Pulsed and Pulsed Bias Sputtering

Barnat, Edward V.; Lu, Toh-Ming

doi:10.1007/978-1-4615-0411-5

Cited by 14 publications

(7 citation statements)

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“…The deposition rate showed the highest value of 26 nm/min when the pulse frequency of 10 kHz was applied to a target and it decreased linearly as the pulse frequency increased. Generally, it was reported that the deposition rate was independent of pulse frequency when pulsed DC magnetron sputtering is used for thin film deposition [19,20]. However, we found that the pulse frequency significantly influenced the deposition rate of AZO films.…”

Section: Resultscontrasting

confidence: 71%

“…This is the reason why the resistivity of AZO films decreases with the increase of pulse frequency till 30 kHz. However, it could be assumed that the resistivity increased slightly at a pulse frequency higher than 30 kHz because the defect density on the film surface increased due to the increased kinetic energy of sputtered particles [20]. mechanisms of the films are to be expressed as follows [2]:…”

Section: Resultsmentioning

confidence: 99%

“…The correct selection of pulse parameters such as frequency, duty and reverse voltage can result in extended arc-free operating conditions, and expect to the improvement of structural and optical properties of AZO films. It also has advantages of low cost and low-temperature deposition compared to MOCVD and PLD processes [16][17][18][19][20].…”

Section: Introductionmentioning

confidence: 99%

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Growth of Al-doped ZnO thin films by pulsed DC magnetron sputtering

Tai

Kim

et al. 2005

Journal of Crystal Growth

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Section: Resultscontrasting

confidence: 71%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Growth of Al-doped ZnO thin films by pulsed DC magnetron sputtering

Tai

Kim

et al. 2005

Journal of Crystal Growth

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“…The alternation (switching) of polarity is typically done in the mid-frequency range [20]. In our system, two reactive gases (oxygen, nitrogen) are used which leads to some non-trivial modification of the reactive deposition process [21].…”

Section: Introductionmentioning

confidence: 99%

Structural, optical, and electrical properties of WOx(Ny) films deposited by reactive dual magnetron sputtering

Mohamed

Anders

2006

Surface and Coatings Technology

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Thin films of tungsten oxynitrides were prepared by dual magnetron sputtering of tungsten using argon/oxygen/nitrogen gas mixtures with various nitrogen/oxygen ratios.The presence of even relatively small amounts of oxygen led to close-to-stoichiometric WO 3 , with little incorporation of nitrogen, therefore the films were labeled as WO x (N y ). Oxygen had a great effect not only on the composition but on the structure of WO x (N y ) films, as shown by Rutherford backscattering and x-ray diffraction, respectively. Significant incorporation of nitrogen occurred only when the nitrogen partial pressure exceeded 89% of the total reactive gas pressure. Sharp changes in the stoichiometry, deposition rate, room temperature resistivity, electrical activation energy and optical band gap were observed when the nitrogen/oxygen ratio was high. The deposition rate increased from 0.31 to 0.89 nm/s, LBNL-59900 1 the room temperature resistivity decreased from 1.65 × 10 8 to 1.82 × 10 -2 Ωcm, the electrical activation energy decreased from 0.97 to 0.067 eV, and the optical band gap decreased from 3.19 to 2.94 eV upon nitrogen incorporation into the films. WO x (N y ) films were highly transparent as long as the nitrogen incorporation was low, and were brownish (absorbing) and partially reflecting as nitrogen incorporation became significant.

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“…16,17 According to Berg's theoretical model for reactive sputtering, 16,17 the cathode current hysteresis during sputtering depends on a number of factors, including reactive gas consumption rates, pumping speed, difference in the sputtering yield of the target material in the elemental and compound zones, target area, target-to-substrate distance, etc. 24,25 In this work, the influence of the hysteresis effect on the properties of pulsed dc sputtered VO x films has been systematically investigated. Additionally, in the case of VO x , the existence of multiple valance states of vanadium results in the close proximity of several Magneli and crystalline phases 18-20 on the VO x phase diagram, making the deposition process even more challenging.…”

Section: Introductionmentioning

confidence: 99%

Process-structure-property correlations in pulsed dc reactive magnetron sputtered vanadium oxide thin films

Venkatasubramanian

Cabarcos

Drawl

et al. 2011

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Articles you may be interested inPotential for reactive pulsed-dc magnetron sputtering of nanocomposite VOx microbolometer thin films J. Vac. Sci. Technol. A 32, 061501 (2014); 10.1116/1.4894268 Microstructural evolution of thin film vanadium oxide prepared by pulsed-direct current magnetron sputtering J. Appl. Phys. 112, 093504 (2012); 10.1063/1.4759255Enhanced electrical and noise properties of nanocomposite vanadium oxide thin films by reactive pulsed-dc magnetron sputtering Electrical and optical properties of sputtered amorphous vanadium oxide thin filmsCathode hysteresis in the reactive pulsed dc sputtering of a vanadium metal target was investigated to correlate the structural and electrical properties of the resultant vanadium oxide thin films within the framework of Berg's model [Berg et al., J. Vac. Sci. Technol. A 5, 202 (1987)]. The process hysteresis during reactive pulsed dc sputtering of a vanadium metal target was monitored by measuring the cathode (target) current under different total gas flow rates and oxygen-to-argon ratios for a power density of $6.6.W/cm 2 . Approximately 20%-25% hysteretic change in the cathode current was noticed between the metallic and oxidized states of the V-metal target. The extent of the hysteresis varied with changes in the mass flow of oxygen as predicted by Berg's model. The corresponding microstructure of the films changed from columnar to equiaxed grain structure with increased oxygen flow rates. Micro-Raman spectroscopy indicates subtle changes in the film structure as a function of processing conditions. The resistivity, temperature coefficient of resistance, and charge transport mechanism, obeying the Meyer-Neldel relation [Meyer and Neldel, Z. Tech. Phys. (Leipzig) 12, 588 (1937)], were correlated with the cathode current hysteric behavior.

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Pulsed and Pulsed Bias Sputtering

Cited by 14 publications

References 0 publications

Growth of Al-doped ZnO thin films by pulsed DC magnetron sputtering

Growth of Al-doped ZnO thin films by pulsed DC magnetron sputtering

Structural, optical, and electrical properties of WOx(Ny) films deposited by reactive dual magnetron sputtering

Process-structure-property correlations in pulsed dc reactive magnetron sputtered vanadium oxide thin films

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