Pulsed laser deposition of cubic boron nitride films at high growth rates

Weißmantel, Steffen; Reiße, G.

doi:10.1016/s0925-9635(01)00386-7

Cited by 19 publications

(3 citation statements)

References 12 publications

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“…Keunecke et al deposited 1.2 μm-thick cBN films on WC-Co cutting inserts with TiN (or TiAlN)/graded BCN→BN interlayer systems and demonstrated the high potential of cBN coatings in the turning and milling tests . On the other hand, a few groups reported the deposition of cBN films on WC-Co without adhesion interlayers, − but they have not obtained thick and adherent cBN films.…”

Section: Introductionmentioning

confidence: 99%

Direct Deposition of Cubic Boron Nitride Films on Tungsten Carbide–Cobalt

Teii

Matsumoto

2012

ACS Appl. Mater. Interfaces

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Thick cubic boron nitride (cBN) films in micrometer-scale are deposited on tungsten carbide-cobalt (WC-Co) substrates without adhesion interlayers by inductively coupled plasma-enhanced chemical vapor deposition (ICP-CVD) using the chemistry of fluorine. The residual film stress is reduced because of very low ion-impact energies (a few eV to ∼25 eV) controlled by the plasma sheath potential. Two types of substrate pretreatment are used successively; the removal of surface Co binder using an acid solution suppresses the catalytic effect of Co and triggers cBN formation, and the surface roughening using mechanical scratching and hydrogen plasma etching increases both the in-depth cBN fraction and deposition rate. The substrate surface condition is evaluated by the wettability of the probe liquids with different polarities and quantified by the apparent surface free energy calculated from the contact angle. The surface roughening enhances the compatibility in energy between the cBN and substrate, which are bridged by the interfacial sp(2)-bonded hexagonal BN buffer layer, and then, the cBN overlayer is nucleated and evolved easier.

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Section: Introductionmentioning

confidence: 99%

Direct Deposition of Cubic Boron Nitride Films on Tungsten Carbide–Cobalt

Teii

Matsumoto

2012

ACS Appl. Mater. Interfaces

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“…These methods comprise high-pressure high-temperature (HPHT) procedures, physical vapor deposition (PVD) and CVD. Representative PVD techniques are, for example, ion beam-assisted deposition (IBAD), [1,2] massselected ion beam deposition (MSIBD), [3] laser ablation, [4,5] and magnetron sputtering.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of Boron Nitride Films Using Electron–Cyclotron Resonance Microwave Plasma and an H₂–BF₃–N₂–Ar–He Gas System

Chan¹,

Zhang²,

Chan³

et al. 2003

Chemical Vapor Deposition

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Boron nitride (BN) films with high crystallinity and phase purity (>80 %) in the cubic phase were synthesized over large areas using fluorine chemistry and electron±cyclotron resonance (ECR) microwave plasma. Plasma-enhanced fluorine chemistry was provided by a complex H 2 ±BF 3 ±N 2 ±Ar±He gas mixture. Each component of the mixture was optimized in accordance with its function. Such a procedure allowed the preparation of thick cBN films at a bias voltage as low as ±30 V. Micrometerthick cBN films exhibiting columnar growth were obtained. However, ion bombardment was still indispensable for the cBN growth. The effects of deposition time and ion bombardment on the phase purity and crystallinity of the cBN films were investigated.

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“…Recently, there have been many reports on the preparation of cBN films by using a variety of techniques, such as physical vapor deposition (PVD) and chemical vapor deposition (CVD) methods (7)(8)(9). All the physical deposition techniques for cBN thin films growth involve energetic ion irradiation of the surface to initiate and sustain the formation the sp 3 -bonded cubic phase (10).…”

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confidence: 99%