Pulsed electrodeposition and characterization of molybdenum diselenide thin film

Structural, optical and microscopic studies of tungsten substituted molybdenum diselenide thin films

“…The values were found to be between 0.683 and 0.990 eV at high temperature and 0.005 and 0.064 eV low temperatures. The values are in well agreement with earlier reported values for MoSe 2 and WSe 2 thin films [24][25][26][27].…”

Characterization of MoSe2 thin film deposited at room temperature from solution phase

“…The dark electrical conductivity of 'as-deposited' MoSe 2 film of non-conducting glass slide was determined using a 'dc' twoprobe method, in the temperature range 300-500 K. At room temperature the specific conductance was found to be in the order of 10 À2 (O cm) À1 , which is higher than earlier reported value [23]. The values of specific conductance at 300 and 500 K are reported in Table 2.…”

Effect of substrate temperature on the electrical characteristics of MoSe thin films and back-gated MoSe transistors

“…Therefore, it is significant to study the electrical properties of MoSe 2 . Up to now, many preparatory techniques have been used to obtain the MoSe 2 films, such as chemical vapor deposition (CVD), sputtering and electrodeposition and chemical bath deposition (CBD) [4][5][6][7][8]. The radio frequency (RF) magnetron sputtering method is emerged as an important method due to the high deposition rate, large area deposition and good physical and chemical properties of the films.…”

“…The radio frequency (RF) magnetron sputtering method is emerged as an important method due to the high deposition rate, large area deposition and good physical and chemical properties of the films. So far, researchers have mainly studied the electrical properties of stoichiometric MoSe 2 thin films [5][6][7][8]. However, these films are polycrystalline and the grain boundaries maximize the trap and/ or scattering of the charge carriers, resulting in the reduction the mobility [9].…”