Pulsed growth techniques in plasma-assisted molecular beam epitaxy of Al Ga1−N layers with medium Al content (x=0.4–0.6)

Нечаев, Д. В.; Brunkov, P. N.; Troshkov, S. I.; Jmerik, V. N.; Иванов, С. В.

doi:10.1016/j.jcrysgro.2015.03.055

Cited by 15 publications

(5 citation statements)

References 16 publications

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“…The formation of the metal microdroplets under these conditions was avoided by using Ga (or Al) flux interruptions with duration controlled by pyrometry. 18,19) The nucleation and growth were also monitored in situ by reflection high-energy electron diffraction technique (RHEED).…”

Section: Experimental Methodsmentioning

confidence: 99%

Plasma assisted-MBE of GaN and AlN on graphene buffer layers

Borisenko

Гусев

Каргин

et al. 2019

Jpn. J. Appl. Phys.

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The possibility of using chemical vapor deposition (CVD) graphene as a 2D buffer layer for epitaxial growth of III-nitrides by plasma assisted-MBE on amorphous substrates (SiO 2 prepared by thermal oxidation of Si wafer) was investigated. The comparative study of graphene-coated parts of the wafers and the parts without graphene was carried out by scanning electron microscopy and X-ray diffractometry. It was shown that epitaxial GaN and AlN films with close to 2D surface morphology can be obtained by plasma assisted-MBE on amorphous SiO 2 substrates with a multilayer graphene buffer using the HT AlN nucleation layer.

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Section: Experimental Methodsmentioning

confidence: 99%

Plasma assisted-MBE of GaN and AlN on graphene buffer layers

Borisenko

Гусев

Каргин

et al. 2019

Jpn. J. Appl. Phys.

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“…Moreover, the MBE growth takes place at lower substrate temperatures compared with other growth techniques for the same material. For example, the substrate temperature for growing AlGaN thin films by MBE is generally below 800 C, [88][89][90][91][92] whereas by MOCVD it requires 1000-1200 C. [24,34,[93][94][95] Lastly, the MBE growth chamber is equipped with RHEED, which allows an in situ monitoring of the growth and an instantaneous adjustment on the growth parameters, beneficial to the growth of ultrathin layers, e.g., the monolayer (ML)-thick GaN QWs. [96][97][98] In the next two subsections, we will show that benefited from these merits, high-quality AlGaN alloys including both thin films and nanowires can be grown by MBE, which provides a promising path to the electrically injected AlGaN DUV lasers by MBE.…”

Section: A Brief History and Main Features Of Mbementioning

confidence: 99%

Recent Progress on Aluminum Gallium Nitride Deep Ultraviolet Lasers by Molecular Beam Epitaxy

Zhang

Yin

Zhao

2021

Physica Rapid Research Ltrs

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Over the past decades, the aluminum gallium nitride (AlGaN) alloy system has received wide interest for the development of semiconductor deep ultraviolet (DUV) lasers due to its direct, tunable, and ultrawide bandgap energies (3.4-6.2 eV). The progress, nonetheless, has been remained slow, which is ascribed to a few major challenges, including large dislocation and defect densities, difficulty in obtaining p-type high-Al-content AlGaN layers with a sufficient p-type conduction, the large electric polarization fields, and the unfavorable optical polarization. In recent years, with AlGaN alloys grown by molecular beam epitaxy (MBE), including both thin films and nanowire structures, remarkable advancements have been made, such as highly conductive p-type high-Al-content AlGaN epilayers with resistivities as low as 0.7 Ω cm and DUV lasing down to 239 nm with nanowire structures under a direct current injection. Herein, the recent progress on the DUV lasers by the MBE-grown AlGaN is reviewed. The challenges and prospects of the MBE-grown AlGaN for DUV lasers are also discussed.

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“…3(a). After the nucleation layer, a 740-nmthick AlN layer was grown in metal-modulated epitaxy (MME) mode 31) followed by a 320-nm-thick AlN layer grown under continuous slightly metal-rich conditions at the same temperature. During growth of the MME layer the N 2 plasma flow was kept constant whereas the Al flow was periodically switched off (2 min turn-on period, 0.5 min turn-off period) to prevent formation of Al droplets.…”

Section: Plasma-assisted Mbe Growth Of the Aln Layermentioning

confidence: 99%

AlGaN/GaN high electron mobility transistor heterostructures grown by ammonia and combined plasma-assisted ammonia molecular beam epitaxy

Alyamani

Луценко²,

Rzheutski³

et al. 2019

Jpn. J. Appl. Phys.

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The structural properties and surface morphology of AlN epitaxial layers grown by ammonia (NH3) and plasma-assisted (PA) molecular beam epitaxy (MBE) at different growth conditions on (0001) sapphire were investigated. The lowest RMS roughness of ∼0.7 nm was achieved for the sample grown by NH3 MBE at a substrate temperature of 1085 °C and NH3 flow of 100 standard cm3 min−1. Atomic force microscopy measurements demonstrated a terrace-monolayer step-like surface morphology. Furthermore, the optimal substrate temperature for growth of GaN and AlGaN layers was determined from analysis of the GaN thermal decomposition rate. Using the optimized growth conditions, high electron mobility transistor heterostructures were grown by NH3 MBE on different types of AlN nucleation layer deposited by NH3 MBE or PA MBE. The grown heterostructures demonstrated comparable two-dimensional electron gas (2DEG) properties. The maximum 2DEG mobility of ∼2000 cm2 V–1 s–1) at a 2DEG density of ∼1.17 × 1013 cm−2 was achieved for the heterostructure with a PA MBE-grown AlN nucleation layer. The obtained results demonstrate the possibility of successful combination of different epitaxial approaches within a single growth process, which will contribute to the development of a new type of hybrid epitaxy that exploits the advantages of several technologies.

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Pulsed growth techniques in plasma-assisted molecular beam epitaxy of Al Ga1−N layers with medium Al content (x=0.4–0.6)

Cited by 15 publications

References 16 publications

Plasma assisted-MBE of GaN and AlN on graphene buffer layers

Plasma assisted-MBE of GaN and AlN on graphene buffer layers

Recent Progress on Aluminum Gallium Nitride Deep Ultraviolet Lasers by Molecular Beam Epitaxy

AlGaN/GaN high electron mobility transistor heterostructures grown by ammonia and combined plasma-assisted ammonia molecular beam epitaxy

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