Pulsed-laser deposited Er:ZnO films for 1.54μm emission

Abstract

Structural and luminescent properties of Er-doped ZnO films grown by metalorganic chemical vapor depositiona)

Aligned Al:ZnO nanorods on Si with different barrier layers for optoelectronic applications

“…The films showed a positive temperature coefficient of resistance (TCR) above MST and a negative TCR below it. The positive TCR metal-type conductivity behavior can be explained by the formation of a degenerate band appearing in heavily doped semiconductors as suggested by Mott, and found in other doped ZnO semiconductors such as Ga:ZnO 4 , Al:ZnO, Nb:TiO 2 , and As-and Er-doped ZnO [12][13][14][15][16][17]. Alternatively, the MST transition can also be explained taking into account the percolation phenomenon, especially in the presence of metallic and semiconductor like networks, which facilitate competition between two types of conduction.…”

Structural, electronic and magnetic properties of Er implanted ZnO thin films

“…Rare-earth doped semiconductors are promising materials for optoelectronic applications owing to their intra-4f shell transitions [1][2][3]. In particular, erbium (Er) is known for photoemission in the infrared band [2,3].…”

Effect of Er doping on microstructure and optical properties of ZnO thin films prepared by sol–gel method

“…In recent years, semiconductors doped with trivalent rare earth (RE 3? ) ions, such as GaN:Eu [7], InP:Yb [8] and ZnO:Er [9,10], are technologically important materials in optoelectronic devices and have received great research interest. The efficient energy transfer from semiconductors host to RE 3? ions is essential for the potential applications of RE 3? doped semiconductor [6].…”