1992
DOI: 10.1063/1.350509
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Pulsed laser deposition of stoichiometric LiNbO3 thin films by using O2 and Ar gas mixtures as ambients

Abstract: Stoichiometric thin films of LiNbO3 have been deposited on (100) silicon by a pulsed excimer laser deposition technique. By studying several cases of depositions in vacuum, oxygen, and argon, as well as oxygen-argon mixture as ambients, it is brought out that the desired stoichiometry in the film can be attained only by having an appropriate oxygen-argon mixture during deposition. The films have been characterized by x-ray diffraction, infrared transmission, and spectroscopic ellipsometry techniques.

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Cited by 59 publications
(22 citation statements)
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“…The use of pulsed laser deposition helped to overcome this problem by producing highly textured LN films. [9][10][11][12] Whereas there are some reports on the secondorder nonlinear response of LN textured films, 11,12 to our knowledge, there is just one work reporting the successful doping of textured LN films by covering the substrate with an Er layer that was later indiffused by annealing thus leading to a nonhomogeneous Er profile. 13 The aim of this work is twofold: First, to study the influence of doping LN with Er on the second-harmonic ͑SH͒ response, and second, to report the growth of strongly textured Er-LN films in a single-step process, with a controlled depth profile and with excellent PL and SH performances when compared to those of the bulk crystalline material.…”
mentioning
confidence: 96%
“…The use of pulsed laser deposition helped to overcome this problem by producing highly textured LN films. [9][10][11][12] Whereas there are some reports on the secondorder nonlinear response of LN textured films, 11,12 to our knowledge, there is just one work reporting the successful doping of textured LN films by covering the substrate with an Er layer that was later indiffused by annealing thus leading to a nonhomogeneous Er profile. 13 The aim of this work is twofold: First, to study the influence of doping LN with Er on the second-harmonic ͑SH͒ response, and second, to report the growth of strongly textured Er-LN films in a single-step process, with a controlled depth profile and with excellent PL and SH performances when compared to those of the bulk crystalline material.…”
mentioning
confidence: 96%
“…7 Although PLD has proven to be one of the m ost successful techniques in growing complex oxide materials, 8 the lms deposited by ablation of LiNbO 3 in vacuum or low pressure (,1 torr) atmospheres are often found to be Li de cient. 9,10 However, recent results indicate that when the growth is carried out at a pressure of about 1 torr, independent of the nature of the ambient atmosphere used (either inert or reactive), the LiNbO 3 lms grow stoichiometrically, though their crystallinity is slightly better when using Ar. 11 We reported earlier on a spectroscopic study of the light emitted from the plasm a formed by laser ablation of a LiNbO 3 single crystal in vacuum.…”
Section: Introductionmentioning
confidence: 99%
“…Single crystal films of LN and LT are deposited by various methods such as liquid phase epitaxy (LPE), 1) metal organic chemical vapor deposition (MOCVD), 2,3) pulsed laser deposition (PLD), [4][5][6][7][8] sol-gel method [9][10][11] and sputtering technique. 12) However, only a few papers have been reported for processing of LNT.…”
Section: Introductionmentioning
confidence: 99%