Pulsed-laser deposited GdBaSrCu3O7−δ and GdBa2Cu3O7−δ films

Stangl, E.; Proyer, S.; Borz, Mario; Hellebrand, B.; Bäuerle, D.

doi:10.1016/0921-4534(95)00667-2

Cited by 13 publications

(2 citation statements)

References 34 publications

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“…The ρ(T ) curves around the superconducting transition of all the samples in both B c and B ⊥ c directions are shown in figure 1. The normal state resistivities agree with values found in the literature for undoped GdBCO thin films on STO [11] and YBCO films on various substrate materials (including STO) [12]. The onsets of the superconducting transitions in both directions were T c = 92.2 K, 93.0 K, 92.2 K, and 93.2 K for YBCO, GdBCO, YBCO + 4 wt% BZO, and GdBCO + 4 wt% BZO, respectively.…”

Section: Resultssupporting

confidence: 86%

Reduced intrinsic and strengthened columnar pinning of undoped and 4 wt% BaZrO₃-doped GdBa₂Cu₃O_{7 − δ}thin films: a comparative resistivity study nearT_c

Schlesier

Huhtinen

Paturi

2010

Supercond. Sci. Technol.

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The resistivities of undoped and 4 wt% BaZrO 3 -doped (BZO) GdBa 2 Cu 3 O 7−δ (GdBCO) thin films were measured in a temperature activated flux-flow regime (TAFF). In addition, resistivity versus rotation angle of magnetic field, ρ( ), measurements were done near the critical temperature, T c . The results of undoped and doped GdBCO were compared with ones of YBCO, and they showed that YBCO has better intrinsic pinning of CuO-planes than GdBCO. This is explained by the extra stacking faults distorting the ab-planes in GdBCO. The BZO-doping increased activation energy, U 0 , in B c geometry at fields higher than 1 T in YBCO and 3 T in GdBCO, but reduced U 0 in the B ⊥ c direction in the whole measured magnetic field range. Also, the irreversibility field, B irr , was enhanced in BZO-doped GdBCO at fields higher than 3 T in B c, but was reduced in the B ⊥ c direction. The reduction of U 0 and B irr in the B ⊥ c direction in BZO-doped films is explained by BZO nanorods distorting the ab-planes, too. The distortion may explain the more isotropic ρ( ) in GdBCO and BZO-doped material. The 4 wt% BZO-doping seems to be more effective on GdBCO, and we suggest that either cation substitution, excess strain caused by the interaction of the extra stacking faults and BZO nanorods, or oxygen deficiency result in nanosized regions whose superconducting properties are reduced and which act as extra pinning sites. According to the resistivity measurements near T c , the undoped YBCO should be used if high pinning of the ab-planes is needed. Further, from these materials 4 wt% BZO-doped GdBCO is best suited for applications where high magnetic fields are needed at high temperatures.

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Section: Resultssupporting

confidence: 86%

Reduced intrinsic and strengthened columnar pinning of undoped and 4 wt% BaZrO₃-doped GdBa₂Cu₃O_{7 − δ}thin films: a comparative resistivity study nearT_c

Schlesier

Huhtinen

Paturi

2010

Supercond. Sci. Technol.

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“…According to recent studies, (GdBCO) has higher than YBCO, resulting in higher in thin films at 77 K [1]- [3]. Also, for GdBCO thin films and coated conductors (CC) a higher critical current density, , is reported in high magnetic fields at 77 K [1], [2], [4]- [6]. The angular dependence of was more isotropic for GdBCO than for YBCO and the volume of -oriented grains does not grow as much as in YBCO as film thickness increases [7], [8].…”

Section: Introductionmentioning

confidence: 94%

Structural and Superconducting Properties of Undoped and BZO-doped GdBCO Thin Films

Schlesier

Huhtinen

Paturi

et al. 2009

IEEE Trans. Appl. Supercond.

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We report the effect of 4 wt% BZO-doping in GdBCO thin films on (100) STO substrates with novel nanograined target materials deposited by pulsed laser deposition (PLD) method. X-ray diffraction, atomic force microscopy and magnetization measurements, which were made in particularly wide temperature and magnetic field range, were used to determine the structural and superconducting properties. The results were compared with ones of YBCO. The deposition temperature, s , is not very critical for GdBCO and it is found to be much lower in undoped and BZO-doped GdBCO than in YBCO. The BZO-doping of GdBCO enhanced the field dependence of critical current density, c , at low temperatures. Furthermore, BZO-doping enhances the accommodation field, , below 60 K being clearly higher at 10 K in doped GdBCO than in YBCO. The pinning mechanism in GdBCO was concluded to be similar to that of YBCO. Our results clearly show that undoped and BZO-doped nanophase GdBCO is a very promising target material for applications as well as for coated conductors.

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Cuprate High‐Temperature Superconductors

Hott¹,

Wolf²

2015

Digital Encyclopedia of Applied Physics

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Pulsed-laser deposited GdBaSrCu3O7−δ and GdBa2Cu3O7−δ films

Cited by 13 publications

References 34 publications

Reduced intrinsic and strengthened columnar pinning of undoped and 4 wt% BaZrO₃-doped GdBa₂Cu₃O_{7 − δ}thin films: a comparative resistivity study nearT_c

Reduced intrinsic and strengthened columnar pinning of undoped and 4 wt% BaZrO₃-doped GdBa₂Cu₃O_{7 − δ}thin films: a comparative resistivity study nearT_c

Structural and Superconducting Properties of Undoped and BZO-doped GdBCO Thin Films

Cuprate High‐Temperature Superconductors

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Pulsed-laser deposited GdBaSrCu3O7−δ and GdBa2Cu3O7−δ films

Cited by 13 publications

References 34 publications

Reduced intrinsic and strengthened columnar pinning of undoped and 4 wt% BaZrO3-doped GdBa2Cu3O7 − δthin films: a comparative resistivity study nearTc

Reduced intrinsic and strengthened columnar pinning of undoped and 4 wt% BaZrO3-doped GdBa2Cu3O7 − δthin films: a comparative resistivity study nearTc

Structural and Superconducting Properties of Undoped and BZO-doped GdBCO Thin Films

Cuprate High‐Temperature Superconductors

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Reduced intrinsic and strengthened columnar pinning of undoped and 4 wt% BaZrO₃-doped GdBa₂Cu₃O_{7 − δ}thin films: a comparative resistivity study nearT_c

Reduced intrinsic and strengthened columnar pinning of undoped and 4 wt% BaZrO₃-doped GdBa₂Cu₃O_{7 − δ}thin films: a comparative resistivity study nearT_c