Pulsed laser deposition of TiO2 for MOS gate dielectric

Effect of annealing temperatures on the morphology, optical and electrical properties of TiO2 thin films synthesized by the sol–gel method and deposited on Al/TiO2/SiO2/p-Si

“…Among these high-k dielectric materials, titanium dioxide (TiO 2 ) exhibits as the ideal candidate to replace the conventional oxide material of silicon dioxide (SiO 2 ). It is because SiO 2 has become vulnerable to direct tunnelling (gate leakage) at a low dimensional which resulted indirectly drastic increases in the leakage current (Paily et al 2002). Therefore, the design of nanostructures of TiO 2 thin films has attracted great attention around the world due to its unique electrical properties because it possess a credible alternative dielectric due to its higher dielectric constant and higher breakdown strength as compared to SiO 2 (Campbell et al 1997).…”

Enhanced photocatalytic activity of mesoporous SiO2/TiO2 sol–gel coatings doped with Ag nanoparticles

“…Moreover, transparent thin films are already used in self-cleaning windows for buildings [17]. Different techniques, such as spray pyrolysis [18], sol-gel method [14,19], sputtering [20], solvothermal method [21], pulsed laser deposition [22], atomic layer deposition [23], and chemical vapour deposition (CVD) [24], have been used to obtain TiO 2 coatings. Particularly, sol-gel process is widely used due to its multiple advantages, including the easiness to obtain TiO 2 in anatase phase at low temperature.…”

Effect of additives and precursor chemical structure on crystalline shape and optical properties of TiO2

“…In the past decade, some techniques, such as spray pyrolysis [5], electrodeposition [6], sputtering [7,8], solvothermal method [9], pulsed laser deposition [10], Microwave Method [11], chemical vapour deposition (CVD) [12], sol gel method [13] and PECVD [14] have been used to deposit TiO 2 thin films on glass, quartz or silicon substrate. Each of these techniques has its own advantages and disadvantages.…”