Pulsed-<i>IV</i> Pulsed-RF Cold-FET Parasitic Extraction of Biased AlGaN/GaN HEMTs Using Large Signal Network Analyzer

Yang, Chieh; Roblin, Patrick; Groote, Fabien de; Ringel, S. A.; Rajan, Siddharth; Teyssier, Jean-Pierre; Poblenz, C.; Pei, Yutao; Speck, James S.; Mishra, Umesh K.

doi:10.1109/tmtt.2010.2045452

Cited by 23 publications

(7 citation statements)

References 31 publications

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“…To calibrate the measurement system, the short-open-loadthrough method was implemented. In addition, the pad-todevice parasitic elements were eliminated with the cold-FET extraction technique that has been successfully employed in AlGaN/GaN HEMTs [7]. For that purpose, the RF access structure with an admittance matrix Y cold obtained with the device in pinchoff (V g = −6 V < V th ) and V d = 0 V must be de-embedded from the measured Y admittance matrix of the device at the bias point of the ac measurement setup.…”

Section: Methodsmentioning

confidence: 99%

“…When silicon-on-insulator (SOI) technology is used, the buried oxide layer (BOX) significantly prevents heat transfer toward the substrate [5]. With advanced semiconductor materials, such as GaN-based compound semiconductors, a significant heat generation in the channel of high-power devices can be present [6] that can even vary their asymmetric access resistances [7], [8]. In any case, characterization and modeling of the thermal resistance of transistors are essential for a proper circuit and package design.…”

Section: Introductionmentioning

confidence: 99%

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RF Extraction of Thermal Resistance for GaN HEMTs on Silicon

González

Lázaro

Rodríguez

2022

IEEE Trans. Electron Devices

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In this article, an ac conductance method has been successfully employed to extract the thermal resistance of GaN-based high-electron-mobility transistors (HEMTs) on silicon. The resulting thermal resistances, when varying the channel length and gate width, are comparable to those obtained with pulsed measurements, by making use of positive drain-to-source pulsed voltages from a zero power dissipation quiescent bias point and 3-D thermal simulations. Furthermore, the gate geometry dependence of the thermal resistance of GaN-based HEMTs has been successfully modeled for circuit-design purposes.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

RF Extraction of Thermal Resistance for GaN HEMTs on Silicon

González

Lázaro

Rodríguez

2022

IEEE Trans. Electron Devices

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“…In the early stages of AlGaN/GaN HEMTs development, due to the immature process, the access resistances exhibit a significant bias dependence, [7][8][9] especially for the non-passivated devices. 9,10 The influence of this bias dependence on transconductance, 7,9 transconductance delay, 9 and RF performance 8 of AlGaN/GaN HEMTs have been well studied. However, recent studies, 10,11 show that the bias dependence of access resistances is insignificant in passivated AlGaN/GaN HEMTs; for passivated devices, the variation of the access resistances with bias voltage is caused by the reduction of mobility with increased temperature due to selfheating.…”

mentioning

confidence: 99%

“…9,10 The influence of this bias dependence on transconductance, 7,9 transconductance delay, 9 and RF performance 8 of AlGaN/GaN HEMTs have been well studied. However, recent studies, 10,11 show that the bias dependence of access resistances is insignificant in passivated AlGaN/GaN HEMTs; for passivated devices, the variation of the access resistances with bias voltage is caused by the reduction of mobility with increased temperature due to selfheating. 10 Since passivation has become popular, it is important to focus on the temperature dependence of access resistances for stateof-art AlGaN/GaN HEMTs.…”

mentioning

confidence: 99%

“…However, recent studies, 10,11 show that the bias dependence of access resistances is insignificant in passivated AlGaN/GaN HEMTs; for passivated devices, the variation of the access resistances with bias voltage is caused by the reduction of mobility with increased temperature due to selfheating. 10 Since passivation has become popular, it is important to focus on the temperature dependence of access resistances for stateof-art AlGaN/GaN HEMTs. Several methods have been proposed z E-mail: yuehangxu@uestc.edu.cn to obtain temperature dependent access resistances (TDARs) of Al-GaN/GaN HEMTs.…”

mentioning

confidence: 99%

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Investigations of the Effect of Temperature-Dependent Access Resistances on Compact Model Parameters Extraction of AlGaN/GaN HEMTs

Zhao

Wen

et al. 2017

ECS J. Solid State Sci. Technol.

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In this paper, the effect of temperature-dependent access resistances (TDARs) on intrinsic parameters extraction of compact model in AlGaN/GaN high electron–mobility transistors (HEMTs) is analyzed. Comparison of small-signal, large-signal, and dynamic load line results between the proposed method and conventional method are presented. It reveals that considering the TDARs effect can improve the accuracy of the large-signal model at high input power conditions. This is attributed to the improved accuracy of the extracted intrinsic parameters. Moreover, the nonlinearity of gate-drain series resistance (Rgd) is modeled for the first time. It shows that the consideration of nonlinear Rgd model can extend the applicable bias-voltage range of the large-signal model. A 0.15 μm gate-length GaN HEMT on SiC substrate is used for method validation. The results of the paper can be useful for millimeter-wave GaN circuits design.

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Trapping behavior of GaN HEMTs and its implications on class B PA bias point selection

Cabral

Nunes

Ressurreição

et al. 2015

Int J Numerical Modelling

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Gallium nitride high electron mobility transistors (GaN HEMTs) have been accused of suffering from softcompression, a recognized form of nonlinearity. Recently published works showed that this phenomenon -explained with the devices' charge-trapping effects -is only observed under CW operation, which has little in common with generally used communication signals. In real operation, those effects (modeled as a self-biasing phenomenon visible as a threshold voltage variation) are also observable, but in an apparently different way. Several nonlinear models already take into account this variation and, more recently, the authors presented an extraction methodology for such complicated systems. Based on that information, this paper presents the trapping behavior of GaN HEMTs and a physically based way of adjusting the quiescent point of a desired class B GaN HEMT-based PA, designed to operate under dynamically varying signals.

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Pulsed-IV Pulsed-RF Cold-FET Parasitic Extraction of Biased AlGaN/GaN HEMTs Using Large Signal Network Analyzer

Cited by 23 publications

References 31 publications

RF Extraction of Thermal Resistance for GaN HEMTs on Silicon

RF Extraction of Thermal Resistance for GaN HEMTs on Silicon

Investigations of the Effect of Temperature-Dependent Access Resistances on Compact Model Parameters Extraction of AlGaN/GaN HEMTs

Trapping behavior of GaN HEMTs and its implications on class B PA bias point selection

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