Pulsed-laser-deposited p-type ZnO films with phosphorus doping

Abstract

We report the preparation of p-type ZnO thin films on Al2O3(0001) substrates with phosphorus doping by pulsed laser deposition using Zn3P2 as the dopant source material. The results of the Hall effect measurements taken at room temperature indicate that the 3-mol% phosphorus-doped ZnO films thermally annealed at temperatures between 600 and 800°C under an O2 atmosphere exhibit p-type behavior with a hole concentration of 5.1×1014−1.5×1017cm−3, a hole mobility of 2.38−39.3cm2∕Vs, and a resistivity of 17−330Ωcm. The low-temperature (15K) photoluminescence results reveal that the peak related to the neutral-acceptor bound exciton (A0,X) emission at 3.358eV is only observed in the films showing p-type behavior. Our results not only demonstrate that there is a narrow temperature window for rapid thermal annealing in which phosphorus-doped p-type ZnO films can be obtained, but also suggest that the use of Zn3P2 can provide an effective approach to the preparation of p-type ZnO films.

P-Type Phosphorus Doped ZnO Wires for Optoelectronic Applications

“…It indicates that these emission peaks are due to the intentional phosphorous doping. The peak at 3.356 eV can be ascribed to the phosphorus-related neutral acceptor-bound exciton (A 0 , X) emission [Hwang et al, 2005, Vaithianathan et al, 2005. As for the peak at 3.314 eV, it is a prominent optical characteristic of most p-type ZnO material doped with group V elements.…”

ZnO Doping and Defect Engineering—A Review

“…The light emission from this device at 110 K verified the formation of the real p-n junction. Inspired from this research, Vaithianathan et al [69] used a pulsed-laser deposition to grow phosphorus-doped ZnO. The results of the Hall effect measurements taken at room temperature show that the 3-mol% phosphorus-doped ZnO films thermally annealed at temperature between 600 and 800°C exhibit p-type behavior with a hole concentration of 5.1 × 10 14 -1.5 × 10 17 cm −3 , a hole mobility of 2.38-39.3 cm 2 /V s, and a resistivity of 17-330 Ω cm.…”

Optical properties of Zn1−x Al x O:NiO transparent metal oxide composite thin films prepared by sol–gel method

“…There are several methods of synthesis of ZnO nanostructures in the literature such as spray pyrolysis [21][22][23], sputtering [24][25][26][27], chemical vapor deposition [28,29] and pulsed laser deposition [30]. But among all, the sol-gel method is simple and cost-effective and provides homogeneity and lower crystallization temperature.…”