level in the valence band of (Cu, C)-1201 superconducting thin films and a rigid-band-like approach of the main peak of the valence band toward the Fermi level with a rise of Tc has been observed, which reveals hole-doping-induced superconductivity of this system. The obtained Ba 4d and Cu 2p signals with an increase of Tc suggest excess oxygen should be introduced around Ba ions in the early stage of the emergence of superconductivity. Then, they should be preferentially introduced around Cu ions. The changes of core signals with Tc and comparisons of the obtained data with infinite-layer and other cuprate superconductor compounds suggest that the (Cu, C)–O charge reservoir in this system is in the heavily hole-doped state, similar to that of the Cu–O chain in YBa2Cu3O7−δ.

show abstract

Pulsed Laser Deposition Synthesis and Photoemission Study of Superconducting Ba-Cu-O Thin Films

Cited by 10 publications

References 6 publications

Thin film growth of (Cu, C)Ba2Ca(n−1)CunOy (n=1–4) superconductor by molecular beam epitaxy

Thin film growth of (Cu, C)Ba2Ca(n−1)CunOy (n=1–4) superconductor by molecular beam epitaxy

Large Power Factors in Wide Band Gap Semiconducting RFeO₃ Materials for High-Temperature Thermoelectric Applications

Characterization of electronic structure of superconducting (Cu, C)–Ba–O films byin situphotoemission spectroscopy

Contact Info

Product

Resources

About

Pulsed Laser Deposition Synthesis and Photoemission Study of Superconducting Ba-Cu-O Thin Films

Cited by 10 publications

References 6 publications

Thin film growth of (Cu, C)Ba2Ca(n−1)CunOy (n=1–4) superconductor by molecular beam epitaxy

Thin film growth of (Cu, C)Ba2Ca(n−1)CunOy (n=1–4) superconductor by molecular beam epitaxy

Large Power Factors in Wide Band Gap Semiconducting RFeO3 Materials for High-Temperature Thermoelectric Applications

Characterization of electronic structure of superconducting (Cu, C)–Ba–O films byin situphotoemission spectroscopy

Contact Info

Product

Resources

About

Large Power Factors in Wide Band Gap Semiconducting RFeO₃ Materials for High-Temperature Thermoelectric Applications